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1.发明公开
公开(公告)号：EP2913377A4
公开(公告)日：2016-08-03
申请号：EP13849146
申请日：2013-09-06
发明人： HONDA YOSHINORI , TAKETOMI HIROYUKI , FUKUYO FUMITSUGU , KAWAI KOJI , TAKAOKA HIDETSUGU , SUZUKI TAKASHI
CPC分类号： H01J63/06 , C09K11/7774 , H01J63/04
摘要： A target for ultraviolet light generation comprises a substrate adapted to transmit ultraviolet light therethrough and a light-emitting layer, disposed on the substrate, for generating ultraviolet light in response to an electron beam. The light-emitting layer includes a powdery or granular oxide crystal containing Lu and Si doped with an activator (e.g., Pr:LPS and Pr:LSO crystals).
摘要翻译： 一种用于紫外线光产生靶包括angepasst衬底以通过和一个发光层，设置在基板上，在电子束在响应产生紫外光到那里透过紫外光。 发光层包括粉末或颗粒状的氧化物晶体含路和Si掺杂有活化剂（例如，PR：LPS和Pr：LSO晶体）。
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公开(公告)号：EP1498215A4
公开(公告)日：2009-07-01
申请号：EP03712675
申请日：2003-03-12
发明人： FUKUYO FUMITSUGU , FUKUMITSU KENSHI
IPC分类号： B23K26/38 , B28D1/22 , B28D5/00 , C03B33/02 , C03B33/033 , C03B33/07 , H01L21/301
CPC分类号： H01L21/78 , B23K26/0057 , B23K26/40 , B23K2201/40 , B23K2203/50 , B28D1/221 , B28D5/0011 , C03B33/0222 , C03B33/033 , C03B33/07 , C03B33/074 , H01L2924/01015
摘要： A laser processing method capable of cutting with high precision a work (1) having a variety of laminated structures. A laser beam (L) is applied with a converging point (P) targeted at at least the inside of the substrate of the work (1) consisting of the substrate and a laminated portion provided on the surface (3) of the substrate, thereby forming modified area (7) by multi-phonton absorbing at least the inside of he substrate, and then a cutting start point region (8) by the modified area. The work (1) can be cut with high precision by being cut along this cutting start point region (8).
摘要翻译： 一种能够高精度地切割具有各种层压结构的工件（1）的激光加工方法。 激光束（L）以会聚点（P）施加，所述会聚点（P）至少针对由基底和设置在基底表面（3）上的层压部分组成的工件（1）的基底内部的会聚点 通过至少吸收基材内部的多个薄膜形成改性区域（7），然后通过改性区域形成切割起点区域（8）。 通过沿着该切断起点区域（8）切断，能够高精度地切断工件（1）。
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公开(公告)号：EP1580800A4
公开(公告)日：2009-09-16
申请号：EP03812274
申请日：2003-09-11
IPC分类号： H01L21/301 , B23K26/08 , B23K26/38 , B23K101/40 , B28D1/22 , B28D5/00 , H01L21/58 , H01L21/68 , H01L21/78
CPC分类号： H01L21/2633 , B23K26/0057 , B23K26/0853 , B23K26/40 , B23K2201/40 , B23K2203/50 , B28D1/221 , H01L21/6835 , H01L21/6836 , H01L21/78 , H01L24/27 , H01L24/29 , H01L24/83 , H01L2221/68327 , H01L2221/68336 , H01L2224/274 , H01L2224/2919 , H01L2224/83191 , H01L2224/8385 , H01L2924/01005 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01027 , H01L2924/0103 , H01L2924/01033 , H01L2924/01039 , H01L2924/0106 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/07802 , H01L2924/10329 , H01L2924/12042 , H01L2924/12043 , H01L2924/351 , H01L2924/3512 , H01L2924/00
摘要： Multiphoton absorption is generated, so as to form a part which is intended to be cut 9 due to a molten processed region 13 within a silicon wafer 11, and then an adhesive sheet 20 bonded to the silicon wafer 11 is expanded. This cuts the silicon wafer 11 along the part which is intended to be cut 9 with a high precision into semiconductor chips 25. Here, opposing cut sections 25a, 25a of neighboring semiconductor chips 25, 25 are separated from each other from their close contact state, whereby a die-bonding resin layer 23 is also cut along the part which is intended to be cut 9. Therefore, the silicon wafer 11 and die-bonding resin layer 23 can be cut much more efficiently than in the case where the silicon wafer 11 and die-bonding resin layer 23 are cut with a blade without cutting a base 21.
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公开(公告)号：EP1670046A4
公开(公告)日：2009-07-01
申请号：EP04787826
申请日：2004-09-09
CPC分类号： B23K26/0884 , B23K26/0057 , B23K26/40 , B23K2201/40 , B23K2203/50 , B28D5/0011
摘要： A semiconductor substrate cutting method for efficiently cutting a semiconductor substrate on which a functional element is formed and a die-bond resin layer. A laser beam (L) is made to fall on the back (17) of a wafer (11) on the front surface (3) of which a functional element (15) is formed. The laser beam (L) is focused at the focal point (P) inside the wafer (11) to cause multiphoton absorption. As a result, a cut start region (8) thanks to a fusion treatment region (13) is formed inside the wafer (11) along a line (5) to be cut. Thus, fracture is caused from the cutting start region (8) naturally or with a relatively weak force. The fracture can be made to reach the back (17) from the front surface (3). Therefore, after the formation of the cutting start region (8), an extension film (21) is bonded to a die-bond resin layer (23) formed on the back (17). When the extension film (21) is extended, the wafer (11) and the die-bond resin layer (23) can be cut along the line (5).
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5.发明公开LASER BEAM MACHINING METHOD AND LASER BEAM MACHINING DEVICE 有权LASERSTRAHLBEARBEITUNGS-VERFAHREN UND LASERSTRAHLBEARBEITUNGS-VORRICHTUNG
公开(公告)号：EP1338371A4
公开(公告)日：2008-08-06
申请号：EP01965620
申请日：2001-09-13
IPC分类号： B28D5/00 , B23K26/073 , B23K26/38 , B23K101/40 , C03B33/023 , C03B33/08 , C03B33/10 , C03C23/00 , G02F1/1368 , H01L21/301 , B23K26/00
CPC分类号： H01L21/78 , B23K20/023 , B23K20/16 , B23K20/233 , B23K20/26 , B23K26/0057 , B23K26/03 , B23K26/032 , B23K26/034 , B23K26/046 , B23K26/0624 , B23K26/066 , B23K26/073 , B23K26/0853 , B23K26/16 , B23K26/364 , B23K26/40 , B23K2201/40 , B23K2203/50 , B28D5/0011 , B65G2249/04 , C03B33/023 , C03B33/082 , C03B33/102 , C03C23/0025 , G02F1/1368 , H01L21/6836 , H01L2221/68327 , Y02P40/57 , Y10T29/49144 , Y10T83/0341
摘要： A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein a pulse laser beam (L) is radiated on the predetermined cut line (5) on the surface (3) of the work (1) under the conditions causing a multiple photon absorption and with a condensed point (P) aligned to the inside of the work (1), and a modified area is formed inside the work (1) along the predetermined cut line (5) by moving the condensed point (P) along the predetermined cut line (5), whereby the work (1) can be cut with a rather small force by cracking the work (1) along the predetermined cut line (5) starting from the modified area and, because the pulse laser beam (L) radiated is not almost absorbed onto the surface (3) of the work (1), the surface (3) is not fused even if the modified area is formed.
摘要翻译： 一种激光束加工方法和激光束加工装置，其能够切割工件而不会产生工件表面上的预定切割线的定影和裂纹，其中脉冲激光束（L）辐射在预定切口 并且在工件（1）的内部对准的凝聚点（P）的条件下，在工件（1）的表面（3）上形成线（5） 通过沿着预定的切割线（5）移动凝聚点（P）沿着预定的确定切割线（5）的工件（1），从而可以通过破裂工件以相当小的力来切割工件（1） 1）沿着从修改区域开始的预定切割线（5），并且由于辐射的脉冲激光束（L）几乎不被吸收到工件（1）的表面（3）上，所以表面（3）不是 即使形成了修饰区域也融合。
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6.发明公开
公开(公告)号：EP2913378A4
公开(公告)日：2016-09-14
申请号：EP13849168
申请日：2013-09-06
发明人： HONDA YOSHINORI , TAKETOMI HIROYUKI , FUKUYO FUMITSUGU , KAWAI KOJI , TAKAOKA HIDETSUGU , ICHIKAWA NORIO , SUZUKI TAKASHI
CPC分类号： H01J63/06 , C09K11/7774 , C23C16/40 , H01J63/04
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7.发明公开
公开(公告)号：EP2913376A4
公开(公告)日：2016-08-03
申请号：EP13848529
申请日：2013-09-06
发明人： HONDA YOSHINORI , TAKETOMI HIROYUKI , FUKUYO FUMITSUGU , KAWAI KOJI , TAKAOKA HIDETSUGU , SUZUKI TAKASHI
CPC分类号： H01J63/06 , B05D5/061 , C09K11/7774 , C09K2211/1416 , H01J9/221
摘要： A target for ultraviolet light generation comprises a substrate adapted to transmit ultraviolet light therethrough and a light-emitting layer disposed on the substrate and generating ultraviolet light UV in response to an electron beam. The light-emitting layer includes a powdery or granular rare-earth-containing aluminum garnet crystal doped with an activator. The light-emitting layer has an ultraviolet light emission peak wavelength of 300 nm or shorter.
摘要翻译： 一种用于紫外线光产生靶包括angepasst衬底以通过那里透过紫外光和设置在所述基板的发光层和产生紫外光UV响应于在电子束。 发光层包括粉状或在活化剂掺杂有粒状的含类铝石榴石晶体。 发光层具有在紫外线为300nm或更短的光发射峰值波长。
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公开(公告)号：EP1609558A4
公开(公告)日：2009-07-01
申请号：EP03712673
申请日：2003-03-12
发明人： FUKUYO FUMITSUGU , FUKUMITSU KENSHI , UCHIYAMA NAOKI , WAKUDA TOSHIMITSU , ATSUMI KAZUHIRO , MURAMATSU KENICHI
CPC分类号： B23K26/18 , B23K26/0057 , B23K26/40 , B23K26/60 , B23K2201/40 , B23K2203/50 , B28D1/221 , B28D5/0011
摘要： A laser beam machining method capable of accurately cutting a workpiece along predicted cut lines, comprising the steps of forming cut start areas (8) in the workpiece (1) along the predicted cut lines (5) by reformed areas (7) formed by multiple photon absorption, and radiating laser beam (L2) having a permeability for the non-reformed areas of the workpiece (1) onto the workpiece (1) along the predicted cut lines (5) to produce cracks (24) in the workpiece (1) starting at the cut start areas (5), whereby the workpiece (1) can be accurately cut along the predicted cut lines (5) and, since chips (25) are separated from each other by extending an extension film (19) for fixing the workpiece (1) thereto, the certainty of cutting of the workpiece (1) along the predicted cut lines (5) can be further increased.
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公开(公告)号：EP1498216A4
公开(公告)日：2009-07-01
申请号：EP03744054
申请日：2003-03-11
发明人： FUKUYO FUMITSUGU , FUKUMITSU KENSHI
IPC分类号： B23K26/38 , B28D1/22 , B28D5/00 , C03B33/02 , C03B33/033 , C03B33/07 , H01L21/301
CPC分类号： H01L21/78 , B23K26/0057 , B23K26/40 , B23K2201/40 , B23K2203/50 , B28D1/221 , B28D5/0011 , C03B33/0222 , C03B33/033 , C03B33/07 , C03B33/074 , H01L2924/01015
摘要： A method of cutting a processed object capable of accurately cutting a processed object, comprising the steps of radiating laser beam (L) to the inside of the processed object (1) such as a silicon wafer with a condensing point (P) focused thereto to form reformed areas (7) in the processed object (1) by absorbing multiple photons, forming cut start areas (8) eccentric from the centerline (CL) of the processed object (1) in thickness direction to the surface (3) side of the processed object (1) along a predicted cut line, and pressing the processed object (1) from the rear (21) side thereof, whereby the processed object (1) can be accurately cut along the predicted cut line by producing cracking starting at the cut start areas (8).
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10.发明公开ULTRAVIOLET LIGHT GENERATING TARGET, ELECTRON-BEAM-EXCITED ULTRAVIOLET LIGHT SOURCE, AND METHOD FOR PRODUCING ULTRAVIOLET LIGHT GENERATING TARGET 审中-公开UV光发生TARGET，电子激发UV光源和制造方法UV光发生TARGETS
公开(公告)号：EP2703471A4
公开(公告)日：2014-10-15
申请号：EP12777284
申请日：2012-04-24
发明人： HONDA YOSHINORI , FUKUYO FUMITSUGU , KASAMATSU YUJI , SUZUKI TAKASHI , HATTORI TAKEAKI , KAWAI KOJI , CHU SHUCHENG , TAKETOMI HIROYUKI
摘要： An ultraviolet light generating target 20 includes a substrate 21 made of sapphire, quartz, or rock crystal; and a light-emitting layer 22 that is provided on the substrate 21 and that generates ultraviolet light upon receiving an electron beam. The light-emitting layer 22 includes powdered or granular Pr:LuAG crystals. By using such a light-emitting layer 22 as the target, the ultraviolet light generating efficiency can be increased more remarkably than when a Pr:LuAG single crystal film is used.
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