Patent search ap:("IBM") AND inv:"ZAFAR SUFI" Page 1

1.

发明公开
ULTRA LOW-POWER CMOS BASED BIO-SENSOR CIRCUIT 审中-公开
Title translation: BIOSENSORSCHALTUNG AUF ULTRANIEDRIGLEISTUNGS-CMOS-BASIS

公开(公告)号：EP2521909A4

公开(公告)日：2017-07-26

申请号：EP11728544

申请日：2011-01-03

Applicant: IBM

Inventor： BANSAL ADITYA , ZAFAR SUFI

IPC: G01N27/403 , G01N27/414 , H03F3/70

CPC classification number: H03F3/70 , G01N27/4145 , Y10T436/11

Abstract: An apparatus configured to identify a material having an electric charge, the apparatus having: an inverting gain amplifier including a first field-effect transistor (FET) coupled to a second FET; wherein a gate of the first FET is configured to sense the electric charge and an output of the amplifier provides a measurement of the electric charge to identify the material.

Abstract translation: 一种被配置为识别具有电荷的材料的设备，所述设备具有：反相增益放大器，其包括耦合到第二FET的第一场效应晶体管（FET）其中第一FET的栅极被配置为感测电荷，并且放大器的输出提供电荷的测量以识别材料。

2.

发明公开
TiC AS A THERMALLY STABLE p-METAL CARBIDE ON HIGH k SiO2 GATE STACKS 有权
Title translation: TIC热稳定P金属碳化物在SiO2上栅堆叠高K型

公开(公告)号：EP1842240A4

公开(公告)日：2009-10-14

申请号：EP05826022

申请日：2005-12-02

Applicant: IBM

Inventor： CALLEGARI ALESSANDRO C , GRIBELYUK MICHAEL A , LACEY DIANNE L , MCFEELY FENTON R , SAENGER KATHERINE L , ZAFAR SUFI

IPC: H01L21/28 , C23C14/06 , C23C14/34 , H01L29/49 , H01L29/51

CPC classification number: H01L29/4966 , C23C14/0036 , C23C14/0635 , H01L21/28088 , H01L29/513 , H01L29/517 , H01L29/665

3.

发明公开
METHOD OF FORMING HfSiN METAL FOR n-FET APPLICATIONS 有权
Title translation: 法形成FOR HFSIN-N-FET应用的金属

公开(公告)号：EP1836732A4

公开(公告)日：2009-07-01

申请号：EP05826298

申请日：2005-12-02

Applicant: IBM

Inventor： CALLEGARI ALESSANDRO C , FRANK MARTIN M , JAMMY RAJARAO , LACEY DIANNE L , MCFEELY FENTON R , ZAFAR SUFI

IPC: H01L27/088 , H01L21/28 , H01L29/49

CPC classification number: H01L29/4966 , H01L21/28088 , H01L29/513 , H01L29/517 , H01L29/665 , H01L29/6659

Abstract: A compound metal comprising HfSiN which is a n-type metal having a workfunction of about 4.0 to about 4.5, preferably about 4.3, eV which is thermally stable on a gate stack comprising a high k dielectric and an interfacial layer. Furthermore, after annealing the stack of HfSiN/high k dielectric/interfacial layer at a high temperature (on the order of about 1000°C), there is a reduction of the interfacial layer, thus the gate stack produces a very small equivalent oxide thickness (12 Å classical), which cannot be achieved using TaSiN.

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