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1.发明公开STRUCTURE AND METHOD FOR MOBILITY ENHANCED MOSFETS WITH UNALLOYED SILICIDE 审中-公开结构和移动性的MOSFET高级程序，硅化碳
公开(公告)号：EP2108192A4
公开(公告)日：2009-12-30
申请号：EP07855285
申请日：2007-12-20
Applicant: IBM
Inventor： LIU YAOCHANG , CHIDAMBARRAO DURESETI , RIM KERN , GLUSCHENKOV OLEG , MO RENEE T , HOLT JUDSON R
IPC: H01L27/10 , H01L21/336 , H01L21/82 , H01L21/8238 , H01L29/78
CPC classification number: H01L21/823864 , H01L21/76886 , H01L21/823807 , H01L21/823814 , H01L21/84 , H01L27/1203 , H01L27/3279 , H01L29/165 , H01L29/665 , H01L29/6656 , H01L29/66628 , H01L29/66636 , H01L29/7848
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2.发明公开RAISED STI STRUCTURE AND SUPERDAMASCENE TECHNIQUE FOR NMOSFET PERFORMANCE ENHANCEMENT WITH EMBEDDED SILICON CARBON 有权升高的STI结构和SUPERDAMASZEN技术，提供更好NMOSFET LESITUNG具有嵌入式硅碳棒
公开(公告)号：EP2050128A4
公开(公告)日：2009-12-23
申请号：EP07813250
申请日：2007-07-24
Applicant: IBM
Inventor： CHAKRAVARTI ASHIMA B , CHIDAMBARRAO DURESETI , HOLT JUDSON R , LIU YAOCHENG , RIM KERN
IPC: H01L21/336 , H01L21/762 , H01L21/8238
CPC classification number: H01L21/823864 , H01L21/76224 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L29/165 , H01L29/66628 , H01L29/7843 , H01L29/7848
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