公开(公告)号：EP2020023A4

公开(公告)日：2012-09-19

申请号：EP07761307

申请日：2007-04-26

Applicant: IBM

Inventor： FAROOQ MUKTA G ,  DAUBENSPECK TIMOTHY H ,  SAUTER WOLFGANG ,  GAMBINO JEFFREY P ,  MUZZY CHRISTOPHER D ,  PETRARCA KEVIN S

IPC: H01L21/44

CPC classification number: H01L24/03 ,  H01L23/3192 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02125 ,  H01L2224/034 ,  H01L2224/03616 ,  H01L2224/0391 ,  H01L2224/0401 ,  H01L2224/05006 ,  H01L2224/05018 ,  H01L2224/05027 ,  H01L2224/05083 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/0517 ,  H01L2224/05171 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05546 ,  H01L2224/05559 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/05671 ,  H01L2224/113 ,  H01L2224/11334 ,  H01L2224/1147 ,  H01L2224/1148 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/11902 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/0002 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/30107 ,  H01L2924/00014 ,  H01L2924/01007 ,  H01L2924/00015 ,  H01L2924/00011 ,  H01L2924/00012 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552 ,  H01L2924/00

Abstract: A method for forming preferably Pb-lead C4 connections or capture pads with ball limiting metallization on an integrated circuit chip by using a damascene process and preferably Cu metallization in the chip and in the ball limiting metallization for compatibility. In two one embodiment, the capture pad is formed in the top insulating layer and it also serves as the final level of metallization in the chip.