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1.发明公开STRUCTURE AND METHOD FOR MOBILITY ENHANCED MOSFETS WITH UNALLOYED SILICIDE 审中-公开结构和移动性的MOSFET高级程序，硅化碳
公开(公告)号：EP2108192A4
公开(公告)日：2009-12-30
申请号：EP07855285
申请日：2007-12-20
Applicant: IBM
Inventor： LIU YAOCHANG , CHIDAMBARRAO DURESETI , RIM KERN , GLUSCHENKOV OLEG , MO RENEE T , HOLT JUDSON R
IPC: H01L27/10 , H01L21/336 , H01L21/82 , H01L21/8238 , H01L29/78
CPC classification number: H01L21/823864 , H01L21/76886 , H01L21/823807 , H01L21/823814 , H01L21/84 , H01L27/1203 , H01L27/3279 , H01L29/165 , H01L29/665 , H01L29/6656 , H01L29/66628 , H01L29/66636 , H01L29/7848
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公开(公告)号：EP2396812A4
公开(公告)日：2012-08-01
申请号：EP10767544
申请日：2010-04-15
Applicant: IBM
Inventor： CHANG JOSEPHINE B , CHANG LELAND , MO RENEE T , NARAYANAN VIJAY , SLEIGHT JEFFREY W
IPC: H01L21/336 , H01L29/78
CPC classification number: H01L29/7856 , H01L29/66795
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3.发明公开METHOD AND STRUCTURE FOR THRESHOLD VOLTAGE CONTROL AND DRIVE CURRENT IMPROVEMENT FOR HIGH-K METAL GATE TRANSISTORS 审中-公开方法与结构新兴力量管理和控制电源优化中具有高介电常数金属栅极晶体管
公开(公告)号：EP2415073A4
公开(公告)日：2013-09-11
申请号：EP10759255
申请日：2010-03-29
Applicant: IBM
Inventor： BU HUIMING , CHUDZIK MICHAEL P , HE WEI , JHA RASHMI , KIM YOUNG-HEE , KRISHNAN SIDDARTH A , MO RENEE T , MOUMEN NAIM , NATZLE WESLEY C
IPC: H01L29/51 , H01L21/28 , H01L21/336 , H01L29/49
CPC classification number: H01L21/28202 , H01L21/28176 , H01L21/28185 , H01L29/495 , H01L29/4966 , H01L29/513 , H01L29/517 , H01L2924/0002 , H01L2924/00
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公开(公告)号：EP2022085A4
公开(公告)日：2011-08-03
申请号：EP07755161
申请日：2007-04-10
Applicant: IBM
Inventor： FANG SUNFEI , KNARR RANDOLPH F , KRISHNAN MAHADEVAIYER , LAVOIE CHRISTIAN , MO RENEE T , PRANATHARTHIHARAN BALASUBRAMANIAN , STRANE JAY W
IPC: H01L21/285 , H01L21/3213
CPC classification number: H01L21/28518 , C23F1/28 , C23F1/30 , C23F1/44
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