COMPUTE CLUSTERS EMPLOYING PHOTONIC INTERCONNECTIONS FOR TRANSMITTING OPTICAL SIGNALS BETWEEN COMPUTE CLUSTER NODES
    1.
    发明公开
    COMPUTE CLUSTERS EMPLOYING PHOTONIC INTERCONNECTIONS FOR TRANSMITTING OPTICAL SIGNALS BETWEEN COMPUTE CLUSTER NODES 有权
    声明CLUSTER,光子化合物用于光信号之间的金融集群节点好处传输

    公开(公告)号:EP1977572A2

    公开(公告)日:2008-10-08

    申请号:EP07762485.6

    申请日:2007-01-23

    摘要: Various embodiments of the present invention are directed to photonic- interconnection-based compute clusters (1200) that provide high-speed, high-bandwidth interconnections between compute cluster nodes (1401-1404). In one embodiment of the present invention, the compute cluster (1200) includes a photonic interconnection having one or more optical transmission paths (1210,1212,1216-1219) for- transmitting independent frequency channels within an optical signal to each node in a set of nodes (1401-1404). The compute cluster (1200) includes one or more . photonic- interconnection-based writers (1500), each writer associated with a particular node, and each writer encoding information generated by the node into one of the independent frequency channels. ' A switch fabric directs the information encoded in the independent frequency channels to one or more nodes in the compute cluster. The compute cluster also includes one or more photonic-interconnection-based readers (1550), each reader associated with a particular node, and each reader extracting the information, encoded in the independent frequency channels directed to the node for processing.

    TRANSISTOR AND SENSORS MADE FROM MOLECULAR MATERIALS WITH ELECTRIC DIPOLES
    2.
    发明公开
    TRANSISTOR AND SENSORS MADE FROM MOLECULAR MATERIALS WITH ELECTRIC DIPOLES 审中-公开
    TRANSISTORS和电偶极分子材料的多个传感器

    公开(公告)号:EP1518280A2

    公开(公告)日:2005-03-30

    申请号:EP03762044.0

    申请日:2003-06-26

    IPC分类号: H01L51/20 G01N27/414

    摘要: A polarization-dependent device is provided that includes organic materials having electric dipoles. The polarization-dependent device comprises: (a) a source region and a drain region separated by a channel region having a length L, formed on a substrate: (b) a dielectric layer on a least a portion of the channel region; and (c) a molecular layer on the dielectric layer, the molecular layer comprising molecules having a switchable dipolar moiety. Addition of a gate over the molecular layer permits fabrication of a transistor, while omission of the gate, and utilization of suitable molecules that are sensitive to various changes in the environment permits fabrication of a variety of sensors. The molecular transistor and sensors are suitable for high density nanoscale circuits and are less expensive than prior art approaches.

    A LOW-FORWARD-VOLTAGE MOLECULAR RECTIFIER
    6.
    发明公开
    A LOW-FORWARD-VOLTAGE MOLECULAR RECTIFIER 审中-公开
    分子低电压整流器

    公开(公告)号:EP1506583A2

    公开(公告)日:2005-02-16

    申请号:EP03728979.0

    申请日:2003-05-16

    IPC分类号: H01L51/20

    摘要: A single molecular species having a low-forward-voltage rectifying property is provided. The molecular species is represented by the formula (a), where A is a 'conducting' moiety (with a relatively narrow HOMO-LUMO gap), IL and IR are each an 'insulating' moiety (with a relatively wide HOMO-LUMO gap), CL is a connecting group for an attachment to a first electrode, and CR is a connecting group for attachment to a second electrode. Also, a low-forward-voltage rectifying molecular rectifier is provided, comprising the molecular species attached between the two electrodes. The present teachings provide a set of design rues to build single-molecule rectifying diodes that opearte at low forward and large revers voltages. Such single-molecule rectifying diodes are useful in a variety of nano-scale applications.

    INDIRECT-BANDGAP-SEMICONDUCTOR, LIGHT-EMITTING DIODE
    8.
    发明公开
    INDIRECT-BANDGAP-SEMICONDUCTOR, LIGHT-EMITTING DIODE 审中-公开
    间接禁带半导体发光二极管

    公开(公告)号:EP2412036A1

    公开(公告)日:2012-02-01

    申请号:EP09842416.1

    申请日:2009-03-23

    IPC分类号: H01L33/00

    CPC分类号: H01L33/34 H01L33/0012

    摘要: An indirect-bandgap-semiconductor, light-emitting diode. The indirect-bandgap-semiconductor, light-emitting diode includes a plurality of portions including a p-doped portion of an indirect-bandgap semiconductor, an intrinsic portion of the indirect-bandgap semiconductor, and a n-doped portion of the indirect-bandgap semiconductor. The intrinsic portion is disposed between the p-doped portion and the n-doped portion and forms a p-i junction with the p-doped portion, and an i-n junction with the n-doped portion. The p-i junction and the i-n junction are configured to facilitate formation of at least one hot electron-hole plasma in the intrinsic portion when the indirect-bandgap-semiconductor, light-emitting diode is reverse biased and to facilitate luminescence produced by recombination of a hot electron with a hole.