摘要:
In a method for correcting deflection distortions which develop in an apparatus for delineating a pattern on a sample by scanning a charged particle beam (5), this invention makes the corrections of the deflection distortions in accordance with a height (deformation) of a portion to-be-delineated on the sample (for example, wafer) on the basis of correction magnitudes of the deflection distortions at respective reference levels of a mark as obtained by scanning the charged particle beam (5) on the mark which has at least two reference levels (10, 11) having unequal heights in a direction of the optical axis.
摘要:
There is disclosed a lithography apparatus in which a charged particle ray such as an electron beam or an ion beam is controlled to scan a desired region of a sample and thereby draw a pattern, comprising a framing pattern memory (4) for storing therein framing lines of a pattern to be drawn in the form of dot images, a framing pattern generator (3) for writing the framing lines of the pattern to be drawn into said framing pattern memory in the form of dot images, and a raster scanning circuit for drawing (5) for scanning said framing pattern memory having the framing lines of the pattern to be drawn written therein and for generating a beam deflection address for drawing (207, 208) and a beam blanking control signal (211).
摘要:
A charged particle beam lithography system has a high-throughput and inexpensive system configuration. The system configuration is constituted by a plurality of charged particle optical systems (17, 18, 19) each adapted to focus and deflect a beam of charged particles and irradiate the beam onto a specimen (10) so that the beam draws a desired pattern on the specimen, a plurality of deflection distortion correcting circuits (14, 15, 16) each associated with each of the charged particle optical systems for correcting a deflection distortion of each charged particle optical system, and a common pattern data control circuit (1, 3, 4) for supplying data of a pattern to be drawn to each of the plurality of deflection distortion correcting circuits.
摘要:
An exposure method with an electron beam exposure apparatus in which an electron beam is emitted onto a substrate (1) such as a silicon wafer on which an electron-beam sensitive resist is coated, thereby directly forming or writing patterns. A substrate (1) having thereon a number of chips (2) are divided into blocks (3), marks (4) are provided on each of the blocks (3), the positions of the marks (4) are detected and the writing exposure positions of the chips (2) within each block (3) are modified on the basis of the detection results. According to this invention, efficient writing exposure can be made with high accuracy.
摘要:
A charged particle beam lithography system has a high-throughput and inexpensive system configuration. The system configuration is constituted by a plurality of charged particle optical systems (17, 18, 19) each adapted to focus and deflect a beam of charged particles and irradiate the beam onto a specimen (10) so that the beam draws a desired pattern on the specimen, a plurality of deflection distortion correcting circuits (14, 15, 16) each associated with each of the charged particle optical systems for correcting a deflection distortion of each charged particle optical system, and a common pattern data control circuit (1, 3, 4) for supplying data of a pattern to be drawn to each of the plurality of deflection distortion correcting circuits.
摘要:
There is disclosed a lithography apparatus in which a charged particle ray such as an electron beam or an ion beam is controlled to scan a desired region of a sample and thereby draw a pattern, comprising a framing pattern memory (4) for storing therein framing lines of a pattern to be drawn in the form of dot images, a framing pattern generator (3) for writing the framing lines of the pattern to be drawn into said framing pattern memory in the form of dot images, and a raster scanning circuit for drawing (5) for scanning said framing pattern memory having the framing lines of the pattern to be drawn written therein and for generating a beam deflection address for drawing (207, 208) and a beam blanking control signal (211).