公开(公告)号：EP1620891A4

公开(公告)日：2007-03-28

申请号：EP04707026

申请日：2004-01-30

Applicant: IBM

Inventor： RAINEY BETH ANN ,  NOWAK EDWARD J ,  ALLER INGO DR ,  KEINERT JOACHIM ,  LUDWIG THOMAS

IPC: H01L21/84 ,  H01L21/336 ,  H01L21/8238 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786

CPC classification number: H01L29/785 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/045 ,  H01L29/66795

Abstract: The present invention provides a FinFET device that has a first fin and a second fin. Each fin has a channel region and source and drain regions that extend from the channel region. The fins have different heights. The invention has a gate conductor positioned adjacent the fins. The gate conductor runs perpendicular to the fins and crosses the channel region of each of the first fin and second fin. The fins are parallel to one another. The ratio of the height of the first fin to the height of the second fin comprises a ratio of one to 2/3. The ratio is used to tune the performance of the transistor and determines the total channel width of the transistor.

公开(公告)号：EP1532659A4

公开(公告)日：2005-12-14

申请号：EP03736783

申请日：2003-06-03

Applicant: IBM

Inventor： FRIED DAVID M ,  NOWAK EDWARD J ,  RAINEY BETH ANN ,  SADANA DEVENDRA K

IPC: H01L27/088 ,  H01L21/265 ,  H01L21/336 ,  H01L21/8234 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/786 ,  H01L21/00

CPC classification number: H01L29/7851 ,  H01L21/823828 ,  H01L29/66795 ,  H01L29/66818 ,  H01L29/7853

Abstract: The present invention thus provides a device structure and method for forming fin (210) Field Effect Transistors (FETs) from bulk semiconductor wafers (200) while providing improved wafer to wafer device uniformity. Specifically, the invention provides a height control layer (212), such as a damaged portion of the substrate (200) or a marker layer, which provides uniformity of fin height. Additionally, the invention provides provides isolation (214) between fins (210) which also provides for optimization and narrowing of fin width by selective oxidation of a portion (212) of the substrate relative to an oxidized portion (216) of the fin sidewalk. The device structure and methods of the present invention thus provide the advantages of uniform finFET fabrication while using cost effect bulk wafers.