公开(公告)号：EP3381510A1

公开(公告)日：2018-10-03

申请号：EP18164307.3

申请日：2018-03-27

Applicant: Greatbatch Ltd.

Inventor： SEITZ, Keith W. ,  TANG, Xiaohong ,  THIEBOLT, William C. ,  CALAMEL, Jonathan ,  SHI, Thomas ,  MARZANO, Thomas

IPC: A61N1/375

CPC classification number: A61N1/3754 ,  C03C8/14 ,  C04B2237/343 ,  C04B2237/348 ,  C04B2237/361 ,  C04B2237/363 ,  C04B2237/365 ,  C04B2237/403 ,  C04B2237/408 ,  H01L23/10 ,  H01L23/15 ,  H01L24/26 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01044 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01073 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/09701 ,  H05K1/0306 ,  H05K3/0047 ,  H05K5/0095

Abstract: Electrically conductive and hermetic vias are disposed within a flexible insulator substrate of a feedthrough assembly to provide miniaturization of feedthrough assemblies inasmuch as the feedthrough components are capable of supporting very small and hermetic conductively filled via holes in the absence of additional components, such as, for example, terminal pins, leadwires, and the like.

公开(公告)号：EP2571050A4

公开(公告)日：2017-10-04

申请号：EP10851396

申请日：2010-05-12

Applicant: TOYOTA MOTOR CO LTD

Inventor： OHNO HIROTAKA

IPC: H01L23/36 ,  C23C24/04 ,  H01L23/373

CPC classification number: H01L24/04 ,  C23C24/04 ,  H01L23/047 ,  H01L23/3142 ,  H01L23/36 ,  H01L23/4334 ,  H01L23/492 ,  H01L23/49517 ,  H01L24/32 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/743 ,  H01L2224/32245 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/13055 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: Disclosed is a semiconductor device (1) having improved heat dissipation performance. The semiconductor device is formed by molding using a resin (10) with a semiconductor element (11) and one or two heat dissipating plates (12, 13) contained therein, said one or two heat dissipating plates being disposed to face one surface or both the surfaces of the semiconductor element (11). An intermediate layer (14) is formed by spraying a metal powder to the semiconductor element (11) and to one of or both of the heat dissipating plates (12, 13) using a cold spray method, and the semiconductor element (11) and the heat dissipating plate (12) are bonded together using a solder (15) with the intermediate layer (14) therebetween.

Abstract translation: 公开了一种具有改进的散热性能的半导体器件（1）。 半导体器件通过使用具有半导体元件（11）和包含在其中的一个或两个散热板（12,13）的树脂（10）进行模制而形成，所述一个或两个散热板布置成面对一个表面或两者 半导体元件（11）的表面。 中间层（14）通过使用冷喷涂方法将金属粉末喷射到半导体元件（11）和散热板（12,13）中的一个或两个上而形成，并且半导体元件（11）和 使用焊料（15）将散热板（12）与中间层（14）夹在中间。

公开(公告)号：EP2490251B1

公开(公告)日：2017-08-23

申请号：EP09850414.5

申请日：2009-10-16

Applicant: LG Chem, Ltd.

Inventor： JOO, Hyo Sook ,  CHANG, Suk Ky ,  PARK, Hyo Soon ,  HONG, Jong Wan ,  CHO, Hyun Ju ,  KIM, Jang Soon ,  PARK, Yong Su

IPC: H01L21/58

CPC classification number: H01L24/83 ,  C08G2650/40 ,  C08L71/00 ,  C08L79/08 ,  C08L81/06 ,  C09J7/20 ,  C09J163/00 ,  C09J2201/36 ,  C09J2201/606 ,  C09J2201/61 ,  C09J2203/326 ,  C09J2463/00 ,  H01L21/6836 ,  H01L24/29 ,  H01L24/85 ,  H01L2221/68327 ,  H01L2224/27436 ,  H01L2224/2919 ,  H01L2224/451 ,  H01L2224/83191 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/0106 ,  H01L2924/01082 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/181 ,  Y10T428/24959 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2224/45099

Abstract: Provided are a die attach film, a semiconductor wafer, and a semiconductor packaging method. The die attach film can prevent generation of burrs or scattering of chips in a dicing process, and exhibits excellent expandability and pick-up characteristics in a die pressure-sensitive adhesive process. Further, the die attach film can prevent release, shifting, or deflection of a chip in a wire pressure-sensitive adhesive or molding process. Thus, it is possible to improve embeddability, inhibit warpage of a wafer or wiring substrate, and enhance productivity in a semiconductor packaging process.

Abstract translation: 提供芯片贴装膜，半导体晶片和半导体封装方法。 芯片贴装膜可以防止在切割工艺中产生毛刺或碎片飞散，并且在模具压敏粘合剂工艺中展现优异的可扩展性和拾取特性。 此外，芯片贴装膜可以防止芯线在线压敏粘合剂或模制工艺中的释放，移动或偏转。 因此，可以提高嵌入性，抑制晶片或布线基板的翘曲，并提高半导体封装工艺中的生产率。

公开(公告)号：EP3163602A3

公开(公告)日：2017-08-09

申请号：EP16002297.6

申请日：2010-01-20

Applicant: Nichia Corporation

Inventor： Kuramoto, Masafumi ,  Ogawa, Satoru ,  Niwa, Miki

IPC: H01L21/58 ,  H01L21/60 ,  H01L33/40 ,  H01L33/48 ,  H01L33/62 ,  H01S5/022

CPC classification number: H01L33/44 ,  H01L23/08 ,  H01L23/293 ,  H01L23/49579 ,  H01L23/49582 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2712 ,  H01L2224/2745 ,  H01L2224/275 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73265 ,  H01L2224/83048 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83207 ,  H01L2224/83439 ,  H01L2224/83487 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0541 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/201 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/3025 ,  H01L2933/0066 ,  H01S5/0226 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2224/05599

Abstract: An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. Disclosed is a method for producing a semiconductor device in which silver (520, 620, 720) formed by silver sputtering, silver vapour deposition or silver plating and provided on a surface of a base (500, 600, 700) and silver (140, 240, 340) formed by silver sputtering, silver vapour deposition or silver plating and provided on a surface of a semiconductor element (100, 200, 300) are bonded, the method comprising the steps of arranging the semiconductor element (100, 200, 300) on the base (500, 600, 700) such that said silver (140, 240, 340) provided on a surface of the semiconductor element (100, 200, 300) is in contact with said silver (520, 620, 720) provided on a surface of the base (500, 600, 700), temporarily bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying a pressure or an ultrasonic vibration to the semiconductor element (100, 200, 300) or the base (500, 600, 700), and permanently bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying heat having a temperature of 150 to 900°C to the semiconductor element (100, 200, 300) and the base (500, 600, 700) in air or in an oxygen environment. The step of temporarily bonding and the step of permanently bonding may be performed simultaneously. The semiconductor element (100, 200, 300) and the base (500, 600, 700) may be heated in advance at 150 to 900°C before the step of temporarily bonding. A pressure of 5 to 50 MPa may be applied before the step of temporarily bonding. The semiconductor element (100, 200, 300) may be a light emitting semiconductor element.

Abstract translation: 本发明的目的是提供一种制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定导电材料组合物获得导电构件。 本发明公开了一种用于制造半导体器件的方法，其中通过银溅射，银气相沉积或镀银形成并设置在基底（500,600,700）和银（140,160）的表面上的银（520,620,720） （100,200,300）的表面上通过银溅射，银气相沉积或镀银形成的半导体元件（100,200,300）的方法包括以下步骤：将半导体元件（100,200,300） ）设置在所述基座（500,600,700）上，使得设置在所述半导体元件（100,200,300）的表面上的所述银（140,240,340）与所述银（520,620,720）接触， 设置在所述基座（500,600,700）的表面上，通过对所述半导体元件（500,600,700）施加压力或超声波振动来暂时接合所述半导体元件（100,200,300）和所述基座（500,600,700） （100,200,300）或所述基座（500,600,700）之间，并且永久地将所述半导体元件（100,200,300）和所述半导体元件 通过在空气中或在氧气环境中向半导体元件（100,200,300）和基座（500,600,700）施加具有150至900℃的温度的热量，从而在基座（500,600,700）上形成基座（500,600,700）。 暂时键合的步骤和永久键合的步骤可以同时进行。 在临时键合步骤之前，半导体元件（100,200,300）和基座（500,600,700）可预先在150至900℃加热。 临时粘合步骤之前可施加5至50MPa的压力。 半导体元件（100,200,300）可以是发光半导体元件。

公开(公告)号：EP3151268A3

公开(公告)日：2017-08-09

申请号：EP16002295.0

申请日：2010-01-20

Applicant: Nichia Corporation

Inventor： Kuramoto, Masafumi ,  Ogawa, Satoru ,  Niwa, Miki

IPC: H01L21/58 ,  H01L21/60 ,  H01L33/40 ,  H01L33/48 ,  H01L33/62 ,  H01S5/022

CPC classification number: H01L33/44 ,  H01L23/08 ,  H01L23/293 ,  H01L23/49579 ,  H01L23/49582 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2712 ,  H01L2224/2745 ,  H01L2224/275 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73265 ,  H01L2224/83048 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83207 ,  H01L2224/83439 ,  H01L2224/83487 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0541 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/201 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/3025 ,  H01L2933/0066 ,  H01S5/0226 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2224/05599

Abstract: An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. Disclosed is a method for producing a semiconductor device in which silver or silver oxide (520, 620, 720) provided on a surface of a base (500, 600, 700) and silver oxide (140, 240, 340) provided on a surface of a semiconductor element (100, 200, 300) are bonded, the method including the steps of arranging a semiconductor element (100, 200, 300) on a base (500, 600, 700) such that silver oxide (140, 240, 340) provided on a surface of the semiconductor element (100, 200, 300) is in contact with silver or silver oxide (520, 620, 720) provided on a surface of the base (500, 600, 700), temporarily bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying a pressure or an ultrasonic vibration to the semiconductor element (100, 200, 300) or the base (500, 600, 700), and permanently bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying heat having a temperature of 150 to 900°C to the semiconductor element (100, 200, 300) and the base (500, 600, 700). The step of temporarily bonding and the step of permanently bonding may be performed simultaneously. The step of permanently bonding may be performed in air or in an oxygen environment, or in a nitrogen environment. The semiconductor element (100, 200, 300) and the base (500, 600, 700) may be heated in advance at 150 to 900°C before the step of temporarily bonding. A pressure of 5 to 50 MPa may be applied before the step of temporarily bonding. The semiconductor element (100, 200, 300) may be a light emitting semiconductor element.

Abstract translation: 本发明的目的是提供一种制造具有低电阻的导电构件的方法，并且使用不含粘合剂的低成本稳定导电材料组合物获得导电构件。 公开了一种用于制造半导体器件的方法，其中在基体（500,600,700）的表面上提供的银或氧化银（520,620,720）和在表面上提供的氧化银（140,240,340） 的半导体元件（100,200,300）接合，所述方法包括以下步骤：在基座（500,600,700）上布置半导体元件（100,200,300），使得氧化银（140,240,340） 设置在半导体元件（100,200,300）的表面上的银或氧化银（520,620,720）与设置在基部（500,600,700）的表面上的银或氧化银（520,620,720）接触， 通过对所述半导体元件（100,200,300）或所述基座（500,600,700）施加压力或超声波振动来对所述半导体元件（100,200,300）和所述基座（500,600,700）进行加热，以及 通过向半导体元件（100,200,300）施加温度为150至900℃的热量来永久地结合半导体元件（100,200,300）和基座（500,600,700） 和底座（500,600,700）。 暂时键合的步骤和永久键合的步骤可以同时进行。 永久结合的步骤可以在空气中或氧气环境中或在氮气环境中进行。 在临时键合步骤之前，半导体元件（100,200,300）和基座（500,600,700）可预先在150至900℃加热。 临时粘合步骤之前可施加5至50MPa的压力。 半导体元件（100,200,300）可以是发光半导体元件。

公开(公告)号：EP3163601A2

公开(公告)日：2017-05-03

申请号：EP16002296

申请日：2010-01-20

Applicant: NICHIA CORP

Inventor： KURAMOTO MASAFUMI ,  OGAWA SATORU ,  NIWA MIKI

IPC: H01L21/58 ,  H01L21/60 ,  H01L33/40 ,  H01L33/48 ,  H01L33/62 ,  H01S5/022

CPC classification number: H01L33/44 ,  H01L23/08 ,  H01L23/293 ,  H01L23/49579 ,  H01L23/49582 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/83 ,  H01L33/62 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/2712 ,  H01L2224/2745 ,  H01L2224/275 ,  H01L2224/29023 ,  H01L2224/2908 ,  H01L2224/29083 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29139 ,  H01L2224/29187 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/73265 ,  H01L2224/83048 ,  H01L2224/83055 ,  H01L2224/83075 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/83205 ,  H01L2224/83207 ,  H01L2224/83439 ,  H01L2224/83487 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01063 ,  H01L2924/01064 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0541 ,  H01L2924/0665 ,  H01L2924/09701 ,  H01L2924/12035 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/1576 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19043 ,  H01L2924/201 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/2011 ,  H01L2924/20111 ,  H01L2924/3025 ,  H01L2933/0066 ,  H01S5/0226 ,  H01L2924/00015 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/48 ,  H01L2224/05599

Abstract: An object of the invention is to provide a method for producing a conductive member having low electrical resistance, and the conductive member is obtained using a low-cost stable conductive material composition that does not contain an adhesive. Disclosed is a method for producing a semiconductor device in which silver oxide (520, 620, 720) provided on a surface of a base (500, 600, 700) and silver or silver oxide (140, 240, 340) provided on a surface of a semiconductor element (100, 200, 300) are bonded, the method including the steps of arranging a semiconductor element (100, 200, 300) on a base (500, 600, 700) such that silver or silver oxide (140, 240, 340) provided on a surface of the semiconductor element (100, 200, 300) is in contact with silver oxide (520, 620, 720) provided on a surface of the base (500, 600, 700), temporarily bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying a pressure or an ultrasonic vibration to the semiconductor element (100, 200, 300) or the base (500, 600, 700), and permanently bonding the semiconductor element (100, 200, 300) and the base (500, 600, 700) by applying heat having a temperature of 150 to 900°C to the semiconductor element (100, 200, 300) and the base (500, 600, 700). The step of temporarily bonding and the step of permanently bonding may be performed simultaneously. The step of permanently bonding may be performed in air or in an oxygen environment, or in a nitrogen environment. The semiconductor element (100, 200, 300) and the base (500, 600, 700) may be heated in advance at 150 to 900°C before the step of temporarily bonding. A pressure of 5 to 50 MPa may be applied in the step of temporarily bonding. The semiconductor element (100, 200, 300) may be a light emitting semiconductor element.

Abstract translation: 本发明的一个目的是提供一种用于生产具有低电阻的导电性构件的方法，所述导电构件是用一种低成本的稳定的导电材料组合物并不含有获得，在粘接剂。 是（340 140，240）的表面上设置用于在其中氧化银（520，620，720）的半导体器件提供了一种基站（500，600，700），并且银或氧化银的表面上的方法公开 的半导体元件（100，200，300）键合的，该方法包括在基体上布置的半导体元件（100，200，300）的步骤（500，600，700）检测没有银或氧化银（140， 设置在半导体元件（100，200,300）的表面上的240，340）与设置在基座（500，600，700的表面上的氧化银（520，620，720）接触），暂时接合 半导体元件（100，200，300）和基部（500，600，700）通过施加到所述半导体元件（100，200，300）或所述基部（500，600,700）的压力或超声波振动，和 半导体元件（100，200，300）和基部（500，600，700）通过施加具有150至900℃的温度下对半导体元件的热永久地结合（100，200，300） 和所述基部（500，600，700）。 的暂时接合步骤和永久地结合的步骤可以同时进行。 永久接合的步骤可以在空气中或在氧气中进行，以环境，或在氮气环境中。 半导体元件（100，200，300）和基部（500，600，700）可以预先在150的临时粘结步骤之前被加热到900℃。 5至50MPa的压力可以以临时粘结的步骤中施加。 半导体元件（100，200，300）可以是半导体发光元件。

公开(公告)号：EP2187440B1

公开(公告)日：2017-02-15

申请号：EP09173510.0

申请日：2009-10-20

Applicant: FUJITSU LIMITED

Inventor： Iwai, Taisuke ,  Kondo, Daiyu ,  Yamaguchi, Yoshitaka ,  Hirose, Shinichi ,  Sakita, Yukie ,  Soga, Ikuo ,  Yagishita, Yohei

IPC: H01L23/373 ,  H01L23/433

CPC classification number: H01L23/433 ,  H01L23/373 ,  H01L23/3733 ,  H01L24/28 ,  H01L24/31 ,  H01L2224/16225 ,  H01L2224/29499 ,  H01L2224/73253 ,  H01L2224/83365 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/10158 ,  H01L2924/15788 ,  H01L2924/16152 ,  Y10S977/734 ,  Y10S977/739 ,  Y10S977/742 ,  Y10T29/49002 ,  Y10T428/30 ,  Y10T428/31504 ,  H01L2924/00 ,  H01L2224/0401

Abstract: The electronic device includes a heat generator 54, a heat radiator 58, and a heat radiation material 56 disposed between the heat generator 54 and the heat radiator 58 and including a plurality of linear structures 12 of carbon atoms and a filling layer 14 formed of a thermoplastic resin and disposed between the plurality of linear structures 12.

Abstract translation: 该电子设备包括一个热发生器54，一个散热器58，和一个热辐射材料56的发热体54和散热体58和包括直链结构的碳原子12的多个部分并加以形成一个填充层14之间设置 热塑性树脂和线性结构12的多元性之间设置

公开(公告)号：EP3042972A1

公开(公告)日：2016-07-13

申请号：EP14842439.3

申请日：2014-09-05

Applicant: Furukawa Electric Co., Ltd.

Inventor： TAKAZAWA, Tsukasa

IPC: C22C9/00 ,  C22C9/02 ,  C22C9/04 ,  C22C9/06 ,  C22F1/08 ,  H01B1/02 ,  H01B5/02 ,  H01B13/00 ,  C22F1/00

CPC classification number: C22C9/00 ,  C22C9/02 ,  C22C9/04 ,  C22C9/06 ,  C22F1/08 ,  H01B1/026 ,  H01L24/43 ,  H01L24/45 ,  H01L2224/43848 ,  H01L2224/45015 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2924/2076 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01012 ,  H01L2924/0103 ,  H01L2924/01049 ,  H01L2924/01028 ,  H01L2924/01027 ,  H01L2924/0104 ,  H01L2924/01024

Abstract: {Problems} To provide, at low cost, a copper alloy wire that is excellent in a balance between high physical strength and favorable elongation, that is excellent in coil characteristics (service life of the coil and coil formability), which is obtained by using the copper alloy wire, and that is used, for example, in magnet wires.
{Means to solve} A copper alloy wire containing 0.1 to 4 mass% of Ag, with the balance being Cu and unavoidable impurities, wherein an area ratio of grains having orientation is 30% or more of the entire measurement area, when the transverse cross-section of the wire is observed from the axis direction by the EBSD method; and a method of producing thereof.

公开(公告)号：EP2109881A4

公开(公告)日：2016-06-01

申请号：EP07749694

申请日：2007-01-31

Applicant: HENKEL AG & CO KGAA

Inventor： EUNSOOK CHAE

IPC: H01L21/027 ,  H01L21/08

CPC classification number: H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L25/0657 ,  H01L2224/27416 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/29198 ,  H01L2224/2929 ,  H01L2224/29324 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/29364 ,  H01L2224/29369 ,  H01L2224/2937 ,  H01L2224/29386 ,  H01L2224/29388 ,  H01L2224/29393 ,  H01L2224/83191 ,  H01L2224/83856 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01056 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/05432 ,  H01L2924/05442 ,  H01L2924/04642 ,  H01L2924/0503 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/27

Abstract: This invention is a semiconductor wafer having an active side and a back side opposite the active side, which back side is coated with a filled, spin-coatable coating, wherein the coating comprises a resin and a spherical filler characterized by an average particle diameter of greater than 2 µm and a single peak particle size distribution. In another embodiment the invention is a method for producing a spin- coatable, B-stageable coating with a thixotropic index of 1.2 or less. In a third embodiment the invention is a method for producing a coated semiconductor wafer.

Abstract translation: 本发明是一种具有活性侧和与活性侧相反的背面的半导体晶片，其背侧涂覆有填充的可旋涂涂层，其中该涂层包括树脂和球形填料，其特征在于平均粒径为 大于2μm和单峰粒度分布。 在另一个实施方案中，本发明是用于制备触变指数为1.2或更小的可旋涂的B阶可涂层的方法。 在第三实施例中，本发明是一种制造涂覆的半导体晶片的方法。

公开(公告)号：EP1936676A3

公开(公告)日：2015-02-25

申请号：EP07024851.3

申请日：2007-12-20

Applicant: TDK Corporation

Inventor： Morita, Takaaki

IPC: H01L21/58 ,  H01L23/00 ,  H01L23/538 ,  H05K1/18 ,  H05K3/46 ,  H05K3/30 ,  H01L21/603

CPC classification number: H01L24/82 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/32 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/04105 ,  H01L2224/24051 ,  H01L2224/24226 ,  H01L2224/2505 ,  H01L2224/2518 ,  H01L2224/32225 ,  H01L2224/48227 ,  H01L2224/73267 ,  H01L2224/75313 ,  H01L2224/82039 ,  H01L2224/82047 ,  H01L2224/83132 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/83209 ,  H01L2224/83856 ,  H01L2224/92 ,  H01L2224/92244 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01037 ,  H01L2924/01038 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01057 ,  H01L2924/01073 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01088 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/30105 ,  H01L2924/351 ,  H05K1/185 ,  H05K3/303 ,  H05K3/305 ,  H05K3/4652 ,  H05K2201/10674 ,  H05K2203/0191 ,  H05K2203/074 ,  H05K2203/0776 ,  H05K2203/082 ,  H05K2203/1484 ,  Y02P70/613 ,  H01L2224/83 ,  H01L2224/82 ,  H01L2924/00

Abstract: There is disclosed a fixing method of an electronic component or the like in which when the electronic component and a resin layer are fixed, warp and bend of the electronic component can be inhibited. During manufacturing of a semiconductor-embedded substrate 200 in which a semiconductor device 220 is embedded, after the semiconductor device 220 is disposed on an unhardened resin layer 212, this device is stored in a container 31 of a pressurizing and heating unit 3, and the semiconductor device 220 is isotropically pressurized using an internal gas in the container 31 as a pressure medium, whereby the semiconductor device 220 is pressed to the unhardened resin layer 212, and the resin layer 212 is heated to harden. In consequence, the semiconductor device 220 is fixed and mounted on the resin layer 212 without being warped or bent.