-
公开(公告)号：EP2087521A4
公开(公告)日：2011-11-09
申请号：EP07853897
申请日：2007-10-10
Applicant: IBM
Inventor： LIU YAOCHENG , IYER SUBRAMANIAN , LI JINGHONG
IPC: H01L29/161 , H01L21/265 , H01L29/10 , H01L29/786
CPC classification number: H01L29/1054 , H01L21/2022 , H01L21/26506 , H01L29/32 , H01L29/7848 , H01L29/78618 , H01L29/78654 , H01L29/78696
-
2.发明公开RAISED STI STRUCTURE AND SUPERDAMASCENE TECHNIQUE FOR NMOSFET PERFORMANCE ENHANCEMENT WITH EMBEDDED SILICON CARBON 有权升高的STI结构和SUPERDAMASZEN技术，提供更好NMOSFET LESITUNG具有嵌入式硅碳棒
公开(公告)号：EP2050128A4
公开(公告)日：2009-12-23
申请号：EP07813250
申请日：2007-07-24
Applicant: IBM
Inventor： CHAKRAVARTI ASHIMA B , CHIDAMBARRAO DURESETI , HOLT JUDSON R , LIU YAOCHENG , RIM KERN
IPC: H01L21/336 , H01L21/762 , H01L21/8238
CPC classification number: H01L21/823864 , H01L21/76224 , H01L21/823807 , H01L21/823814 , H01L21/823878 , H01L29/165 , H01L29/66628 , H01L29/7843 , H01L29/7848
-
3.发明公开N-CHANNEL MOSFETS COMPRISING DUAL STRESSORS, AND METHODS FOR FORMING THE SAME 有权N沟道MOSFET与DOPPELSTRESSOREN及其制造方法
公开(公告)号：EP2036130A4
公开(公告)日：2009-12-23
申请号：EP07797521
申请日：2007-05-17
Applicant: IBM
Inventor： LI JINGHONG H , LIU YAOCHENG , LUO ZHIJIONG , MADAN ANITA , ROVEDO NIVO
IPC: H01L29/76
CPC classification number: H01L21/823814 , H01L21/26506 , H01L21/324 , H01L21/823807 , H01L29/665 , H01L29/6656 , H01L29/6659 , H01L29/66636 , H01L29/7833 , H01L29/7848 , Y10S257/90
-
-
Search Results
3
records
(took 0.006 seconds)
