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公开(公告)号：EP3048611A1
公开(公告)日：2016-07-27
申请号：EP14856459.4
申请日：2014-10-21
发明人： LIN, Yinyin , WEI, Zhulin , ZHAO, Junfeng , YANG, Wei , FU, Yarong , YANG, Kai
IPC分类号： G11C11/02
CPC分类号： G11C19/0841 , G11C11/15 , G11C11/161 , G11C11/1675 , G11C19/0808
摘要： Embodiments of the present invention disclose a storage unit, a memory, and a method for controlling a storage unit, to increase storage density, and reduce power consumption and production costs. The storage unit includes: a comb-shaped magnetic track, a first drive circuit, a second drive circuit, a first drive port, and a second drive port, where the comb-shaped magnetic track includes a first storage area, a second storage area, and a comb handle, and the first storage area and the second storage area include more than two memory bars; by controlling input voltages of a first port, a second port, the first drive port, and the second drive port and driving the first drive circuit, a current pulse is generated in a memory bar in the first storage area, and a magnetic domain is driven to move; and by controlling the input voltages of the first port, the second port, the first drive port, and the second drive port and driving the second drive circuit, a current pulse is generated in a memory bar in the second storage area, and a magnetic domain is driven to move.
摘要翻译： 本发明的实施例公开了一种存储单元，存储器和用于控制存储单元的方法，以增加存储密度并降低功耗和生产成本。 所述存储单元包括：梳齿状磁轨，第一驱动电路，第二驱动电路，第一驱动端口和第二驱动端口，所述梳齿状磁轨包括第一存储区，第二存储区 和梳子手柄，并且第一存储区域和第二存储区域包括两个以上的存储条; 通过控制第一端口，第二端口，第一驱动端口和第二驱动端口的输入电压并驱动第一驱动电路，在第一存储区域中的存储条中产生电流脉冲，并且磁畴是 驱动移动; 并且通过控制第一端口，第二端口，第一驱动端口和第二驱动端口的输入电压并驱动第二驱动电路，在第二存储区域中的存储条中产生电流脉冲， 域被驱动移动。
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公开(公告)号：EP3136390B1
公开(公告)日：2018-11-28
申请号：EP15783125.6
申请日：2015-04-22
发明人： FU, Yarong , ZHAO, Junfeng , WANG, Yuangang , YANG, Wei , LIN, Yinyin , YANG, Kai
CPC分类号： G11C11/1675 , G11B5/012 , G11B5/653 , G11B5/656 , G11C11/16 , G11C19/0841
摘要： Embodiments of the present invention provide a write apparatus and a magnetic memory, where the write apparatus includes: a first drive port, a second drive port, a first information storage area, a second information storage area, and an information buffer, where there is a first area between the first information storage area and the information buffer, there is a second area between the second information storage area and the information buffer, the first information storage area, the second information storage area, and the information buffer are made of a first magnetic material, the first area and the second area are made of a second magnetic material, and magnetic energy of the first magnetic material is higher than magnetic energy of the second magnetic material; the first information storage area is configured to write first data to the information buffer; the second information storage area is configured to write second data to the information buffer; and the information buffer is configured to buffer data written from the first information storage area or the second information storage area, and write the buffered data to a magnetic domain of the magnetic memory, which can ensure write stability of the magnetic memory.
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3.发明公开
公开(公告)号：EP3220277A1
公开(公告)日：2017-09-20
申请号：EP15875107.3
申请日：2015-12-18
发明人： YANG, Renhua , ZHAO, Junfeng , YANG, Wei , WANG, Yuangang , LIN, Yinyin
IPC分类号： G06F13/28
CPC分类号： G06F12/0868 , G06F11/14 , G06F12/0246 , G06F12/0802 , G06F12/109 , G06F13/28 , G11C11/40615 , G11C11/40622 , Y02D10/13 , Y02D10/14 , Y02D10/151
摘要： Embodiments of the present invention provide a memory access method, a storage-class memory, and a computer system. The computer system includes a memory controller and a hybrid memory, and the hybrid memory includes a dynamic random access memory DRAM and a storage-class memory SCM. The memory controller is configured to send a first access instruction to the DRAM and the SCM. When determining that a first memory cell set that is of the DRAM and to which a first address in the received first access instruction points includes a memory cell whose retention time is shorter than a refresh cycle of the DRAM, the SCM may obtain a second address having a mapping relationship with the first address. Further, the SCM converts, according to the second address, the first access instruction into a second access instruction for accessing the SCM, to implement access to the SCM. The computer system provided in the embodiments of the present invention can ensure correctness of data while reducing power consumption for DRAM refresh.
摘要翻译： 本发明的实施例提供一种存储器存取方法，存储级存储器和计算机系统。 计算机系统包括存储器控制器和混合存储器，并且混合存储器包括动态随机存取存储器DRAM和存储级存储器SCM。 存储器控制器被配置为向DRAM和SCM发送第一访问指令。 当确定DRAM的第一存储单元组和第一存取指令点中的第一地址包括保持时间短于DRAM的刷新周期的存储单元时，SCM可以获得第二地址 与第一地址具有映射关系。 进一步地，SCM根据第二地址将第一访问指令转换为访问SCM的第二访问指令，以实现对SCM的访问。 本发明实施例提供的计算机系统可以保证数据的正确性，同时降低DRAM刷新的功耗。
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公开(公告)号：EP3040994B1
公开(公告)日：2018-03-07
申请号：EP14847885.2
申请日：2014-09-24
发明人： LIN, Yinyin , FU, Yarong , YANG, Kai , YANG, Wei , WANG, Yuangang , ZHAO, Junfeng
CPC分类号： G11B5/09 , G11B5/02 , G11B2005/0002 , G11C11/02 , G11C11/15 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/5607 , G11C19/0808 , G11C19/0841
摘要： Embodiments of the present invention provide an information storage apparatus and method, and the apparatus includes: a magnetic track, where the magnetic track consists of multiple magnetic domains, and each magnetic domain is divided into at least two magnetic regions; a writing unit, disposed on the magnetic track, where information is written to the at least two magnetic regions of each magnetic domain by the writing unit; and a reading unit, disposed on the magnetic track, where the information written to the at least two magnetic regions is read by the reading unit; therefore, multiple pieces of valid information are written to one magnetic domain of the magnetic track, which increases storage density of the magnetic track, and expands a storage capacity of the storage apparatus.
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公开(公告)号：EP3136390A1
公开(公告)日：2017-03-01
申请号：EP15783125.6
申请日：2015-04-22
发明人： FU, Yarong , ZHAO, Junfeng , WANG, Yuangang , YANG, Wei , LIN, Yinyin , YANG, Kai
IPC分类号： G11B5/012
CPC分类号： G11C11/1675 , G11B5/012 , G11B5/653 , G11B5/656 , G11C11/16 , G11C19/0841
摘要： Embodiments of the present invention provide a write apparatus and a magnetic memory, where the write apparatus includes: a first drive port, a second drive port, a first information storage area, a second information storage area, and an information buffer, where there is a first area between the first information storage area and the information buffer, there is a second area between the second information storage area and the information buffer, the first information storage area, the second information storage area, and the information buffer are made of a first magnetic material, the first area and the second area are made of a second magnetic material, and magnetic energy of the first magnetic material is higher than magnetic energy of the second magnetic material; the first information storage area is configured to write first data to the information buffer; the second information storage area is configured to write second data to the information buffer; and the information buffer is configured to buffer data written from the first information storage area or the second information storage area, and write the buffered data to a magnetic domain of the magnetic memory, which can ensure write stability of the magnetic memory.
摘要翻译： 本发明的实施例提供一种写入装置和磁性存储器，其中写入装置包括：第一驱动端口，第二驱动端口，第一信息存储区域，第二信息存储区域和信息缓冲区，其中存在 在第一信息存储区域和信息缓冲区之间的第一区域中，在第二信息存储区域和信息缓冲区之间存在第二区域，第一信息存储区域，第二信息存储区域和信息缓冲区由 第一磁性材料，第一区域和第二区域由第二磁性材料制成，并且第一磁性材料的磁能高于第二磁性材料的磁能; 所述第一信息存储区域被配置为将第一数据写入所述信息缓冲器; 第二信息存储区域被配置为将第二数据写入信息缓冲器; 信息缓冲器用于缓存从第一信息存储区或第二信息存储区写入的数据，并将缓存的数据写入磁存储器的磁畴，可以保证磁存储器的写入稳定性。
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公开(公告)号：EP3051536A1
公开(公告)日：2016-08-03
申请号：EP14856096.4
申请日：2014-10-15
发明人： LIN, Yinyin , WEI, Zhulin , ZHAO, Junfeng , YANG, Wei , FU, Yarong , YANG, Kai
IPC分类号： G11C11/02
CPC分类号： G06F3/0625 , G06F3/0658 , G06F3/0676 , G11C8/16 , G11C11/161 , G11C11/1675 , G11C19/0808 , G11C19/0841
摘要： Embodiments of the present invention provide a storage unit, a memory, and a method for controlling a storage unit, to increase storage density and reduce power consumption. The storage unit includes: a U-shaped magnetic track, a first drive circuit, a second drive circuit, a first drive port, and a second drive port, where the U-shaped magnetic track includes a first port, a second port, a first storage area, and a second storage area; the first drive circuit is configured to drive the first storage area, and the second drive circuit is configured to drive the second storage area; by controlling input voltages of the first port, the second port, the first drive port, and the second drive port and driving the first drive circuit, a current pulse is generated in the first storage area, and a magnetic domain in the first storage area is driven to move; and by controlling the input voltages of the first port, the second port, the first drive port, and the second drive port and driving the second drive circuit, a current pulse is generated in the second storage area, and a magnetic domain in the second storage area is driven to move.
摘要翻译： 本发明的实施例提供一种存储单元，存储器以及用于控制存储单元的方法，以增加存储密度并降低功耗。 所述存储单元包括：U形磁道，第一驱动电路，第二驱动电路，第一驱动端口和第二驱动端口，所述U形磁道包括第一端口，第二端口， 第一存储区域和第二存储区域; 所述第一驱动电路用于驱动所述第一存储区域，所述第二驱动电路用于驱动所述第二存储区域; 通过控制第一端口，第二端口，第一驱动端口和第二驱动端口的输入电压并驱动第一驱动电路，在第一存储区域中产生电流脉冲，并且第一存储区域中的磁畴 被驱动移动; 并且通过控制第一端口，第二端口，第一驱动端口和第二驱动端口的输入电压并驱动第二驱动电路，在第二存储区域中产生电流脉冲，并且在第二存储区域中产生磁畴 存储区域被驱动移动。
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公开(公告)号：EP3040994A1
公开(公告)日：2016-07-06
申请号：EP14847885.2
申请日：2014-09-24
发明人： LIN, Yinyin , FU, Yarong , YANG, Kai , YANG, Wei , WANG, Yuangang , ZHAO, Junfeng
IPC分类号： G11B5/39
CPC分类号： G11B5/09 , G11B5/02 , G11B2005/0002 , G11C11/02 , G11C11/15 , G11C11/161 , G11C11/1673 , G11C11/1675 , G11C11/5607 , G11C19/0808 , G11C19/0841
摘要： Embodiments of the present invention provide an information storage apparatus and method, and the apparatus includes: a magnetic track, where the magnetic track consists of multiple magnetic domains, and each magnetic domain is divided into at least two magnetic regions; a writing unit, disposed on the magnetic track, where information is written to the at least two magnetic regions of each magnetic domain by the writing unit; and a reading unit, disposed on the magnetic track, where the information written to the at least two magnetic regions is read by the reading unit; therefore, multiple pieces of valid information are written to one magnetic domain of the magnetic track, which increases storage density of the magnetic track, and expands a storage capacity of the storage apparatus.
摘要翻译： 本发明的实施例提供一种信息存储装置和方法，该装置包括：磁轨，其中磁道由多个磁畴组成，每个磁畴被分成至少两个磁区; 写入单元，设置在磁道上，其中通过写入单元将信息写入每个磁畴的至少两个磁性区域; 以及读取单元，设置在所述磁道上，所述读取单元读取写入所述至少两个磁性区域的信息; 因此，将多条有效信息写入磁道的一个磁畴，这增加磁道的存储密度，并扩大存储装置的存储容量。
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