摘要:
To provide a dichroic dye-containing liquid that is capable of preventing haze without decrease of adhesiveness of a polarizing layer, and a polarizer. The dichroic dye-containing liquid contains (A) a dichroic dye and (B) a toughness-imparting agent, in which the dichroic dye (A) and the toughness-imparting agent (B) are dispersed or dissolved in an aqueous medium, and a solid content X (% by mass) of the toughness-imparting agent (B) based on the dichroic dye-containing liquid and a 100% modulus Y (MPa) of the toughness-imparting agent (B) satisfy relationships represented by the following expressions (1) and (2):
and the polarizer contains a substrate having provided sequentially thereon an orientation layer and a polarizing layer, in which the polarizing layer containing a dichroic dye that is oriented and accumulated by using the dichroic dye-containing liquid.
摘要:
A polarizing element comprising an alignment layer and a polarizing layer formed by aligning a dichroic coloring agent by deposition which are successively disposed on a substrate, wherein the alignment layer is a sol-gel film formed by using a material comprising at least (A) a sol of an inorganic oxide and (B) an alkoxysilane and/or a hexaalkoxydisiloxane, and the ratio of amounts by mole of Component (B) to solid components in Component (A) [(B)/(A)(solid components)] is 99.9/0.1 to 40/60; and a process for producing the polarizing element. The polarizing element can be produced in simple steps, the treatment of abrasion of the surface necessary for alignment of a dichroic coloring agent by deposition is facilitated, and haze due to formation of cracks is absent.
摘要:
A light-emitting diode with high luminous efficiency is provided which is free from deformation or defects of a crystal caused by a dopant. The light-emitting diode emits no light of unnecessary wavelengths and has a wide selection of emission wavelengths. The light-emitting diode comprises a light-emitting layer made of an ambipolar semiconductor containing no dopant, and an electron implanting electrode, that is, an n-electrode and a hole implanting electrode, that is, a p-electrode joined to the light-emitting layer.
摘要:
As a p-type ohmic contact electrode formation technique in a Group II-VI compound semiconductor, there is provided a material for forming an electrode that is low in resistance, stable, and not toxic, and is excellent in productivity, thereby providing an excellent semiconductor element. A semiconductor electrode material in the form of a material represented by a composition formula A X B Y C Z (A: at least one element selected from Group 1B metal elements, B: at least one element selected from Group 8 metal elements, C: at least one element selected from S and Se), where X, Y, and Z are such that X+Y+Z=1, 0.20≤X≤0.35, 0.17≤Y≤0.30, and 0.45≤Z≤0.55.
摘要翻译:作为II-VI族化合物半导体中的p型欧姆接触电极形成技术,提供了一种电阻低,稳定性和无毒性的电极形成用材料,其生产率优异, 半导体元件。 由组成式AXBYCZ表示的材料形式的半导体电极材料(A:选自1B族金属元素中的至少一种元素,B:选自第8族金属元素中的至少一种元素,C:选自至少一种元素 来自S和Se),其中X,Y和Z使得X + Y + Z = 1,0.20‰×‰‰0.35,0.17‰¤Y‰¤0.30和0.45‰¤Z‰¤0.55。
摘要:
It is an object to provide a p-type ZnS based semiconductor material having a low resistance which can easily form an ohmic contact to a metallic material. Moreover, the invention provides a semiconductor device and a semiconductor light emitting device which include an electrode having a low resistance on a substrate other than a single crystal substrate, for example, a glass substrate. The semiconductor material according to the invention is used as a hole injecting electrode layer of a light emitting device and has a transparent property in a visible region which is expressed in a composition formula of Zn (1-α-β-γ) Cu α Mg β Cd γ S (1-x-y) Se x Te y (0.004 ≦ α ≦ 0.4, β ≦ 0.2, γ ≦ 0.2, 0 ≦ x ≦ 1, 0 ≦ y ≦ 0.2, and x + y ≦ 1).
摘要翻译:本发明的目的是提供具有低电阻的p型ZnS基半导体材料,其可以容易地与金属材料形成欧姆接触。 此外,本发明提供了一种半导体器件和半导体发光器件,其包括在单晶衬底(例如玻璃衬底)以外的衬底上具有低电阻的电极。 根据本发明的半导体材料用作发光器件的空穴注入电极层,并且在Zn(1-±-23)Cu±Mg的组成式中表示的可见光区域具有透明性 ²Cd³S(1-xy)Se x Te y(0.004‰|±‰| 0.4,²‰| 0.2,³‰| 0.2,0‰| x‰| 1,0‰| y‰| 0.2,x + y‰| 1)。
摘要:
A theme is to provide a field-effect light-emitting device that can obtain a long-term reliability and broaden a selectivity of emission wavelength. The invention of this application is a field-effect transistor type light-emitting device having an electron injection electrode, i.e. a source electrode, a hole injection electrode, i.e. a drain electrode, an emission active member disposed between the source electrode and the drain electrode so as to contact with both electrodes, and a field application electrode, i.e. a gate electrode, for inducing electrons and holes in the emission active member, which is disposed in the vicinity of the emission active member via an electrically insulating member or an insulation gap. The emission active member is made of an inorganic semiconductor material having both an electron transporting property and a hole transporting property.