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1.发明公开Method for reducing defect concentrations in crystals 有权克里斯塔伦（Ver。）的维克多伦（Verminderung von Defektkonzentrationen）
公开(公告)号：EP1715086A1
公开(公告)日：2006-10-25
申请号：EP06013705.6
申请日：2003-06-25
发明人： D'Evelyn, Mark Philip , Arthur, Stephen Daley , Rowland, Larry Burton , Vagaralli, Suresh Shankarappa , Lucek, John William , Anthony, Thomas Richard , Levinson, Lionel Monty
IPC分类号： C30B33/00
CPC分类号： B01J3/062 , B01J3/065 , B01J2203/0635 , B01J2203/0645 , B01J2203/066 , B01J2203/0665 , B01J2203/067 , B01J2203/0675 , B01J2203/069 , C30B33/00
摘要： A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.
摘要翻译： 通过提供含有缺陷的晶体和压力介质，开始在高压高温（HP / HT）下除去非金刚石晶体中的缺陷或解除应变的方法。 将晶体和压力介质设置在高压电池中并放置在高压装置中，用于在足够高的压力和高温的反应条件下进行处理足以在一次或多次去除缺陷或减轻单一应变中的应变的时间 水晶。
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公开(公告)号：EP1901584A3
公开(公告)日：2008-09-10
申请号：EP06024819.2
申请日：2006-11-30
发明人： Giddings, Robert Arthur , D'Evelyn, Mark Philip , Dey, Subhrajit , Badding, Bruce John , Zeng, Larry Qiang
IPC分类号： H05B3/42
摘要： A heater that may include an outer housing and an inner tube is provided. The inner tube is in a coaxial relation to and within the outer housing. An inward facing surface of the inner tube defines a volume sufficient to receive a reaction capsule, and the outward facing surface is radially spaced from an inward facing surface of the outer housing sufficient to define a gap. A filler material is disposed within the gap. The filler material responds to pressure such that the filler volume is reduced by less than 5 volume percent at greater than 500 MPa pressure and at greater than 500°C temperature. One or more heating elements are disposed in the gap. The heating elements are in thermal communication with the inner tube.
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3.发明公开System and method for producing solar grade silicon 审中-公开系统和Verfahren zur Herstellung von Solargradsilicium
公开(公告)号：EP2036855A2
公开(公告)日：2009-03-18
申请号：EP08163229.1
申请日：2008-08-29
IPC分类号： C01B33/025 , H02K7/00
CPC分类号： C01B33/025 , F27D17/004 , H01L31/1804 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A starting material including silica and carbon is heated to form an intermediate material. The intermediate material includes silica and silicon carbide. The intermediate material is reacted to form silicon. At least some of the emissions that are generated by heating the starting material and reacting the intermediate material are collected and used to generate electric power.
摘要翻译： 将包括二氧化硅和碳的起始材料加热以形成中间材料。 中间材料包括二氧化硅和碳化硅。 中间材料反应形成硅。 通过加热起始材料和使中间材料反应产生的至少一些排放被收集并用于产生电力。
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公开(公告)号：EP1901584A2
公开(公告)日：2008-03-19
申请号：EP06024819.2
申请日：2006-11-30
发明人： Giddings, Robert Arthur , D'Evelyn, Mark Philip , Dey, Subhrajit , Badding, Bruce John , Zeng, Larry Qiang
IPC分类号： H05B3/42
摘要： A heater that may include an outer housing and an inner tube is provided. The inner tube is in a coaxial relation to and within the outer housing. An inward facing surface of the inner tube defines a volume sufficient to receive a reaction capsule, and the outward facing surface is radially spaced from an inward facing surface of the outer housing sufficient to define a gap. A filler material is disposed within the gap. The filler material responds to pressure such that the filler volume is reduced by less than 5 volume percent at greater than 500 MPa pressure and at greater than 500°C temperature. One or more heating elements are disposed in the gap. The heating elements are in thermal communication with the inner tube.
摘要翻译： 提供可以包括外壳和内管的加热器。 内管与外壳同轴并且位于外壳内。 内管的面向内的表面限定了足以容纳反应胶囊的体积，并且面向外的表面与外壳的面向内的表面径向间隔开，足以限定间隙。 填充材料设置在间隙内。 填充材料响应压力，使得在大于500MPa压力和大于500℃温度下，填料体积减少小于5体积％。 一个或多个加热元件设置在间隙中。 加热元件与内管热连通。
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公开(公告)号：EP2036855A3
公开(公告)日：2011-06-29
申请号：EP08163229.1
申请日：2008-08-29
CPC分类号： C01B33/025 , F27D17/004 , H01L31/1804 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A starting material including silica and carbon is heated to form an intermediate material. The intermediate material includes silica and silicon carbide. The intermediate material is reacted to form silicon. At least some of the emissions that are generated by heating the starting material and reacting the intermediate material are collected and used to generate electric power.
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公开(公告)号：EP1715086B1
公开(公告)日：2012-03-14
申请号：EP06013705.6
申请日：2003-06-25
发明人： D'Evelyn, Mark Philip , Arthur, Stephen Daley , Rowland, Larry Burton , Vagaralli, Suresh Shankarappa , Lucek, John William , Anthony, Thomas Richard , Levinson, Lionel Monty
IPC分类号： C30B33/00
CPC分类号： B01J3/062 , B01J3/065 , B01J2203/0635 , B01J2203/0645 , B01J2203/066 , B01J2203/0665 , B01J2203/067 , B01J2203/0675 , B01J2203/069 , C30B33/00
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公开(公告)号：EP1378591A1
公开(公告)日：2004-01-07
申请号：EP03254007.2
申请日：2003-06-25
发明人： D'Evelyn, Mark Philip , Rowland, Larry Burton , Lucek, John William , Vagaralli, Suresh Shankarappa , Anthony, Thomas Richard , Levinson, Lionel Monty , Arthur, Stephen Daley
CPC分类号： B01J3/065 , B01J3/062 , B01J2203/0635 , B01J2203/0645 , B01J2203/066 , B01J2203/0665 , B01J2203/067 , B01J2203/0675 , B01J2203/069 , C30B33/00 , Y10T117/1004 , Y10T117/1008
摘要： A method for removing defects at high pressure and high temperature (HP/HT) or for relieving strain in a non-diamond crystal commences by providing a crystal, which contains defects, and a pressure medium. The crystal and the pressure medium are disposed in a high pressure cell and placed in a high pressure apparatus, for processing under reaction conditions of sufficiently high pressure and high temperature for a time adequate for one or more of removing defects or relieving strain in the single crystal.
摘要翻译： 通过提供含有缺陷的晶体和压力介质，开始在高压高温（HP / HT）下除去非金刚石晶体中的缺陷或解除应变的方法。 将晶体和压力介质设置在高压电池中并放置在高压装置中，用于在足够高的压力和高温的反应条件下进行处理足以在一次或多次去除缺陷或减轻单一应变中的应变的时间 水晶。
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8.发明授权
公开(公告)号：EP1008553B1
公开(公告)日：2003-04-16
申请号：EP99308733.7
申请日：1999-11-03
CPC分类号： C23C14/5846 , C23C14/024 , C23C16/0272 , C23C16/56 , Y10T428/24802 , Y10T428/24826 , Y10T428/24917 , Y10T428/24975 , Y10T428/265 , Y10T428/30 , Y10T428/31678
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