公开(公告)号：EP0228212A3

公开(公告)日：1989-09-27

申请号：EP86309619.4

申请日：1986-12-10

申请人： HITACHI, LTD.

发明人： Funamoto, Takao ,  Katou, Mituo ,  Kajiwara, Ryoichi ,  Matsuzaka, Takeshi ,  Shida, Tomohiko ,  Takahashi, Kazuya ,  Wachi, Hiroshi ,  Watanabe, Masatoshi ,  Yamada, Minoru ,  Sugawara, Katuo ,  Nakanishi, Keiichirou

IPC分类号： H05K7/20 ,  H01L23/46 ,  H01L23/52 ,  H01L23/42

CPC分类号： H05K1/0373 ,  H01L23/473 ,  H01L23/5383 ,  H01L23/5385 ,  H01L2924/0002 ,  H05K1/0272 ,  H05K2201/0209 ,  H05K2201/0251 ,  H05K2201/064 ,  H01L2924/00

摘要： An integrated circuit device has a wiring substrate (2) on one surface of which integrated circuit chips (l) are mounted. A power source substrate (5) of a laminated structure is in contact with the opposite surface of the wiring substrate (2), the power source substrate being of alternate laminations of conductor layers (7) of a heat conductive metal and insulating layers (6) of an elec­trically insulating material, which layers are bonded together. Means such as pins (4) electrically connect the wiring substrate and the power source substrate to each other, and hence connect the chips (l) to the conductive layers (7), a heat radiating means is provided in at least one of either or both of the conductor layers (7) and the insulating layers (6) and radiates heat, which occurs in the power source substrate (5), to the exterior of the device. Such an integrated circuit device has a power source substrate (5) of a remarkably high heat radiating effici­ency, and may permit a high density of integrated circuit chips (l) on the wiring substrate (2).

公开(公告)号：EP0228212B1

公开(公告)日：1991-08-07

申请号：EP86309619.4

申请日：1986-12-10

申请人： HITACHI, LTD.

发明人： Funamoto, Takao ,  Katou, Mituo ,  Kajiwara, Ryoichi ,  Matsuzaka, Takeshi ,  Shida, Tomohiko ,  Takahashi, Kazuya ,  Wachi, Hiroshi ,  Watanabe, Masatoshi ,  Yamada, Minoru ,  Sugawara, Katuo ,  Nakanishi, Keiichirou

IPC分类号： H05K7/20 ,  H01L23/46 ,  H01L23/52 ,  H01L23/42

CPC分类号： H05K1/0373 ,  H01L23/473 ,  H01L23/5383 ,  H01L23/5385 ,  H01L2924/0002 ,  H05K1/0272 ,  H05K2201/0209 ,  H05K2201/0251 ,  H05K2201/064 ,  H01L2924/00

公开(公告)号：EP0228212A2

公开(公告)日：1987-07-08

申请号：EP86309619.4

申请日：1986-12-10

申请人： HITACHI, LTD.

发明人： Funamoto, Takao ,  Katou, Mituo ,  Kajiwara, Ryoichi ,  Matsuzaka, Takeshi ,  Shida, Tomohiko ,  Takahashi, Kazuya ,  Wachi, Hiroshi ,  Watanabe, Masatoshi ,  Yamada, Minoru ,  Sugawara, Katuo ,  Nakanishi, Keiichirou

IPC分类号： H05K7/20 ,  H01L23/46 ,  H01L23/52 ,  H01L23/42

CPC分类号： H05K1/0373 ,  H01L23/473 ,  H01L23/5383 ,  H01L23/5385 ,  H01L2924/0002 ,  H05K1/0272 ,  H05K2201/0209 ,  H05K2201/0251 ,  H05K2201/064 ,  H01L2924/00

摘要： An integrated circuit device has a wiring substrate (2) on one surface of which integrated circuit chips (l) are mounted. A power source substrate (5) of a laminated structure is in contact with the opposite surface of the wiring substrate (2), the power source substrate being of alternate laminations of conductor layers (7) of a heat conductive metal and insulating layers (6) of an elec­trically insulating material, which layers are bonded together. Means such as pins (4) electrically connect the wiring substrate and the power source substrate to each other, and hence connect the chips (l) to the conductive layers (7), a heat radiating means is provided in at least one of either or both of the conductor layers (7) and the insulating layers (6) and radiates heat, which occurs in the power source substrate (5), to the exterior of the device. Such an integrated circuit device has a power source substrate (5) of a remarkably high heat radiating effici­ency, and may permit a high density of integrated circuit chips (l) on the wiring substrate (2).