公开(公告)号：EP3367425A1

公开(公告)日：2018-08-29

申请号：EP17158430.3

申请日：2017-02-28

申请人： IMEC vzw

发明人： Peng, Lan ,  Kim, Soon-Wook ,  Beyne, Eric ,  Beyer, Gerald ,  Sleeckx, Erik ,  Miller, Robert

IPC分类号： H01L21/20

CPC分类号： H01L24/83 ,  H01J37/32091 ,  H01J37/321 ,  H01J2237/334 ,  H01L21/2007 ,  H01L23/5226 ,  H01L23/528 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/29082 ,  H01L2224/29187 ,  H01L2224/32145 ,  H01L2224/83009 ,  H01L2224/83011 ,  H01L2224/83022 ,  H01L2224/83895 ,  H01L2224/83896 ,  H01L2224/83948 ,  H01L2224/83986 ,  H01L2924/04642 ,  H01L2924/059 ,  H01L2924/20106 ,  H01L2924/20107

摘要： A method for direct bonding of a first substrate to a second substrate, the first and second substrate comprising dielectric bonding layers, wherein the bonding takes place by bringing the dielectric bonding layers into mutual contact to form a substrate assembly and subjecting the assembly to a post-bond anneal, and wherein both bonding layers are subjected to a pre-treatment prior to bonding, the pre-treatment comprising the following steps performed in the order in which they are stated :
• a first plasma activation step in an inert gas plasma,
• a second plasma activation step in an oxygen plasma,
• a wet surface treatment including a water rinsing step.

公开(公告)号：EP3024019A1

公开(公告)日：2016-05-25

申请号：EP14194506.3

申请日：2014-11-24

申请人： IMEC VZW

发明人： KIM, Soon-Wook ,  Peng, Lan ,  Verdonck, Patrick ,  Miller, Robert ,  Beyer, Gerald ,  Beyne, Eric

IPC分类号： H01L21/60 ,  H01L23/31

CPC分类号： H01L24/83 ,  H01L21/02065 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31053 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/05 ,  H01L24/08 ,  H01L24/32 ,  H01L24/80 ,  H01L25/0657 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03616 ,  H01L2224/03845 ,  H01L2224/03848 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05576 ,  H01L2224/05686 ,  H01L2224/08121 ,  H01L2224/08145 ,  H01L2224/32501 ,  H01L2224/80097 ,  H01L2224/80201 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2224/80948 ,  H01L2224/83031 ,  H01L2224/83047 ,  H01L2224/83048 ,  H01L2224/83359 ,  H01L2924/00012 ,  H01L2924/0504 ,  H01L2924/00014 ,  H01L2924/20106 ,  H01L2924/2011

摘要： The present invention is related to a method for bonding a first semiconductor substrate to a second semiconductor substrate by direct bonding, wherein the substrates are both provided on their contact surfaces with a dielectric layer, followed by a CMP step for reducing the roughness of the dielectric layer. Preferably, the dielectric layer after CMP has an roughness of less than 0.2nm RMS. Then a layer of SiCN is deposited onto the dielectric layer, followed by a CMP step which reduces the roughness of the SiCN layer to the order of 1 tenth of a nanometre. Preferably the RMS value after CMP is less than 0.1nm. Then the substrates are subjected to a pre-bond annealing step. The substrates are then bonded by direct bonding, possibly preceded by one or more pre-treatments of the contact surfaces, and followed by a post-bond annealing step, at a temperature of less than or equal to 250°C, preferably between 200°C and 250°C. It has been found that the bond strength is excellent, even at the above named annealing temperatures, which are lower than presently known in the art.

摘要翻译： 本发明涉及通过直接接合将第一半导体衬底接合到第二半导体衬底的方法，其中衬底都在其与电介质层的接触表面上设置，随后是用于降低电介质粗糙度的CMP步骤 层。 优选地，CMP之后的介电层具有小于0.2nm RMS的粗糙度。 然后在电介质层上沉积一层SiCN，接着进行CMP步骤，将SiCN层的粗糙度降低到十分之一纳米。 CMP后的RMS值优选小于0.1nm。 然后对基板进行预结合退火步骤。 然后通过直接接合将基底粘合，可能之前是接触表面的一个或多个预处理，然后在小于或等于250℃，优选在200℃之间的后结合退火步骤 C和250℃。 已经发现，即使在上述命名的退火温度下，粘结强度也是优异的，其比现有技术中已知的低。