公开(公告)号：EP1609558A4

公开(公告)日：2009-07-01

申请号：EP03712673

申请日：2003-03-12

申请人： HAMAMATSU PHOTONICS KK

发明人： FUKUYO FUMITSUGU ,  FUKUMITSU KENSHI ,  UCHIYAMA NAOKI ,  WAKUDA TOSHIMITSU ,  ATSUMI KAZUHIRO ,  MURAMATSU KENICHI

IPC分类号： B23K26/38 ,  B23K26/18 ,  B23K26/42 ,  B28D1/22 ,  B28D5/00 ,  H01L21/301

CPC分类号： B23K26/18 ,  B23K26/0057 ,  B23K26/40 ,  B23K26/60 ,  B23K2201/40 ,  B23K2203/50 ,  B28D1/221 ,  B28D5/0011

摘要： A laser beam machining method capable of accurately cutting a workpiece along predicted cut lines, comprising the steps of forming cut start areas (8) in the workpiece (1) along the predicted cut lines (5) by reformed areas (7) formed by multiple photon absorption, and radiating laser beam (L2) having a permeability for the non-reformed areas of the workpiece (1) onto the workpiece (1) along the predicted cut lines (5) to produce cracks (24) in the workpiece (1) starting at the cut start areas (5), whereby the workpiece (1) can be accurately cut along the predicted cut lines (5) and, since chips (25) are separated from each other by extending an extension film (19) for fixing the workpiece (1) thereto, the certainty of cutting of the workpiece (1) along the predicted cut lines (5) can be further increased.

公开(公告)号：EP1610364A4

公开(公告)日：2008-08-27

申请号：EP03816257

申请日：2003-09-11

申请人： HAMAMATSU PHOTONICS KK

发明人： FUKUMITSU KENSHI ,  FUKUYO FUMITSUGU ,  UCHIYAMA NAOKI

IPC分类号： B23K26/38 ,  B28D1/22 ,  B28D5/00 ,  H01L21/301

CPC分类号： B28D5/0011 ,  B23K26/0057 ,  B23K26/40 ,  B23K2201/40 ,  B23K2203/50 ,  B28D1/221 ,  B28D5/0052 ,  Y10S148/903 ,  Y10T29/49254 ,  Y10T29/53465

摘要： The invention provides a laser beam machining method characterized by comprising the steps of mounting a protective tape (25) on the surface (3) of a wafer (1a), radiating laser light (L) by using the back (21) of a wafer (1a) as a laser light incidence plane with an optical converging point (P) positioned in a substrate (15) to thereby form a melt processing region (13) for melt processing by multiphoton absorption, forming, by means of the melt processing region (13), a cutting start region (8) on the side within a predetermined distance from the laser light incidence plane along a predetermined cutting line (5) on the wafer (1a), mounting an expand tape (23) on the back (21) of the wafer (1a), and stretching the expand tape (23) to thereby separate a plurality of chip-like portions (24) from each other that are formed by the wafer (1a) being cut with the cutting start region (8) used as the starting point.

公开(公告)号：EP1494271A4

公开(公告)日：2006-05-03

申请号：EP03744003

申请日：2003-03-06

申请人： HAMAMATSU PHOTONICS KK

发明人： FUJII YOSHIMARO ,  FUKUYO FUMITSUGU ,  FUKUMITSU KENSHI ,  UCHIYAMA NAOKI

IPC分类号： B23K26/38 ,  H01L21/78 ,  B23K26/40 ,  B23K101/40 ,  H01L21/26 ,  H01L21/30 ,  H01L21/301 ,  H01L21/324 ,  H01L21/42 ,  H01L21/46 ,  H01L21/477 ,  H05K3/00

CPC分类号： H01L21/78 ,  B23K26/0057 ,  B23K26/0622 ,  B23K26/063 ,  B23K26/40 ,  B23K26/4075 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  H01L21/268 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/6836 ,  H01L21/76894 ,  H01L23/544 ,  H01L23/562 ,  H01L2221/68327 ,  H01L2221/68336 ,  H01L2223/5446 ,  H01L2924/00 ,  H01L2924/0002

摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.

摘要翻译： 一种衬底分割方法，其可以在防止碎裂和破裂的同时，对衬底进行薄层化和分割。 该基板分割方法包括以下步骤：将具有形成有功能元件19的正面3的半导体基板1照射在基板内，同时将聚光点定位在基板内，形成包含熔融处理区域的改质区域 在半导体衬底1内的多光子吸收，并且使包括熔融处理区域的改性区域形成切割起点区域; 在形成用于切割的起点区域的步骤之后，研磨半导体衬底1的后表面21，使得半导体衬底1达到预定厚度。

公开(公告)号：EP1609559A4

公开(公告)日：2006-04-26

申请号：EP03712674

申请日：2003-03-12

申请人： HAMAMATSU PHOTONICS KK

发明人： FUKUYO FUMITSUGU ,  FUKUMITSU KENSHI ,  UCHIYAMA NAOKI ,  WAKUDA TOSHIMITSU ,  ATSUMI KAZUHIRO ,  MURAMATSU KENICHI

IPC分类号： B23K26/38 ,  B23K26/06 ,  B23K26/40 ,  B23K26/42 ,  B28D1/22 ,  B28D5/00 ,  C03B33/023 ,  C03B33/09 ,  H01L21/301

CPC分类号： C03B33/091 ,  B23K26/0057 ,  B23K26/0604 ,  B23K26/0624 ,  B23K26/40 ,  B23K26/60 ,  B23K2201/40 ,  B23K2203/50 ,  B28D1/221 ,  B28D5/0011 ,  C03B33/023 ,  Y02P40/57

摘要： A laser processing method which can accurately cut an object to be processed along a line to cut is provided. A modified region 7 formed by multiphoton absorption forms a cutting start region 8 within an object to be processed 1 along a line to cut 5. Thereafter, the object 1 is irradiated with laser light L2 absorbable by the object 1 along the line to cut 5, so as to generate fractures 24 from the cutting start region 8 acting as a start point, whereby the object 1 can accurately be cut along the line to cut 5. Expanding an expandable film 19 having the object 1 secured thereto separates individual chips 25 from each other, which can further improve the reliability in cutting the object 1 along the line to cut 5.

摘要翻译： 提供了一种能够沿着切割线精确切割待处理物体的激光加工方法。 通过多光子吸收形成的改质区域7沿着切割线5在待处理物体1内形成切割开始区域8.此后，对象物1照射被检体1沿着切断线5吸收的激光L2 ，以便从作为起始点的切割起始区域8产生裂缝24，由此可以沿着切割线5精确地切割物体1.扩大具有固定物体1的可膨胀膜19将各个芯片25从 可以进一步提高沿着切割线5切割物体1的可靠性。

公开(公告)号：EP1700666A4

公开(公告)日：2008-12-03

申请号：EP04820181

申请日：2004-12-06

申请人： HAMAMATSU PHOTONICS KK

发明人： KURITA NORIO ,  UCHIYAMA NAOKI

IPC分类号： B23K26/06 ,  B23K26/42 ,  H01S3/00 ,  H01S3/04

CPC分类号： B23K26/043 ,  B23K26/04 ,  B23K26/042 ,  B23K26/703

摘要： A laser processing apparatus which can correct the fluctuation in laser light emitting direction among laser heads is provided. In the laser processing apparatus 1, a laser head 13 is held and cooled by a cooling jacket 11, and thus can be operated stably. Also, even if the emitting direction of laser light L fluctuates when replacing the laser head 13 because of its damage or the like, a regulator 15 can adjusts the position and inclination of the cooling jacket 11 with respect to an optical system main part 4, so that the emitting direction of the laser light L can coincide with the optical axis of the optical system main part 4. Thus, the laser processing apparatus 1 can easily correct the fluctuation in the laser light emitting direction among the laser heads 13.

公开(公告)号：EP1288649A4

公开(公告)日：2006-04-12

申请号：EP01930005

申请日：2001-05-09

申请人： HAMAMATSU PHOTONICS KK

发明人： KAWAI KAZUHITO ,  UCHIYAMA NAOKI ,  MATUI RYOTARO ,  ITO SHINOBU

IPC分类号： G01N21/27 ,  G01N21/31 ,  G01N21/43 ,  G01N21/75 ,  G01N33/44

CPC分类号： G01N21/31 ,  G01N33/44

摘要： The correlation R=I(t)/I(0) between the intensity I(0) of at least one specific wavelenght of monitoring light measured before a resin RSN is cured and the Intensity (t) of the specific wavelenght after the resin RSN is cured is determined. When the variation with time of the correlation R becomes stable, it is judged that the curing of the resin RSN has ended. To produce an assembly, a photocuring resin RSN is interposed between at least two members (M1, M2). When the curing end point is detected, the irradiation of the resin RSN with resin-curing light is stopped, and the assembly is transferred.

公开(公告)号：EP2460633A4

公开(公告)日：2017-09-27

申请号：EP10804295

申请日：2010-07-21

申请人： HAMAMATSU PHOTONICS KK

发明人： UCHIYAMA NAOKI ,  KAWAGUCHI DAISUKE ,  SHIMOI HIDEKI

IPC分类号： B28D5/00 ,  B23K26/00 ,  B23K26/38 ,  C03B33/09 ,  H01L21/301

CPC分类号： B28D5/00 ,  B23K26/0057 ,  B23K26/40 ,  B23K2201/40 ,  B23K2203/50 ,  C03B33/0222 ,  C03B33/07 ,  H01L21/78 ,  Y10T225/12

公开(公告)号：EP2236243A4

公开(公告)日：2013-10-23

申请号：EP08853744

申请日：2008-11-18

申请人： HAMAMATSU PHOTONICS KK

发明人： UCHIYAMA NAOKI

IPC分类号： B23K26/08 ,  B23K26/40 ,  B24B1/00 ,  B24B7/22 ,  H01L21/304

CPC分类号： H01L21/304 ,  B23K26/0057 ,  B23K26/0823 ,  B23K26/0869 ,  B23K26/40 ,  B23K2201/40 ,  B23K2203/50 ,  B24B1/00 ,  B24B7/228

公开(公告)号：EP2460634A4

公开(公告)日：2017-09-27

申请号：EP10804302

申请日：2010-07-21

申请人： HAMAMATSU PHOTONICS KK

发明人： SHIMOI HIDEKI ,  UCHIYAMA NAOKI ,  KAWAGUCHI DAISUKE

IPC分类号： B28D5/00 ,  B23K26/00 ,  B23K26/38 ,  B23K26/40 ,  H01L21/301

CPC分类号： B32B37/06 ,  B23K26/0057 ,  B23K26/40 ,  B23K2201/40 ,  B23K2203/50 ,  B28D5/00 ,  B28D5/0011 ,  B32B38/0004 ,  H01L21/78 ,  Y10T29/49002 ,  Y10T29/49787 ,  Y10T156/1052

公开(公告)号：EP2228167A4

公开(公告)日：2015-08-26

申请号：EP08854973

申请日：2008-11-18

申请人： HAMAMATSU PHOTONICS KK

发明人： UCHIYAMA NAOKI

IPC分类号： B23K26/38 ,  B23K26/40 ,  B23K101/40 ,  H01L21/301

CPC分类号： B23K26/0057 ,  B23K26/0823 ,  B23K26/38 ,  B23K26/40 ,  B23K2201/40 ,  B23K2203/50 ,  H01L21/78