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    METHOD FOR COATING A SUBSTRATE AND COATED PRODUCT
    1.
    发明公开
    METHOD FOR COATING A SUBSTRATE AND COATED PRODUCT 无效
    方法用于涂覆基材和涂布产品

    公开(公告)号：EP2104753A2

    公开(公告)日：2009-09-30

    申请号：EP07868426.3

    申请日：2007-10-12

    申请人： H.C. Starck GmbH & Co. KG

    发明人： ZIMMERMANN, Stefan ,  MILLER, Steven A. ,  SHEKHTER, Leonid N.

    IPC分类号： C23C24/08

    CPC分类号： C23C24/04 ,  B22F7/08 ,  Y10T428/12493 ,  Y10T428/31678

    摘要： Disclosed is a method of applying coatings to surfaces, wherein a gas flow forms a gas-powder mixture with a powder of a material selected from the group consisting of niobium, tantalum, tungsten, molybdenum, titanium, zirconium, nickel, cobalt, iron, chromium, aluminium, silver, copper, mixtures of at least two thereof or their alloys with at least two thereof or with other metals, the powder has a particle size of from 0.5 to 150 μm, an oxygen content of less than 500 ppm oxygen and a hydrogen content of less than 500 ppm, wherein a supersonic speed is imparted to the gas flow and the jet of supersonic speed is directed onto the surface of an object. The coatings prepared are used, for example, as corrosion protection coatings.

    CERMETPULVER
    3.
    发明公开
    CERMETPULVER 审中-公开

    公开(公告)号：EP2753722A1

    公开(公告)日：2014-07-16

    申请号：EP12756700.6

    申请日：2012-09-04

    申请人： H.C. Starck GmbH

    发明人： ZIMMERMANN, Stefan ,  GRIES, Benno

    IPC分类号： C22C29/06 ,  B22F9/02

    摘要： The present invention relates to cermet powders, to a method for producing a cermet powder and to use of the cermet powders for surface coating and as thermal spraying powder. The invention further relates to a method for producing a coated component, comprising the application of a coating by thermal spraying of the cermet powder, and also to a coated component which is obtainable by the method.

    Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made there from
    5.
    发明公开
    Fine grained, non banded, refractory metal sputtering targets with a uniformly random crystallographic orientation, method for making such film, and thin film based devices and products made there from 审中-公开
    细粒度，而不是条纹具有均匀随机晶体取向基于薄膜器件及其产品耐火金属溅射靶，制造这种层的方法，和

    公开(公告)号：EP2706129A1

    公开(公告)日：2014-03-12

    申请号：EP13184639.6

    申请日：2008-05-02

    申请人： H.C. STARCK, Inc. ,  H.C. Starck GmbH

    发明人： MILLER, Steven ,  KUMAR, Prabhat ,  WU, Richard ,  SUN, Shuwei ,  ZIMMERMANN, Stefan ,  SCHMIDT-PARK, Olaf

    IPC分类号： C23C14/34 ,  H01J35/08 ,  B22F7/00

    CPC分类号： C23C14/3414 ,  B22F1/0014 ,  C22C1/045 ,  C23C4/134 ,  C23C14/0057 ,  C23C14/0089 ,  C23C14/0641 ,  C23C14/08 ,  C23C14/14 ,  C23C24/04 ,  H01J37/3426 ,  H01J2237/332

    摘要： The invention relates to a sputtering target which has a fine uniform equiaxed grain structure of less than 44 microns, no preferred texture orientation as measured by electron back scattered diffraction ("EBSD") and that displays no grain size banding or texture banding throughout the body of the target. The invention relates a sputtering target with a lenticular or flattened grain structure, no preferred texture orientation as measured by EBSD and that displays no grain size or texture banding throughout the body of the target and where the target has a layered structure incorporating a layer of the sputtering material and at least one additional layer at the backing plate interface, said layer has a coefficient of thermal expansion ("CTE") value between the CTE of the backing plate and the CTE of the layer of sputtering material.; The invention also relates to thin films and their use of using the sputtering target and other applications, such as coatings, solar devices, semiconductor devices etc. The invention further relates to a process to repair or rejuvenate a sputtering target.

    摘要翻译： 本发明涉及通过电子背散射衍射（“EBSD”）作为测量并做不显示粒度条带或织构条带在整个主体，其具有小于44微米，不优选的纹理方向精细均匀的等轴晶粒结构的溅射靶 的目标。 本发明涉及具有透镜状的或扁平的晶粒结构，无优选纹理方向的溅射靶通过EBSD作为测量并做不显示晶粒尺寸或织构条带在整个靶的主体，并且其中所述目标具有层状结构包含的一个层 背板的CTE和溅射材料的层的CTE之间的背板接口溅射材料和至少一种另外的层，所述层具有的热膨胀系数（“CTE”）值。 因此，本发明涉及薄膜和它们的使用的溅射靶和其它应用中，颜色的：如涂料，太阳能器件，半导体器件等。本发明进一步涉及一工艺，以修复或重振的溅射靶。

    FINE GRAINED, NON BANDED, REFRACTORY METAL SPUTTERING TARGETS WITH A UNIFORMLY RANDOM CRYSTALLOGRAPHIC ORIENTATION, METHOD FOR MAKING SUCH FILM, AND THIN FILM BASED DEVICES AND PRODUCTS MADE THERE FROM
    7.
    发明公开
    FINE GRAINED, NON BANDED, REFRACTORY METAL SPUTTERING TARGETS WITH A UNIFORMLY RANDOM CRYSTALLOGRAPHIC ORIENTATION, METHOD FOR MAKING SUCH FILM, AND THIN FILM BASED DEVICES AND PRODUCTS MADE THERE FROM 审中-公开
    细晶NICHTZEILIGE难熔金属终端与均匀随机晶体取向，用于生产制作了等薄膜的薄膜和制品基于设备和产品PUTTER

    公开(公告)号：EP2155419A2

    公开(公告)日：2010-02-24

    申请号：EP08755010.9

    申请日：2008-05-02

    申请人： H.C. Starck Inc. ,  H.C. Starck GmbH

    发明人： MILLER, Steven, A. ,  KUMAR, Prabhat ,  WU, Richard ,  SUN, Shuwei ,  ZIMMERMANN, Stefan ,  SCHMIDT-PARK, Olaf

    IPC分类号： B22F1/00 ,  C22C1/04 ,  C23C4/12 ,  C23C14/34

    CPC分类号： C23C14/3414 ,  B22F1/0014 ,  C22C1/045 ,  C23C4/134 ,  C23C14/0057 ,  C23C14/0089 ,  C23C14/0641 ,  C23C14/08 ,  C23C14/14 ,  C23C24/04 ,  H01J37/3426 ,  H01J2237/332

    摘要： The invention relates to a sputtering target which has a fine uniform equiaxed grain structure of less than 44 microns, no preferred texture orientation as measured by electron back scattered diffraction ("EBSD") and that displays no grain size banding or texture banding throughout the body of the target. The invention relates a sputtering target with a lenticular or flattened grain structure, no preferred texture orientation as measured by EBSD and that displays no grain size or texture banding throughout the body of the target and where the target has a layered structure incorporating a layer of the sputtering material and at least one additional layer at the backing plate interface, said layer has a coefficient of thermal expansion ("CTE") value between the CTE of the backing plate and the CTE of the layer of sputtering material.; The invention also relates to thin films and their use of using the sputtering target and other applications, such as coatings, solar devices, semiconductor devices etc. The invention further relates to a process to repair or rejuvenate a sputtering target.

    摘要翻译： 本发明涉及通过电子背散射衍射（“EBSD”）作为测量并做不显示粒度条带或织构条带在整个主体，其具有小于44微米，不优选的纹理方向精细均匀的等轴晶粒结构的溅射靶 的目标。 本发明涉及具有透镜状的或扁平的晶粒结构，无优选纹理方向的溅射靶通过EBSD作为测量并做不显示晶粒尺寸或织构条带在整个靶的主体，并且其中所述目标具有层状结构包含的一个层 背板的CTE和溅射材料的层的CTE之间的背板接口溅射材料和至少一种另外的层，所述层具有的热膨胀系数（“CTE”）值。 因此，本发明涉及薄膜和它们的使用的溅射靶和其它应用中，颜色的：如涂料，太阳能器件，半导体器件等。本发明进一步涉及一工艺，以修复或重振的溅射靶。