摘要:
Various embodiments of the present invention are directed to photonic- interconnection-based compute clusters (1200) that provide high-speed, high-bandwidth interconnections between compute cluster nodes (1401-1404). In one embodiment of the present invention, the compute cluster (1200) includes a photonic interconnection having one or more optical transmission paths (1210,1212,1216-1219) for- transmitting independent frequency channels within an optical signal to each node in a set of nodes (1401-1404). The compute cluster (1200) includes one or more . photonic- interconnection-based writers (1500), each writer associated with a particular node, and each writer encoding information generated by the node into one of the independent frequency channels. ' A switch fabric directs the information encoded in the independent frequency channels to one or more nodes in the compute cluster. The compute cluster also includes one or more photonic-interconnection-based readers (1550), each reader associated with a particular node, and each reader extracting the information, encoded in the independent frequency channels directed to the node for processing.
摘要:
A polarization-dependent device is provided that includes organic materials having electric dipoles. The polarization-dependent device comprises: (a) a source region and a drain region separated by a channel region having a length L, formed on a substrate: (b) a dielectric layer on a least a portion of the channel region; and (c) a molecular layer on the dielectric layer, the molecular layer comprising molecules having a switchable dipolar moiety. Addition of a gate over the molecular layer permits fabrication of a transistor, while omission of the gate, and utilization of suitable molecules that are sensitive to various changes in the environment permits fabrication of a variety of sensors. The molecular transistor and sensors are suitable for high density nanoscale circuits and are less expensive than prior art approaches.
摘要:
An apparatus (100) for controlling propagation of incident electromagnetic radiation (110) is described, comprising a composite material (102) having electromagnetically reactive cells (106) of small dimension relative to a wavelength of the incident electromagnetic radiation (110). At least one of a capacitive and inductive property of at least one of the electromagnetically reactive cells (106) is temporally controllable to allow temporal control of an associated effective refactive index encountered by the incident electromagnetic radiation (110) while propagating through the composite material (106).
摘要:
A composition of matter is provided that results in a change of electrical properties through intra-molecular charge transfer or inter-molecular charge transfer or charge transfer between a molecule (12) and an electrode (14, 16; 14', 16'), wherein the charge transfer is induced by an electric field.
摘要:
A grid heat sink (400) includes a base (420), a plurality of intersecting fins (410, 415), and a plurality of channels (405) formed by the intersecting fins. Each of the channels (405) accepts cooling air (1605) at an input side of the grid heat sink (400) and directs the cooling air (1605) to an exit at an output side of said grid heat sink (400).
摘要:
A single molecular species having a low-forward-voltage rectifying property is provided. The molecular species is represented by the formula (a), where A is a 'conducting' moiety (with a relatively narrow HOMO-LUMO gap), IL and IR are each an 'insulating' moiety (with a relatively wide HOMO-LUMO gap), CL is a connecting group for an attachment to a first electrode, and CR is a connecting group for attachment to a second electrode. Also, a low-forward-voltage rectifying molecular rectifier is provided, comprising the molecular species attached between the two electrodes. The present teachings provide a set of design rues to build single-molecule rectifying diodes that opearte at low forward and large revers voltages. Such single-molecule rectifying diodes are useful in a variety of nano-scale applications.
摘要:
Various embodiments of the present invention are directed to sensor networks and to methods for fabricating sensor networks. In one aspect, a sensor network includes a processing node (110, 310), and one or more sensor lines (102,202,302) optically coupled to fee processing node. Each sensor line comprises a waveguide {116,216,316), and one or more sensor nodes (112,210), Each sensor node is optically coupled to the waveguide and configured to measure one or more physical conditions and encode measurement results in one or more wavelengths of light carried by the waveguide to the processing node.
摘要:
An indirect-bandgap-semiconductor, light-emitting diode. The indirect-bandgap-semiconductor, light-emitting diode includes a plurality of portions including a p-doped portion of an indirect-bandgap semiconductor, an intrinsic portion of the indirect-bandgap semiconductor, and a n-doped portion of the indirect-bandgap semiconductor. The intrinsic portion is disposed between the p-doped portion and the n-doped portion and forms a p-i junction with the p-doped portion, and an i-n junction with the n-doped portion. The p-i junction and the i-n junction are configured to facilitate formation of at least one hot electron-hole plasma in the intrinsic portion when the indirect-bandgap-semiconductor, light-emitting diode is reverse biased and to facilitate luminescence produced by recombination of a hot electron with a hole.
摘要:
A covert label structure comprising a three dimensional diffracting optical element layer (100) having a depth profile for producing a predetermined pattern, wherein different portions of a top surface of the diffracting optical element layer (100) have at least two different depths relative to a bottom surface of the diffracting optical element layer (100), wherein the depth profile spans across two dimensions of the top surface of the diffracting optical element layer (100), and wherein the top surface reflects light according to the predefined pattern and an overcoat layer (108) over the top surface of the diffracting optical element layer (100) wherein the overcoat layer (108) is opaque to at least one wavelength of light.