公开(公告)号：EP2313923B1

公开(公告)日：2018-11-21

申请号：EP09808777.8

申请日：2009-08-19

申请人： International Business Machines Corporation

发明人： FAROOQ, Mukta, G. ,  HANNON, Robert ,  IYER, Subramanian, S. ,  KOESTER, Steven, J. ,  PORUSHOTHAMAN, Sampath ,  YU, Roy, R.

IPC分类号： H01L27/06 ,  H01L27/105 ,  H01L23/00

CPC分类号： H01L27/105 ,  H01L24/11 ,  H01L27/0688 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05024 ,  H01L2224/05147 ,  H01L2224/05184 ,  H01L2224/05568 ,  H01L2224/0557 ,  H01L2924/00014 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2224/05599

摘要： A method is provided for fabricating a 3D integrated circuit structure. According to the method, a first active circuitry layer wafer is provided. The first active circuitry layer wafer comprises a P+ portion covered by a P− layer, and the P− layer includes active circuitry. The first active circuitry layer wafer is bonded face down to an interface wafer that includes a first wiring layer, and then the P+ portion of the first active circuitry layer wafer is selectively removed with respect to the P− layer of the first active circuitry layer wafer. Next, a wiring layer is fabricated on the backside of the P− layer. Also provided are a tangible computer readable medium encoded with a program for fabricating a 3D integrated circuit structure, and a 3D integrated circuit structure.

公开(公告)号：EP2162927B1

公开(公告)日：2018-10-24

申请号：EP08758035.3

申请日：2008-05-07

申请人： OSRAM Opto Semiconductors GmbH

发明人： FISCHER, Helmut ,  EISSLER, Dieter ,  HEINDL, Alexander

IPC分类号： H01L33/00 ,  H01L25/075 ,  H01L21/78 ,  H01L21/68

CPC分类号： H01L25/0753 ,  H01L21/561 ,  H01L21/563 ,  H01L21/6835 ,  H01L23/3114 ,  H01L24/12 ,  H01L24/81 ,  H01L24/83 ,  H01L24/90 ,  H01L24/95 ,  H01L24/97 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/382 ,  H01L33/44 ,  H01L2221/68322 ,  H01L2221/68354 ,  H01L2221/68363 ,  H01L2221/68377 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/13111 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13155 ,  H01L2224/13169 ,  H01L2224/16225 ,  H01L2224/29144 ,  H01L2224/2919 ,  H01L2224/81001 ,  H01L2224/81801 ,  H01L2224/83851 ,  H01L2224/90 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10158 ,  H01L2924/10329 ,  H01L2924/12041 ,  H01L2924/181 ,  H01L2924/01032 ,  H01L2924/0105 ,  H01L2224/81 ,  H01L2924/00014 ,  H01L2924/00

公开(公告)号：EP3216046A4

公开(公告)日：2018-07-18

申请号：EP15856201

申请日：2015-11-06

申请人： TEXAS INSTRUMENTS INC

发明人： GUO HONGLIN ,  TAYLOR TIM A ,  WEST JEFF A ,  JACKSON RICKY A ,  WILLIAMS BYRON

IPC分类号： H01L21/02 ,  H01G4/14 ,  H01G4/18 ,  H01G4/224 ,  H01G4/236 ,  H01G4/33 ,  H01L21/033 ,  H01L23/31

CPC分类号： H01L21/02118 ,  H01G4/14 ,  H01G4/18 ,  H01G4/224 ,  H01G4/236 ,  H01G4/33 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/0228 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/3192 ,  H01L23/564 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L28/40 ,  H01L51/00 ,  H01L2224/02166 ,  H01L2224/0345 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/04042 ,  H01L2224/05567 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05669 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/03 ,  H01L2924/014 ,  H01L2224/45099

摘要： It has been discovered that poor TDDB reliability of microelectronic device capacitors with organic polymer material in the capacitor dielectric is due to water molecules infiltrating the organic polymer material when the microelectronic device is exposed to water vapor in the operating ambient. Water molecule infiltration from water vapor in the ambient is effectively reduced by a moisture barrier comprising a layer of aluminum oxide formed by an atomic layer deposition (ALD) process. A microelectronic device includes a capacitor with organic polymer material in the capacitor dielectric and a moisture barrier with a layer of aluminum oxide formed by an ALD process.

公开(公告)号：EP3116037B1

公开(公告)日：2018-03-07

申请号：EP14850112

申请日：2014-11-20

申请人： LUMENS CO LTD

发明人： OH SEUNGHYUN ,  LEE SEUNGHOON ,  NAM TEHONG ,  HAN KANGMIN

IPC分类号： H01L33/62 ,  H01L23/00 ,  H01L33/48

CPC分类号： H01L33/62 ,  G02B6/0073 ,  G02B6/009 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L33/486 ,  H01L33/54 ,  H01L33/60 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05553 ,  H01L2224/05568 ,  H01L2224/0615 ,  H01L2224/10175 ,  H01L2224/1132 ,  H01L2224/131 ,  H01L2224/16257 ,  H01L2224/26175 ,  H01L2224/2732 ,  H01L2224/291 ,  H01L2224/32257 ,  H01L2224/81192 ,  H01L2224/81385 ,  H01L2224/81815 ,  H01L2224/83192 ,  H01L2224/83385 ,  H01L2224/83815 ,  H01L2933/0066 ,  H01L2924/00014

摘要： Provided are a light emitting device package, a backlight unit, a lighting device and its manufacturing method. The light emitting device package may include a flip chip type light emitting device having a first pad and a second pad, a lead frame that includes a first electrode disposed at one side of an electrode separation space, and a second electrode disposed at the other side of the electrode separation space, and on which the light emitting device is mounted, a first bonding medium formed between the first pad of the light emitting device and the first electrode of the lead frame to electrically connect the first pad and the first electrode, and a second bonding medium formed between the second pad of the light emitting device and the second electrode of the lead frame to electrically connect the second pad and the second electrode, wherein at least one first accommodating cup capable of accommodating the first bonding medium is formed in the first electrode of the lead frame, wherein at least one second accommodating cup capable of accommodating the second bonding medium is formed in the second electrode of the lead frame, and wherein at least one air discharge path is formed on each of the first and second accommodating cups.

公开(公告)号：EP3155653A4

公开(公告)日：2018-02-21

申请号：EP14894875

申请日：2014-06-16

申请人： INTEL CORP

发明人： NELSON DONALD W ,  WEBB M CLAIR ,  MORROW PATRICK ,  JUN KIMIN

IPC分类号： H01L27/06 ,  H01L21/335 ,  H01L29/78

CPC分类号： H01L43/02 ,  H01L21/6835 ,  H01L23/49827 ,  H01L23/522 ,  H01L23/5389 ,  H01L23/66 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L27/0694 ,  H01L27/101 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2223/6677 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/131 ,  H01L2224/16227 ,  H01L2224/94 ,  H01L2225/06517 ,  H01L2225/06572 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/1579 ,  H01L2224/03 ,  H01L2924/014

摘要： A method including forming a plurality of first interconnects and a plurality of second interconnects on opposite sides of an integrated circuit device layer including a plurality of circuit devices, wherein forming ones of the plurality of first interconnects and a plurality of second interconnects includes embedding memory devices therein. An apparatus including a substrate including a plurality of first interconnects and a plurality of second interconnects on opposite sides of an integrated circuit device layer including a plurality of circuit devices, wherein ones of the plurality of first interconnects and a plurality of second interconnects includes memory devices embedded therein.

公开(公告)号：EP3206225A1

公开(公告)日：2017-08-16

申请号：EP15849378.3

申请日：2015-10-09

申请人： Ishihara Chemical Co., Ltd.

发明人： IUCHI, Shoya ,  HATABE, Masaru

IPC分类号： H01L21/60 ,  H05K3/34

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/05568 ,  H01L2224/05655 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11848 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13023 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13118 ,  H01L2224/13139 ,  H05K3/34 ,  H01L2924/014 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01083 ,  H01L2924/01047

摘要： In order to manufacture an alloy bump, a resist pattern 12 having openings 13 which expose a substrate 10 is formed on the substrate 10, an under-bump metal 11 is formed on the substrate 10 inside the openings 13, a first plating film 14 is formed on the under-bump metal 11 by electroplating, a second plating film 15 containing no metal components which are contained in the first plating film 14 is formed on the first plating film 14 by electroplating, the resist pattern 12 is removed, and the alloy bump 16 is formed by heat treating the substrate 11 to thereby alloy the first plating film 14 and the second plating film 15.

摘要翻译： 为了制造合金凸块，在基板10上形成具有使基板10露出的开口部13的抗蚀剂图案12，在开口部13内在基板10上形成凸块下金属11，第一镀膜14为 通过电镀形成在凸块下金属11上，通过电镀在第一镀膜14上形成包含在第一镀膜14中的不包含金属成分的第二镀膜15，去除抗蚀剂图案12，并且合金 通过对基板11进行热处理来形成凸块16，从而使第一镀膜14和第二镀膜15合金化。

公开(公告)号：EP3198639A1

公开(公告)日：2017-08-02

申请号：EP15738271.4

申请日：2015-07-08

申请人： Audi AG

发明人： VETTER, Günter ,  APELSMEIER, Andreas ,  SUCKEL, Henning

IPC分类号： H01L23/492

CPC分类号： H01L24/83 ,  H01L21/4871 ,  H01L23/492 ,  H01L24/32 ,  H01L2224/04026 ,  H01L2224/05568 ,  H01L2224/05647 ,  H01L2224/29007 ,  H01L2224/29036 ,  H01L2224/291 ,  H01L2224/32013 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/83385 ,  H01L2224/8384 ,  H01L2924/1203 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00014

摘要： The invention relates to a method for producing a semi-conductor arrangement (1), comprising at least one base element (2) and a semi-conductor (3), said semi-conductor (3) being secured to the base element (2) by means of a sintered layer (4). According to the invention, an area (9) of the base element (2), which is directly adjacent to the sintered layer (4), is perforated at least in parts. The invention further relates to a semi-conductor arrangement (1).

摘要翻译： 本发明涉及一种用于制造半导体装置（1）的方法，所述半导体装置包括至少一个基座元件（2）和半导体（3），所述半导体（3）固定到基座元件（2） ）通过烧结层（4）进行。 根据本发明，与烧结层（4）直接相邻的基体元件（2）的区域（9）至少部分地穿孔。 本发明还涉及一种半导体装置（1）。

公开(公告)号：EP1159766B1

公开(公告)日：2017-08-02

申请号：EP00984091.9

申请日：2000-12-07

申请人： Philips Lumileds Lighting Company LLC

发明人： KRAMES, Michael, R. ,  STEIGERWALD, Daniel, A. ,  KISH, Fred, A., Jr. ,  RAJKOMAR, Pradeep ,  WIERER, Jonathan J., Jr. ,  TAN, Tun, S.

IPC分类号： H01L33/38 ,  H01L33/40 ,  H01L33/62 ,  H01L33/20 ,  H01L33/64 ,  H01L27/15 ,  H01L25/16

CPC分类号： H01L33/62 ,  G09G2360/148 ,  H01L25/167 ,  H01L27/156 ,  H01L33/20 ,  H01L33/38 ,  H01L33/405 ,  H01L33/641 ,  H01L33/647 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/05572 ,  H01L2224/14 ,  H01L2924/0002 ,  H01L2924/00

公开(公告)号：EP1918991B1

公开(公告)日：2017-04-05

申请号：EP07121545.3

申请日：1997-08-27

申请人： Nippon Steel & Sumitomo Metal Corporation

发明人： Tatsumi, Kohei ,  Shimokawa, Kenji ,  Hashino, Eiji

IPC分类号： H01L23/485 ,  H01L21/60 ,  H01L21/67

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/742 ,  H01L24/81 ,  H01L24/94 ,  H01L2224/0345 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05026 ,  H01L2224/05027 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05111 ,  H01L2224/05116 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/05554 ,  H01L2224/05555 ,  H01L2224/05568 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/11003 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/13013 ,  H01L2224/13014 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14131 ,  H01L2224/16227 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01061 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  Y10T29/49222 ,  H01L2924/00014 ,  H01L2924/01049 ,  H01L2224/1308 ,  H01L2224/13099 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05611 ,  H01L2224/05669 ,  H01L2224/11 ,  H01L2924/00012

公开(公告)号：EP3116037A1

公开(公告)日：2017-01-11

申请号：EP14850112.5

申请日：2014-11-20

申请人： Lumens Co., Ltd.

发明人： OH, Seunghyun ,  LEE, Seunghoon ,  NAM, Tehong ,  HAN, Kangmin

IPC分类号： H01L33/62

CPC分类号： H01L33/62 ,  G02B6/0073 ,  G02B6/009 ,  H01L24/16 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L33/486 ,  H01L33/54 ,  H01L33/60 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/05553 ,  H01L2224/05568 ,  H01L2224/0615 ,  H01L2224/10175 ,  H01L2224/1132 ,  H01L2224/131 ,  H01L2224/16257 ,  H01L2224/26175 ,  H01L2224/2732 ,  H01L2224/291 ,  H01L2224/32257 ,  H01L2224/81192 ,  H01L2224/81385 ,  H01L2224/81815 ,  H01L2224/83192 ,  H01L2224/83385 ,  H01L2224/83815 ,  H01L2933/0066 ,  H01L2924/00014

摘要： Provided are a light emitting device package, a backlight unit, a lighting device and its manufacturing method. The light emitting device package may include a flip chip type light emitting device having a first pad and a second pad, a lead frame that includes a first electrode disposed at one side of an electrode separation space, and a second electrode disposed at the other side of the electrode separation space, and on which the light emitting device is mounted, a first bonding medium formed between the first pad of the light emitting device and the first electrode of the lead frame to electrically connect the first pad and the first electrode, and a second bonding medium formed between the second pad of the light emitting device and the second electrode of the lead frame to electrically connect the second pad and the second electrode, wherein at least one first accommodating cup capable of accommodating the first bonding medium is formed in the first electrode of the lead frame, wherein at least one second accommodating cup capable of accommodating the second bonding medium is formed in the second electrode of the lead frame, and wherein at least one air discharge path is formed on each of the first and second accommodating cups.

摘要翻译： 本发明提供一种发光器件封装，背光单元，照明装置及其制造方法。 发光器件封装可包括：具有第一垫和第二垫的倒装芯片型发光器件，引线框架确实包括在电极的分离空间的一侧设置的第一电极，并在另一侧设置的第二电极 电极分离空间，并在其上的发光装置被安装的，所述发光器件的所述第一焊盘和引线框架电的第一电极之间形成的第一接合装置连接的第一焊盘和所述第一电极，以及 所述发光器件的所述第二焊盘与引线框架，以电的第二电极之间形成的第二接合装置连接第二焊盘和第二电极，worin能够容纳所述第一接合装置中的至少一个第一容纳杯子中形成 所述引线框架的所述第一电极，worin能够容纳第二接合介质中的至少一个第二容纳杯在形成 worin引线框架的第二电极，和至少一个空气排放路径是形成在每个第一和第二容纳杯。