公开(公告)号：EP0147776A3

公开(公告)日：1987-08-26

申请号：EP84115736

申请日：1984-12-18

申请人： HITACHI, LTD.

发明人： Yatsuo, Tsutomu ,  Nagano, Takahiro ,  Oikawa, Saburo ,  Sato, Yukimasa ,  Kimura, Shin ,  Fukui, Hirochi

IPC分类号： H01L29/60 ,  H01L29/10 ,  H01L29/08 ,  H01L29/74 ,  H01L29/72

CPC分类号： H01L29/744 ,  H01L29/0804 ,  H01L29/0834 ,  H01L29/0839 ,  H01L29/1004 ,  H01L29/102 ,  H01L29/167 ,  H01L29/32 ,  H01L29/42304 ,  H01L29/42308

摘要： A gate turn-off thyristor and a transistor are disclosed, each of which comprises: a semiconductor substrate (1,101) including at least three semiconductor layers between a pair of principal surfaces, adjacent ones of the semiconductor layers being different in conductivity type from each other, a first one of the semiconductor layers being formed of at least one strip-shaped region (20, 120) with a constant width, a second one (30, 130) of the semiconductor layers being exposed to a first principal surface of the semiconductor substrate together with the strip-shaped region; a first main electrode (2.102) kept in ohmic contact with the strip-shaped region at the first principal surface; a first control electrode (3a, 103a) kept in ohmic contact with the second semiconductor layer (30, 130) on one side of the strip-shaped region in the direction of the width thereof and connected directly to a control terminal (6, 106); a second control electrode (3b, 103b) kept in ohmic contact with the second semiconductor layer on the other side of the strip-shaped region in the direction of the width thereof and connected to the control terminal through the first control electrode and the resistance (R) of the second semiconductor layer between the first control electrode and the second control electrode; a second main electrode (4. 104) kept in ohmic contact with a second principal surface of the semiconductor substrate; and means provided in the semiconductor substrate for accelerating the spatial biasing of a conductive region to the other side of the strip-shaped region in the direction of the width thereof when a current flowing across the semiconductor substrate is cut off, thereby enlarging the area of safety operation.

公开(公告)号：EP0014080A1

公开(公告)日：1980-08-06

申请号：EP80300171.8

申请日：1980-01-18

申请人： Hitachi, Ltd.

发明人： Terasawa, Yoshio ,  Oikawa, Saburo

IPC分类号： H01L29/74

CPC分类号： H01L29/7392 ,  H01L29/0834 ,  H01L29/1025 ,  H01L29/1066

摘要： A semiconductor switch device comprising a semiconductor body (10), a pair of main electrodes (12,14) and a control electrode (13), the body consisting of a first region (20) of n +- type conductivity, a second region (15) of p +- type conductivity, both first and second regions being in contact with one main electrode (12), a third region (16) of n--type conductivity, a fourth region (17) of p-type conductivity, and a fifth region (19) of n-type conductivity, the fourth region being sandwiched between the third and fifth regions except in- the vicinity of the second region, said semiconductors regions thereby constituting a p-n junction diode and a bipolar transistor arranged adjacent each other within the semiconductor body (10) so that their conductive directions are equal. One electrode of the diode and an emitter (or collector) electrode of the transistor, and the other electrode of the diode and the collector (or emitter) electrode of the transistor are respectively formed continuously as the pair of main electrodes. Separately, a base electrode of the transistor is formed as the control electrode.
This semiconductor switch device has a higher breakdown voltage than a conventional transistor, and can control high power with low control power. It also has a shorter tum-ofttime than a conventional field controlled thyristor.

摘要翻译： 一种半导体开关器件，包括半导体本体（10），一对主电极（12,14）和控制电极（13），所述主体由n +型导电性的第一区域（20）， 第二区域（15）的p +型导电性，第一和第二区域都与一个主电极（12），n型导电性的第三区域（16），第四区域（17 ）和n型导电性的第五区域（19），第四区域夹在第三区域和第五区域之间，除了第二区域附近，所述半导体区域由此构成pn结二极管和 在半导体本体（10）内彼此相邻布置的双极晶体管，使得它们的导电方向相等。 二极管的一个电极和晶体管的发射极（或集电极）电极，二极管的另一个电极和晶体管的集电极（或发射极）电极分别连续地形成为一对主电极。 另外，晶体管的基极形成为控制电极。 该半导体开关器件具有比常规晶体管更高的击穿电压，并且可以以低控制功率来控制高功率。 与传统的场控晶闸管相比，它的关断时间也比较短。

公开(公告)号：EP0147776A2

公开(公告)日：1985-07-10

申请号：EP84115736.5

申请日：1984-12-18

申请人： HITACHI, LTD.

发明人： Yatsuo, Tsutomu ,  Nagano, Takahiro ,  Oikawa, Saburo ,  Sato, Yukimasa ,  Kimura, Shin ,  Fukui, Hirochi

IPC分类号： H01L29/60 ,  H01L29/10 ,  H01L29/08 ,  H01L29/74 ,  H01L29/72

CPC分类号： H01L29/744 ,  H01L29/0804 ,  H01L29/0834 ,  H01L29/0839 ,  H01L29/1004 ,  H01L29/102 ,  H01L29/167 ,  H01L29/32 ,  H01L29/42304 ,  H01L29/42308

摘要： A gate turn-off thyristor and a transistor are disclosed, each of which comprises: a semiconductor substrate (1,101) including at least three semiconductor layers between a pair of principal surfaces, adjacent ones of the semiconductor layers being different in conductivity type from each other, a first one of the semiconductor layers being formed of at least one strip-shaped region (20, 120) with a constant width, a second one (30, 130) of the semiconductor layers being exposed to a first principal surface of the semiconductor substrate together with the strip-shaped region; a first main electrode (2.102) kept in ohmic contact with the strip-shaped region at the first principal surface; a first control electrode (3a, 103a) kept in ohmic contact with the second semiconductor layer (30, 130) on one side of the strip-shaped region in the direction of the width thereof and connected directly to a control terminal (6, 106); a second control electrode (3b, 103b) kept in ohmic contact with the second semiconductor layer on the other side of the strip-shaped region in the direction of the width thereof and connected to the control terminal through the first control electrode and the resistance (R) of the second semiconductor layer between the first control electrode and the second control electrode; a second main electrode (4. 104) kept in ohmic contact with a second principal surface of the semiconductor substrate; and means provided in the semiconductor substrate for accelerating the spatial biasing of a conductive region to the other side of the strip-shaped region in the direction of the width thereof when a current flowing across the semiconductor substrate is cut off, thereby enlarging the area of safety operation.

公开(公告)号：EP0066721A3

公开(公告)日：1983-09-14

申请号：EP82104076

申请日：1982-05-11

申请人： Hitachi, Ltd.

发明人： Nagano, Takahiro ,  Yatsuo, Tsutomu ,  Oikawa, Saburo ,  Fukui, Hiroshi ,  Kimura, Shin

IPC分类号： H01L29/743 ,  H01L29/10 ,  H01L29/08

CPC分类号： H01L29/74 ,  H01L29/1016 ,  H01L29/744

摘要： A gate turn-off thyristor is disclosed, which comprises semiconductor substrate (1) in which a cathode emitter layer (5), a first base layer (4), a second base layer (3), and an anode emitter layer (2) are formed in this order such that pn junctions are made between respective adjacent ones of the layers. The cathode emitter layer (5) are divided into portions each of which is exposed at one of the main surfaces of the semiconductor substrate (1), the anode emitter layer (2) is exposed to the other main surface thereof, each of the separated cathode emitter layer portions (5) is made in low resistance contact with an anode electrode (7) and the second base layer (3) has a thickness W nB [pm] determined by the condition: or where V BO [V] is a breakover voltage.

公开(公告)号：EP0231895A3

公开(公告)日：1988-01-13

申请号：EP87101272

申请日：1987-01-30

申请人： HITACHI, LTD.

发明人： Satou, Yukimasa ,  Yatsuo, Tsutomu ,  Oikawa, Saburo ,  Sanpei, Isamu

IPC分类号： H01L29/10 ,  H01L29/74 ,  H01L29/08

CPC分类号： H01L29/744 ,  H01L29/102 ,  H01L29/7428

摘要： The present invention relates to a buried gate type gate turn-off thyristor. A low-resistance layer which is buried in a cathode base layer has a multiplicity of small bores below a cathode emitter layer. The distance between each pair of adjacent small bores and the thickness of the low-resistance layer are each set so as to be smaller than the carrier diffusion length in an anode base layer. In an on-state, carries flow through the low-resistance layer, thereby allowing the low-resistance layer to become conductive, and thus lowering the on-state voltage. A reduction in the dimension of the small bores lowers the resistance of the low-resistance layer and hence lowers the gate drawing out resistance, so that the interrupting capacity is improved. When gate turn-off thyristor is arranged so as to have an amplifying gate structure, the distance between each pair of adjacent small bores in the amplifying auxiliary thyristor section is set so as to be greater than the carrier diffusion length in the anode base layer. In consequence, the on-state voltage in the auxiliary thyristor section is increased, so that the current selectively flows through the main thyristor section, and the auxiliary thyristor section automatically turns off. Accordingly, when the thyristor is to be turned off, it suffices to turn off the main thyristor section alone.

公开(公告)号：EP0231895A2

公开(公告)日：1987-08-12

申请号：EP87101272.0

申请日：1987-01-30

申请人： HITACHI, LTD.

发明人： Satou, Yukimasa ,  Yatsuo, Tsutomu ,  Oikawa, Saburo ,  Sanpei, Isamu

IPC分类号： H01L29/10 ,  H01L29/74 ,  H01L29/08

CPC分类号： H01L29/744 ,  H01L29/102 ,  H01L29/7428

摘要： The present invention relates to a buried gate type gate turn-off thyristor. A low-resistance layer which is buried in a cathode base layer has a multiplicity of small bores below a cathode emitter layer. The distance between each pair of adjacent small bores and the thickness of the low-resistance layer are each set so as to be smaller than the carrier diffusion length in an anode base layer. In an on-state, carries flow through the low-resistance layer, thereby allowing the low-resistance layer to become conductive, and thus lowering the on-state voltage. A reduction in the dimension of the small bores lowers the resistance of the low-resistance layer and hence lowers the gate drawing out resistance, so that the interrupting capacity is improved. When gate turn-off thyristor is arranged so as to have an amplifying gate structure, the distance between each pair of adjacent small bores in the amplifying auxiliary thyristor section is set so as to be greater than the carrier diffusion length in the anode base layer. In consequence, the on-state voltage in the auxiliary thyristor section is increased, so that the current selectively flows through the main thyristor section, and the auxiliary thyristor section automatically turns off. Accordingly, when the thyristor is to be turned off, it suffices to turn off the main thyristor section alone.

公开(公告)号：EP0066721B1

公开(公告)日：1987-04-01

申请号：EP82104076.3

申请日：1982-05-11

申请人： Hitachi, Ltd.

发明人： Nagano, Takahiro ,  Yatsuo, Tsutomu ,  Oikawa, Saburo ,  Fukui, Hiroshi ,  Kimura, Shin

IPC分类号： H01L29/743 ,  H01L29/10 ,  H01L29/08

CPC分类号： H01L29/74 ,  H01L29/1016 ,  H01L29/744

公开(公告)号：EP0014080B1

公开(公告)日：1983-11-02

申请号：EP80300171.8

申请日：1980-01-18

申请人： Hitachi, Ltd.

发明人： Terasawa, Yoshio ,  Oikawa, Saburo

IPC分类号： H01L29/74

CPC分类号： H01L29/7392 ,  H01L29/0834 ,  H01L29/1025 ,  H01L29/1066

公开(公告)号：EP0178582A3

公开(公告)日：1989-02-08

申请号：EP85112805.8

申请日：1985-10-09

申请人： HITACHI, LTD.

发明人： Terasawa, Yoshio ,  Oikawa, Saburo

IPC分类号： H01L29/08 ,  H01L29/743

CPC分类号： H01L29/744 ,  H01L29/0688 ,  H01L29/0834 ,  H01L29/36

摘要： 57 A reverse blocking type semiconductor device capable of being rapidly turned off is disclosed in which a semiconductor substrate (1) includes four semiconductor layers (2, 3, 4, 5) in a region sandwiched between a pair of principal surfaces in such a manner that adjacent ones of these layers (2, 3, 4, 5) are different in conductivity type from each other, one outermost layer (5) of the layers (2, 3, 4, 5) is surrounded by the layer (4) adjacent to one outermost layer (5), one outermost layer (5) and the layer (4) adjacent thereto are exposed to one principal surface, a cathode electrode (7) is kept in low-resistance contact with one outermost layer (5), a gate electrode (8) is kept in low-resistance contact with the layer (4) adjacent to one outermost layer (5) and lies in close proximity to one outermost layer (5), an anode electrode (6) is kept in low-resistance contact with the other outermost layer (2) at the other principal surface, and a main operating region of the other outermost layer (2) has an impurity concentration gradient in a direction parallel to the anode electrode (6).

公开(公告)号：EP0178582A2

公开(公告)日：1986-04-23

申请号：EP85112805.8

申请日：1985-10-09

申请人： HITACHI, LTD.

发明人： Terasawa, Yoshio ,  Oikawa, Saburo

IPC分类号： H01L29/08 ,  H01L29/743

CPC分类号： H01L29/744 ,  H01L29/0688 ,  H01L29/0834 ,  H01L29/36

摘要： 57 A reverse blocking type semiconductor device capable of being rapidly turned off is disclosed in which a semiconductor substrate (1) includes four semiconductor layers (2, 3, 4, 5) in a region sandwiched between a pair of principal surfaces in such a manner that adjacent ones of these layers (2, 3, 4, 5) are different in conductivity type from each other, one outermost layer (5) of the layers (2, 3, 4, 5) is surrounded by the layer (4) adjacent to one outermost layer (5), one outermost layer (5) and the layer (4) adjacent thereto are exposed to one principal surface, a cathode electrode (7) is kept in low-resistance contact with one outermost layer (5), a gate electrode (8) is kept in low-resistance contact with the layer (4) adjacent to one outermost layer (5) and lies in close proximity to one outermost layer (5), an anode electrode (6) is kept in low-resistance contact with the other outermost layer (2) at the other principal surface, and a main operating region of the other outermost layer (2) has an impurity concentration gradient in a direction parallel to the anode electrode (6).