利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

26 条记录 (耗时 0.014 秒)

    An oled fiber light source
    1.
    发明公开
    An oled fiber light source 审中-公开
    Lichtquelle bestehend aus einem OLED faser

    公开(公告)号：EP1180805A2

    公开(公告)日：2002-02-20

    申请号：EP01306652.7

    申请日：2001-08-03

    申请人： GENERAL ELECTRIC COMPANY

    发明人： Duggal, Anil Raj ,  Levinson, Lionel Monty

    IPC分类号： H01L51/20 ,  F21V8/00

    CPC分类号： G02B6/0001 ,  C23C18/1651 ,  C23C18/1653 ,  C25D7/0607 ,  H01L51/5287

    摘要： A flexible organic light emitting diode (OLED) fiber light source is provided. The OLED contains a fiber core, a cathode, at least one organic radiation emitting layer and a transparent anode. The fiber light source may be used as a flexible novelty lighting article or coiled inside a large area lighting source.

    摘要翻译： 提供了柔性有机发光二极管（OLED）光纤光源。 OLED包含纤维芯，阴极，至少一个有机辐射发射层和透明阳极。 光纤光源可以用作灵活的新颖照明物品或卷绕在大面积照明源内。

    Current limiting device
    3.
    发明公开
    Current limiting device 失效

    公开(公告)号：EP0762439A3

    公开(公告)日：1998-01-14

    申请号：EP96304363.3

    申请日：1996-06-11

    申请人： GENERAL ELECTRIC COMPANY

    发明人： Duggal, Anil Raj ,  Patchen, Harold Jay ,  Levinson, Lionel Monty ,  Lewis, Larry Neil

    IPC分类号： H01C7/12

    摘要： A current limiting device utilizing an electrically conductive composite material and an inhomogeneous distribution of resistance structure is disclosed. The inhomogeneous distribution is typically chosen so that at least one selected thin layer of the current limiting device has much higher resistance than the rest of the current limiting device. In the actual device, pressure (P) is exerted on the composite material in a direction normal to the selected thin layer. During a short-circuit, it is believed that adiabatic resistive heating of this selected thin layer is followed by rapid thermal expansion which leads to either a partial or complete physical separation of the current limiting device at the selected thin layer which produces a higher over-all device resistance to electric current flow. Thus the current limiting device limits the flow of current through the short-circuited current path. When the short-circuit is cleared, the current limiting device regains its low resistance state allowing electrical current to flow normally. The current limiting of the present invention is reusable for many such short circuit conditions.

    Conversion of doped polycrystalline material to single crystal material
    7.
    发明授权
    Conversion of doped polycrystalline material to single crystal material 失效
    掺杂多晶材料转化成单晶

    公开(公告)号：EP0667404B1

    公开(公告)日：1998-06-03

    申请号：EP95300260.7

    申请日：1995-01-17

    申请人： GENERAL ELECTRIC COMPANY

    发明人： Scott, Curtis Edward ,  Kaliszewski, Mary Sue ,  Levinson, Lionel Monty

    IPC分类号： C30B29/20 ,  C30B1/00

    CPC分类号： C30B1/00 ,  C30B29/20

    摘要： A solid state method of converting a polycrystalline ceramic body to a single crystal body includes the steps of doping the polycrystalline ceramic material with a conversion-enhancing dopant and then heating the polycrystalline body at a selected temperature for a selected time sufficient to convert the polycrystalline body to a single crystal. The selected temperature is less than the melting temperature of the polycrystalline material and greater than about one-half the melting temperature of the material. In the conversion of polycrystalline alumina to single crystal alumina (sapphire), examples of conversion-enhancing dopants include cations having a +3 valence, such as chromium, gallium, and titanium. The polycrystalline body further can be inhomogeneously doped to form a first portion of the polycrystalline body that is doped to the selected level of the conversion-enhancing dopant and a second portion that is not doped such that heating the doped polycrystalline body causes conversion of first portion to a single crystal structure and the second portion retains a polycrystalline structure.

    Solid state thermal conversion of polycrystalline alumina to sapphire using a seed crystal
    9.
    发明授权
    Solid state thermal conversion of polycrystalline alumina to sapphire using a seed crystal 失效
    多晶氧化铝的热转化，使用的晶种以固态蓝宝石

    公开(公告)号：EP0645475B1

    公开(公告)日：2001-11-07

    申请号：EP94306284.4

    申请日：1994-08-25

    申请人： GENERAL ELECTRIC COMPANY

    发明人： Scott, Curtis Edward ,  Strok, Jack Mack ,  Levinson, Lionel Monty

    IPC分类号： C30B1/10 ,  C30B29/20 ,  C30B1/02

    CPC分类号： C30B1/02 ,  C30B29/20

    摘要： A solid state seed crystal process for bulk conversion of a polycrystalline ceramic body to a single crystal body (of the same chemical composition) having the same crystal orientation as the seed crystal. The process comprises heating said body to form a monolithic join between the body and the seed crystal, heating the joined structure to reduce grain growth inhibitors and further heating the joined structure above the minimum temperature required for crystallite growth of the crystalline material, but not hot enough to melt and distort the original shape of the polycrystalline ceramic body during its conversion to a single crystal. This process has been used to convert polycrystalline alumina (PCA) bodies to sapphire having the same crystal orientation as the seed crystal by heating the PCA body, monolithically joined to a sapphire seed crystal, at a temperature above 1700 DEG C without melting the body.