DICHROIC DYE-CONTAINING LIQUID, AND POLARIZER
    1.
    发明公开
    DICHROIC DYE-CONTAINING LIQUID, AND POLARIZER 审中-公开
    极地主义者红十字国际委员会

    公开(公告)号:EP2554605A1

    公开(公告)日:2013-02-06

    申请号:EP11762826.3

    申请日:2011-03-29

    申请人: Hoya Corporation

    IPC分类号: C08L101/00 C08K5/00 G02B5/30

    CPC分类号: G02B5/3041 C08K5/0041

    摘要: To provide a dichroic dye-containing liquid that is capable of preventing haze without decrease of adhesiveness of a polarizing layer, and a polarizer.
    The dichroic dye-containing liquid contains (A) a dichroic dye and (B) a toughness-imparting agent, in which the dichroic dye (A) and the toughness-imparting agent (B) are dispersed or dissolved in an aqueous medium, and a solid content X (% by mass) of the toughness-imparting agent (B) based on the dichroic dye-containing liquid and a 100% modulus Y (MPa) of the toughness-imparting agent (B) satisfy relationships represented by the following expressions (1) and (2):


    and the polarizer contains a substrate having provided sequentially thereon an orientation layer and a polarizing layer, in which the polarizing layer containing a dichroic dye that is oriented and accumulated by using the dichroic dye-containing liquid.

    摘要翻译: 提供能够防止雾度而不降低偏振层的粘附性的二色性含染料液体和偏振片。 二色性染料的液体含有(A)二色性染料和(B)赋予二色性染料(A)和韧性赋予剂(B)在水性介质中分散或溶解的韧性赋予剂, 基于含二色性染料的液体的韧性赋予剂(B)的固体成分X(质量%)和韧性赋予剂(B)的100%模量Y(MPa)满足以下所示的关系 表达式(1)和(2):并且偏振片包含依次设置有取向层和偏光层的基板,其中含有通过使用含二色性染料的液体取向和累积的二色性染料的偏振层。

    POLARIZING ELEMENT AND PROCESS FOR PRODUCING POLARIZING ELEMENT
    2.
    发明公开
    POLARIZING ELEMENT AND PROCESS FOR PRODUCING POLARIZING ELEMENT 有权
    维多利亚革命武装力量极地主义

    公开(公告)号:EP2259101A1

    公开(公告)日:2010-12-08

    申请号:EP09723699.6

    申请日:2009-03-27

    申请人: Hoya Corporation

    发明人: YANAGITA, Hiroaki

    IPC分类号: G02B5/30

    摘要: A polarizing element comprising an alignment layer and a polarizing layer formed by aligning a dichroic coloring agent by deposition which are successively disposed on a substrate, wherein the alignment layer is a sol-gel film formed by using a material comprising at least (A) a sol of an inorganic oxide and (B) an alkoxysilane and/or a hexaalkoxydisiloxane, and the ratio of amounts by mole of Component (B) to solid components in Component (A) [(B)/(A)(solid components)] is 99.9/0.1 to 40/60; and a process for producing the polarizing element. The polarizing element can be produced in simple steps, the treatment of abrasion of the surface necessary for alignment of a dichroic coloring agent by deposition is facilitated, and haze due to formation of cracks is absent.

    摘要翻译: 一种偏振元件,其特征在于,具有取向膜和偏光层,所述偏光层通过将连续配置在基板上的沉积物形成的二色性着色剂形成,其中,所述取向膜为通过使用至少含有(A) 无机氧化物的溶胶和(B)烷氧基硅烷和/或六烷氧基二硅氧烷,以及组分(B)与组分(A)[(B)/(A)(固体组分)]中的固体组分的摩尔比 为99.9 / 0.1〜40/60; 以及用于制造偏振元件的方法。 偏振元件可以通过简单的步骤制造,因此通过沉积来对二色性着色剂进行排列所需的表面磨损的处理变得容易,并且不存在由于形成裂缝而引起的雾度。

    LIGHT-EMITTING DIODE
    3.
    发明公开
    LIGHT-EMITTING DIODE 审中-公开
    发光二极管

    公开(公告)号:EP1622207A1

    公开(公告)日:2006-02-01

    申请号:EP04729225.5

    申请日:2004-04-23

    申请人: HOYA CORPORATION

    IPC分类号: H01L33/00

    摘要: A light-emitting diode with high luminous efficiency is provided which is free from deformation or defects of a crystal caused by a dopant. The light-emitting diode emits no light of unnecessary wavelengths and has a wide selection of emission wavelengths. The light-emitting diode comprises a light-emitting layer made of an ambipolar semiconductor containing no dopant, and an electron implanting electrode, that is, an n-electrode and a hole implanting electrode, that is, a p-electrode joined to the light-emitting layer.

    摘要翻译: 提供了具有高发光效率的发光二极管,其没有由掺杂物引起的晶体变形或缺陷。 发光二极管不发射不必要的波长的光并且具有广泛的发射波长选择。 该发光二极管包括由不含掺杂剂的双极性半导体制成的发光层和电子注入电极,即,n电极和空穴注入电极,即与光接合的p电极 发射层。

    ELECTRODE MATERIAL AND SEMICONDUCTOR DEVICE
    4.
    发明公开
    ELECTRODE MATERIAL AND SEMICONDUCTOR DEVICE 审中-公开
    ELEKTRODENMATERIAL UND HALBLEITERBAUEMENT

    公开(公告)号:EP1619693A1

    公开(公告)日:2006-01-25

    申请号:EP04729235.4

    申请日:2004-04-23

    申请人: HOYA CORPORATION

    IPC分类号: H01B1/06 H01L21/28 H01L33/00

    摘要: As a p-type ohmic contact electrode formation technique in a Group II-VI compound semiconductor, there is provided a material for forming an electrode that is low in resistance, stable, and not toxic, and is excellent in productivity, thereby providing an excellent semiconductor element.
    A semiconductor electrode material in the form of a material represented by a composition formula A X B Y C Z (A: at least one element selected from Group 1B metal elements, B: at least one element selected from Group 8 metal elements, C: at least one element selected from S and Se), where X, Y, and Z are such that X+Y+Z=1, 0.20≤X≤0.35, 0.17≤Y≤0.30, and 0.45≤Z≤0.55.

    摘要翻译: 作为II-VI族化合物半导体中的p型欧姆接触电极形成技术,提供了一种电阻低,稳定性和无毒性的电极形成用材料,其生产率优异, 半导体元件。 由组成式AXBYCZ表示的材料形式的半导体电极材料(A:选自1B族金属元素中的至少一种元素,B:选自第8族金属元素中的至少一种元素,C:选自至少一种元素 来自S和Se),其中X,Y和Z使得X + Y + Z = 1,0.20‰×‰‰0.35,0.17‰¤Y‰¤0.30和0.45‰¤Z‰¤0.55。

    SEMICONDUCTOR MATERIAL AND SEMICONDUCTOR DEVICE USING SAME
    6.
    发明公开
    SEMICONDUCTOR MATERIAL AND SEMICONDUCTOR DEVICE USING SAME 审中-公开
    HALBLEITERMATERIAL UND HALBLEITERBAUELEMENT DAMIT

    公开(公告)号:EP1746663A1

    公开(公告)日:2007-01-24

    申请号:EP05709689.3

    申请日:2005-02-03

    申请人: HOYA CORPORATION

    IPC分类号: H01L33/00

    摘要: It is an object to provide a p-type ZnS based semiconductor material having a low resistance which can easily form an ohmic contact to a metallic material. Moreover, the invention provides a semiconductor device and a semiconductor light emitting device which include an electrode having a low resistance on a substrate other than a single crystal substrate, for example, a glass substrate.
    The semiconductor material according to the invention is used as a hole injecting electrode layer of a light emitting device and has a transparent property in a visible region which is expressed in a composition formula of Zn (1-α-β-γ) Cu α Mg β Cd γ S (1-x-y) Se x Te y (0.004 ≦ α ≦ 0.4, β ≦ 0.2, γ ≦ 0.2, 0 ≦ x ≦ 1, 0 ≦ y ≦ 0.2, and x + y ≦ 1).

    摘要翻译: 本发明的目的是提供具有低电阻的p型ZnS基半导体材料,其可以容易地与金属材料形成欧姆接触。 此外,本发明提供了一种半导体器件和半导体发光器件,其包括在单晶衬底(例如玻璃衬底)以外的衬底上具有低电阻的电极。 根据本发明的半导体材料用作发光器件的空穴注入电极层,并且在Zn(1-±-23)Cu±Mg的组成式中表示的可见光区域具有透明性 ²Cd³S(1-xy)Se x Te y(0.004‰|±‰| 0.4,²‰| 0.2,³‰| 0.2,0‰| x‰| 1,0‰| y‰| 0.2,x + y‰| 1)。

    LIGHT-EMITTING DEVICE OF FIELD-EFFECT TRANSISTOR TYPE
    7.
    发明公开
    LIGHT-EMITTING DEVICE OF FIELD-EFFECT TRANSISTOR TYPE 审中-公开
    LICHTEMISSIONSBAUELEMENT DES FELDEFFEKTTRANSISTORTYPS

    公开(公告)号:EP1478031A1

    公开(公告)日:2004-11-17

    申请号:EP03706954.9

    申请日:2003-02-18

    申请人: Hoya Corporation

    IPC分类号: H01L33/00

    摘要: A theme is to provide a field-effect light-emitting device that can obtain a long-term reliability and broaden a selectivity of emission wavelength.
    The invention of this application is a field-effect transistor type light-emitting device having an electron injection electrode, i.e. a source electrode, a hole injection electrode, i.e. a drain electrode, an emission active member disposed between the source electrode and the drain electrode so as to contact with both electrodes, and a field application electrode, i.e. a gate electrode, for inducing electrons and holes in the emission active member, which is disposed in the vicinity of the emission active member via an electrically insulating member or an insulation gap. The emission active member is made of an inorganic semiconductor material having both an electron transporting property and a hole transporting property.

    摘要翻译: 一个主题是提供可以获得长期可靠性并扩大发射波长选择性的场效应发光器件。 本申请的发明是一种场效应晶体管型发光器件,其具有电子注入电极,即源电极,空穴注入电极,即漏电极,位于源电极之间的发射有源元件 和漏电极,与两电极接触;以及场施加电极,即栅电极,用于在发射有源部件中诱发电子和空穴,该放电有源部件通过电绝缘部件设置在发射有源部件附近 或绝缘间隙。 发射有源部件由具有电子传输性和空穴传输性的无机半导体材料制成。