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公开(公告)号：EP0298495B1
公开(公告)日：1993-10-06
申请号：EP88110937.5
申请日：1988-07-08
申请人： HITACHI, LTD.
发明人： Yamaguchi, Hiroshi , Saito, Keiya , Koizumi, Mitsuyoshi , Shimase, Akira , Haraichi, Satoshi , Miyauchi, Tateoki , Kuniyoshi, Shinji , Aiuchi, Susumu
IPC分类号： G03F1/00
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公开(公告)号：EP0077559A3
公开(公告)日：1983-10-05
申请号：EP82109606
申请日：1982-10-18
申请人： Hitachi, Ltd.
IPC分类号： H01L21/68
摘要： A wafer transforming device defines an airtight space by means of a base (12), a hollow case (16), and a diaphragm type chuck (18) which is fixed to the upper end of the case (16) by suction. In this space (16), a large number of vertically moving elements (24) are arranged at predetermined intervals. In the state in which a wafer is held by suction by means of the chuck (18) and in which the chuck (18) is held in contact with the upper ends of the vertically moving elements (24) by supplying a vacuum pressure into the space, the vertically moving elements (24) located within a required range are selectively actuated. Thus, the chuck (18) is pushed up, and the wafer held on the chuck by the suction is transformed into a desired state.
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公开(公告)号：EP0148477B1
公开(公告)日：1991-09-04
申请号：EP84115889.2
申请日：1984-12-20
申请人： HITACHI, LTD.
发明人： Oshida, Yoshitada , Shiba, Masataka , Nakata, Toshihiko , Koizumi, Mitsuyoshi , Nakashima, Naoto
IPC分类号： G03B41/00
CPC分类号： G03F9/7049
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4.发明公开
公开(公告)号：EP0148477A2
公开(公告)日：1985-07-17
申请号：EP84115889.2
申请日：1984-12-20
申请人： HITACHI, LTD.
发明人： Oshida, Yoshitada , Shiba, Masataka , Nakata, Toshihiko , Koizumi, Mitsuyoshi , Nakashima, Naoto
IPC分类号： G03B41/00
CPC分类号： G03F9/7049
摘要： An exposure apparatus comprises a light source (4), a mask plate (1) having an exposure pattern area section (11) and an alignment/reflection area section (30; 60), a projection lens (3), a movable stage (7) for holding a workpiece (2) having a workpiece alignment mark (22,22'), an alignment control (5, 80) and a driver for the movable stage. Before the exposure pattern area section (11) is illuminated by the light source (4) to be projected through the projection lens (3) onto the workpiece (2), the workpiece is properly aligned with the mask. Alignment between the mask plate and the workpiece is performed by the effective use of the alignment/reflection area section specifically arranged and having a specific structure. The alignment/reflection area section (30; 60) is on that surface of the mask plate (1) which does not face the light source (4) and includes a reflection portion for conducting light from another light source (503; 521-524; 51"; 90) to the workpiece and conducting light scattered from the workpiece and passing through the projection lens to the alignment control and a mask alignment mark portion for providing, when illuminated, an image of the mask alignment mark portion to the alignment control so that it detects the positional relation between the mask alignment mark portion and the workpiece alignment mark and produces a control signal for achieving alignment between the mask plate and the workpiece.
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公开(公告)号：EP0077878A1
公开(公告)日：1983-05-04
申请号：EP82105096.0
申请日：1982-06-11
申请人： Hitachi, Ltd.
IPC分类号： G03B41/00
CPC分类号： G03F7/707 , G03F7/20 , G03F7/703 , G03F9/703 , G03F9/7034
摘要： An X ray exposure process and system for transferring a mask (10) pattern (9) onto a wafer (11) with use of X ray, wherein heights on the mask at many points are measured on a light interference band basis by a mask-height masuring device (16) of non-contact measurement type at an X ray exposure position (13), said mask being mounted on a chamber (61) which is filled with a He gas and the like to prevent attenuation of an X ray source (14), heights on the wafer at many points are measured at a wafer-height measuring position defferent from said exposure position, and according to the measured results, the water is finely moved upward or downward (that is, deformed) individually independently by means of a chuck (22) which sucks and holds the wafer at many points thereon, whereby a gap (S') between the mask and wafer is adjusted to a desired level (S).
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6.发明公开Method and apparatus for correcting defects of x-ray mask 失效Verfahren und Vorrichtungfürdie Korrektur von Fehlern在Röntgenstrahlmasken。
公开(公告)号：EP0298495A2
公开(公告)日：1989-01-11
申请号：EP88110937.5
申请日：1988-07-08
申请人： HITACHI, LTD.
发明人： Yamaguchi, Hiroshi , Saito, Keiya , Koizumi, Mitsuyoshi , Shimase, Akira , Haraichi, Satoshi , Miyauchi, Tateoki , Kuniyoshi, Shinji , Aiuchi, Susumu
IPC分类号： G03F1/00
摘要： The present invention relates to method and apparatus for correcting defects of an X-ray mask comprising the steps of: irradiating a focused ion beam to at least a region having a defective portion of an X-ray mask (200) having a protective film (204, 304) and eliminating the protective film; exposing a circuit pattern (205, 305) having a defective portion (150, 160) locating under the region or setting this circuit pattern to the state near the exposure; detecting at least one of the secondary electrons, secondary ions, reflected electrons, and absorbing current generated from that region and detecting a true defective position; positioning the focused ion beam to the true defective position and irradiating the focused ion beam to the defective portion; and thereby correcting the defect.
摘要翻译： 本发明涉及一种用于校正X射线掩模缺陷的方法和装置，包括以下步骤：将聚焦离子束照射到至少具有具有保护膜的X射线掩模（200）的缺陷部分的区域（ 204,304），除去保护膜; 暴露具有位于该区域下方的缺陷部分（150,160）或将该电路图案设置为接近曝光的状态的电路图案（205,305）; 检测二次电子，二次离子，反射电子中的至少一个以及从该区域产生的吸收电流并检测真实缺陷位置; 将聚焦离子束定位到真实缺陷位置，并将聚焦离子束照射到缺陷部分; 从而校正缺陷。
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公开(公告)号：EP0148477A3
公开(公告)日：1985-09-04
申请号：EP84115889
申请日：1984-12-20
申请人： HITACHI, LTD.
发明人： Oshida, Yoshitada , Shiba, Masataka , Nakata, Toshihiko , Koizumi, Mitsuyoshi , Nakashima, Naoto
IPC分类号： G03B41/00
CPC分类号： G03F9/7049
摘要： An exposure apparatus comprises a light source (4), a mask plate (1) having an exposure pattern area section (11) and an alignment/reflection area section (30; 60), a projection lens (3), a movable stage (7) for holding a workpiece (2) having a workpiece alignment mark (22,22'), an alignment control (5, 80) and a driver for the movable stage. Before the exposure pattern area section (11) is illuminated by the light source (4) to be projected through the projection lens (3) onto the workpiece (2), the workpiece is properly aligned with the mask. Alignment between the mask plate and the workpiece is performed by the effective use of the alignment/reflection area section specifically arranged and having a specific structure. The alignment/reflection area section (30; 60) is on that surface of the mask plate (1) which does not face the light source (4) and includes a reflection portion for conducting light from another light source (503; 521-524; 51"; 90) to the workpiece and conducting light scattered from the workpiece and passing through the projection lens to the alignment control and a mask alignment mark portion for providing, when illuminated, an image of the mask alignment mark portion to the alignment control so that it detects the positional relation between the mask alignment mark portion and the workpiece alignment mark and produces a control signal for achieving alignment between the mask plate and the workpiece.
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公开(公告)号：EP0077559A2
公开(公告)日：1983-04-27
申请号：EP82109606.2
申请日：1982-10-18
申请人： Hitachi, Ltd.
IPC分类号： H01L21/68
摘要： A wafer transforming device defines an airtight space by means of a base (12), a hollow case (16), and a diaphragm type chuck (18) which is fixed to the upper end of the case (16) by suction. In this space (16), a large number of vertically moving elements (24) are arranged at predetermined intervals. In the state in which a wafer is held by suction by means of the chuck (18) and in which the chuck (18) is held in contact with the upper ends of the vertically moving elements (24) by supplying a vacuum pressure into the space, the vertically moving elements (24) located within a required range are selectively actuated. Thus, the chuck (18) is pushed up, and the wafer held on the chuck by the suction is transformed into a desired state.
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公开(公告)号：EP0298495A3
公开(公告)日：1989-09-27
申请号：EP88110937.5
申请日：1988-07-08
申请人： HITACHI, LTD.
发明人： Yamaguchi, Hiroshi , Saito, Keiya , Koizumi, Mitsuyoshi , Shimase, Akira , Haraichi, Satoshi , Miyauchi, Tateoki , Kuniyoshi, Shinji , Aiuchi, Susumu
IPC分类号： G03F1/00
摘要： The present invention relates to method and apparatus for correcting defects of an X-ray mask comprising the steps of: irradiating a focused ion beam to at least a region having a defective portion of an X-ray mask (200) having a protective film (204, 304) and eliminating the protective film; exposing a circuit pattern (205, 305) having a defective portion (150, 160) locating under the region or setting this circuit pattern to the state near the exposure; detecting at least one of the secondary electrons, secondary ions, reflected electrons, and absorbing current generated from that region and detecting a true defective position; positioning the focused ion beam to the true defective position and irradiating the focused ion beam to the defective portion; and thereby correcting the defect.
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公开(公告)号：EP0077559B1
公开(公告)日：1987-05-20
申请号：EP82109606.2
申请日：1982-10-18
申请人： Hitachi, Ltd.
IPC分类号： H01L21/68
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