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1.发明公开Method for reducing defect concentrations in crystals 有权克里斯塔伦（Ver。）的维克多伦（Verminderung von Defektkonzentrationen）
公开(公告)号：EP1715086A1
公开(公告)日：2006-10-25
申请号：EP06013705.6
申请日：2003-06-25
发明人： D'Evelyn, Mark Philip , Arthur, Stephen Daley , Rowland, Larry Burton , Vagaralli, Suresh Shankarappa , Lucek, John William , Anthony, Thomas Richard , Levinson, Lionel Monty
IPC分类号： C30B33/00
CPC分类号： B01J3/062 , B01J3/065 , B01J2203/0635 , B01J2203/0645 , B01J2203/066 , B01J2203/0665 , B01J2203/067 , B01J2203/0675 , B01J2203/069 , C30B33/00
摘要： A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.
摘要翻译： 通过提供含有缺陷的晶体和压力介质，开始在高压高温（HP / HT）下除去非金刚石晶体中的缺陷或解除应变的方法。 将晶体和压力介质设置在高压电池中并放置在高压装置中，用于在足够高的压力和高温的反应条件下进行处理足以在一次或多次去除缺陷或减轻单一应变中的应变的时间 水晶。
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公开(公告)号：EP1715086B1
公开(公告)日：2012-03-14
申请号：EP06013705.6
申请日：2003-06-25
发明人： D'Evelyn, Mark Philip , Arthur, Stephen Daley , Rowland, Larry Burton , Vagaralli, Suresh Shankarappa , Lucek, John William , Anthony, Thomas Richard , Levinson, Lionel Monty
IPC分类号： C30B33/00
CPC分类号： B01J3/062 , B01J3/065 , B01J2203/0635 , B01J2203/0645 , B01J2203/066 , B01J2203/0665 , B01J2203/067 , B01J2203/0675 , B01J2203/069 , C30B33/00
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公开(公告)号：EP1378591A1
公开(公告)日：2004-01-07
申请号：EP03254007.2
申请日：2003-06-25
发明人： D'Evelyn, Mark Philip , Rowland, Larry Burton , Lucek, John William , Vagaralli, Suresh Shankarappa , Anthony, Thomas Richard , Levinson, Lionel Monty , Arthur, Stephen Daley
CPC分类号： B01J3/065 , B01J3/062 , B01J2203/0635 , B01J2203/0645 , B01J2203/066 , B01J2203/0665 , B01J2203/067 , B01J2203/0675 , B01J2203/069 , C30B33/00 , Y10T117/1004 , Y10T117/1008
摘要： A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.
摘要翻译： 通过提供含有缺陷的晶体和压力介质，开始在高压高温（HP / HT）下除去非金刚石晶体中的缺陷或解除应变的方法。 将晶体和压力介质设置在高压电池中并放置在高压装置中，用于在足够高的压力和高温的反应条件下进行处理足以在一次或多次去除缺陷或减轻单一应变中的应变的时间 水晶。
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