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公开(公告)号：EP0562871B1
公开(公告)日：1997-11-12
申请号：EP93302354.1
申请日：1993-03-26
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公开(公告)号：EP0562871A1
公开(公告)日：1993-09-29
申请号：EP93302354.1
申请日：1993-03-26
发明人： Bergman, Rolf Sverre , Price, Gary Lynn , Scott, Curtis Edward , Olwert, Ronald James , Ahigren, Frederick Francis , Walsh, LaVerne E. , Schindler, Donald Roy
摘要： An incandescent lamp (54) containing a coiled filament (28) within a vitreous envelope wherein the filament is supported at at least one point along its coil length by a refractory metal support wire (10) one end of which is welded to a coil (28) and the other end secured to the envelope wall by a glass bead (24). The support prevents filament sag during lamp operation and is especially useful with double-ended high intensity tungsten-halogen lamps having an elliptically shaped filament chamber with an infrared reflecting and visible light transmitting optical interference coating on the chamber.
摘要翻译： 一种白炽灯（54），其包含在玻璃体外壳内的螺旋丝（28），其中所述细丝通过难熔金属支撑线（10）在其线圈长度的至少一个点处被支撑，其一端焊接到线圈 28），另一端通过玻璃珠（24）固定到信封壁。 该支撑件防止灯操作期间的灯丝松弛，并且对于具有椭圆形灯丝室的双端高强度卤钨灯特别有用，该室具有在室上的红外反射和可见光透射光学干涉涂层。
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3.发明公开A process and apparatus for forming multi-layer optical films 失效Verfahren und Vorrichtung zur Bildung von mehrlagigen optischen Beschichtungen
公开(公告)号：EP0691419A1
公开(公告)日：1996-01-10
申请号：EP95303594.6
申请日：1995-05-26
发明人： Sproul, William D. , Parham, Thomas Gene , Maxwell, Randolph E. , Graham, Michael Evans , Bergman, Rolf Sverre
CPC分类号： H01J9/20 , C23C14/0021 , C23C14/352
摘要： A process for forming multi-layer optical quality films by sputtering at least a first and second material with at least two unbalanced DC magnetron sputtering devices. During sputtering, an effective negative radio frequency or alternating current bias is applied to the substrate and an arc suppression device is operated to reduce arcing on the sputtering devices. In addition, a controlled partial pressure of a reactive gas is maintained in the sputtering chamber to provide a sufficient amount of reactive gas to form the desired compound on the substrate without substantially poisoning the target.
摘要翻译： 通过用至少两个不平衡DC磁控溅射装置至少溅射第一和第二材料来形成多层光学质量膜的方法。 在溅射期间，将有效的负射频或交流偏压施加到衬底，并且操作消弧装置以减少溅射装置上的电弧。 此外，在溅射室中保持反应气体的受控分压，以提供足够量的反应气体，以在基板上形成所需化合物，而基本上不会中毒靶。
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公开(公告)号：EP0420547A3
公开(公告)日：1991-08-14
申请号：EP90310425.5
申请日：1990-09-24
IPC分类号： H01K1/50
摘要： A tungsten-halogen lamp (10) operating at temperatures above 250°C which contain a mixture of phosphine, hydrogen, bromine and inert gas have been found to have superior life and lumen maintenance when the atomic ratio of phosphorus to bromine in the lamp is in the range of from 0.4-2.5.
摘要翻译： 已经发现在含有磷化氢，氢气，溴和惰性气体的混合物的250℃以上的温度下操作的卤钨灯（10）在灯中磷与溴的原子比为 在0.4-2.5的范围内。
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公开(公告)号：EP0420547A2
公开(公告)日：1991-04-03
申请号：EP90310425.5
申请日：1990-09-24
IPC分类号： H01K1/50
摘要： A tungsten-halogen lamp (10) operating at temperatures above 250°C which contain a mixture of phosphine, hydrogen, bromine and inert gas have been found to have superior life and lumen maintenance when the atomic ratio of phosphorus to bromine in the lamp is in the range of from 0.4-2.5.
摘要翻译： 已经发现，当灯具中的磷与溴的原子比为（...）时，发现在含有膦，氢，溴和惰性气体的混合物的250℃以上的温度下操作的卤钨灯（10）具有优异的寿命和流明维持率 在0.4-2.5的范围内。
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公开(公告)号：EP0840359A3
公开(公告)日：2002-04-03
申请号：EP97308821.4
申请日：1997-11-04
发明人： Ghezzo, Mario , Bergman, Rolf Sverre , Page, Timothy Dietrich , Vakil, Himanshu Bachubhai , Gorczyca, Thomas Bert , Huey, Charles Samuel , Silverstein, Seth David
CPC分类号： H01L21/67115
摘要： A thermal processor for at least one semiconductor wafer includes a reactor chamber (12) having a material substantially transparent to light including a wavelength within the range of about 200 nanometers to about 800 nanometers for holding the at least one semiconductor wafer. A coating (16) including a material substantially reflective of infrared radiation can be present on at least a portion of the reactor chamber. A light source (18) provides radiant energy to the at least one semiconductor wafer through the coating and the reactor chamber. The light source can include an ultraviolet discharge lamp, a halogen infrared incandescent lamp, or a metal halide visible discharge lamp. The coating can be situated on an inner or outer surface of the reactor chamber. If the reactor chamber has inner and outer walls, the coating can be situated on either the inner wall or the outer wall.
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公开(公告)号：EP0397422A2
公开(公告)日：1990-11-14
申请号：EP90304892.4
申请日：1990-05-04
IPC分类号： H01K1/24
CPC分类号： H01K1/24
摘要： The support or spud (10) is of refractory metal wire in the shape of a ring (12) with a loop (14, 16) on each side. It radially aligns and provides electricity to a filament (24) in eg. a double ended tungsten halogen lamp. The spud has a leg (18, 20) extending from the end of each loop, one (20) of which is attached to the filament and the other (15) forming part of an inlead assembly. This spud is particularly useful with relatively small size double ended tungsten-halogen lamps having an infrared reflecting coating on the surface of the vitreous filament chamber.
摘要翻译： 支撑件或支脚（10）是具有在每一侧上具有环（14,16）的环（12）形状的难熔金属线。 其径向对准并向例如电线（24）提供电力。 双端钨卤灯。 立柱具有从每个环的端部延伸的腿部（18,20），其中一个（20）连接到灯丝，而另一个（15）形成一个入口组件的一部分。 对于具有在玻璃纤维室的表面上的红外反射涂层的相对小尺寸的双端钨卤素灯，该标准特别有用。
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9.发明公开Thermal processor for semiconductor wafers 失效Anlage zur thermischen Behandlung von Halbleiterscheiben
公开(公告)号：EP0840359A2
公开(公告)日：1998-05-06
申请号：EP97308821.4
申请日：1997-11-04
发明人： Ghezzo, Mario , Bergman, Rolf Sverre , Page, Timothy Dietrich , Vakil, Himanshu Bachubhai , Gorczyca, Thomas Bert , Huey, Charles Samuel , Silverstein, Seth David
IPC分类号： H01L21/00
CPC分类号： H01L21/67115
摘要： A thermal processor for at least one semiconductor wafer includes a reactor chamber (12) having a material substantially transparent to light including a wavelength within the range of about 200 nanometers to about 800 nanometers for holding the at least one semiconductor wafer. A coating (16) including a material substantially reflective of infrared radiation can be present on at least a portion of the reactor chamber. A light source (18) provides radiant energy to the at least one semiconductor wafer through the coating and the reactor chamber. The light source can include an ultraviolet discharge lamp, a halogen infrared incandescent lamp, or a metal halide visible discharge lamp. The coating can be situated on an inner or outer surface of the reactor chamber. If the reactor chamber has inner and outer walls, the coating can be situated on either the inner wall or the outer wall.
摘要翻译： 用于至少一个半导体晶片的热处理器包括反应室（12），其具有对包含波长在约200纳米至约800纳米范围内的光基本上透明的材料，用于保持所述至少一个半导体晶片。 包含基本上反射红外辐射的材料的涂层（16）可以存在于反应器室的至少一部分上。 光源（18）通过涂层和反应器室向至少一个半导体晶片提供辐射能。 光源可以包括紫外线放电灯，卤素红外线白炽灯或金属卤化物可见放电灯。 涂层可以位于反应器室的内表面或外表面上。 如果反应器室具有内壁和外壁，则涂层可以位于内壁或外壁上。
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公开(公告)号：EP0578414A1
公开(公告)日：1994-01-12
申请号：EP93305011.4
申请日：1993-06-28
IPC分类号： H01J61/52
CPC分类号： H01J61/363 , H01J61/0737 , H01J61/24 , H01J61/302 , H01J61/34 , H01J61/523 , H01J61/825
摘要： An alkali metal vapor arc discharge lamp which operates on DC and employs an amalgam of mercury and an alkali metal such as sodium, has a cathode to anode pressure ratio no greater than 5 and a cathode end temperature at least 50°C hotter than the anode end temperature to prevent cataphoretic separation of the mercury and alkali metal in the arc discharge during operation of the lamp. The lamp is designed to have a cataphoretic driving parameter (CDP) value of less than 150. The CDP is defined as the product of the arc current in amperes, times the arc gap length in centimeters, divided by square of the inner diameter of the arc tube in centimeters.
摘要翻译： 在DC上工作并使用汞和碱金属如钠的碱金属蒸汽放电灯具有不大于5的阴极至阳极压力比，并且阴极端温度比阳极高至少50℃ 以防止在灯的操作期间电弧放电中的汞和碱金属的阴天分离。 该灯被设计成具有小于150的弹射驱动参数（CDP）值.CDP被定义为以安培为单位的电弧电流乘以电弧间隙长度（以厘米为单位）的乘积除以 电弧管以厘米为单位。
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