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1.发明公开HIGH DENSITY PLANAR MAGNETIC DOMAIN WALL MEMORY APPARATUS AND METHOD OF FORMING THE SAME 有权具有平面磁畴壁的高密度记忆体装置及其制造方法
公开(公告)号：EP2140458A4
公开(公告)日：2010-05-05
申请号：EP07867608
申请日：2007-12-04
Applicant: IBM
Inventor： GAIDIS MICHAEL C , CLEVENGER LAWRENCE A , DALTON TIMOTHY J , DEBROSSE JOHN K , HSU LOUIS L C , RADENS CARL , WONG KEITH K H , YANG CHIH-CHAO
CPC classification number: G11C19/0841 , B82Y10/00 , G11C5/02 , G11C11/161 , G11C11/1675 , Y10T29/53165
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