公开(公告)号：EP1604405A1

公开(公告)日：2005-12-14

申请号：EP03800030.3

申请日：2003-12-18

申请人： INTEL CORPORATION

发明人： BRASK, Justin ,  DOCZY, Mark ,  BARNAK, John ,  CHAU, Robert

IPC分类号： H01L29/51 ,  H01L21/28 ,  H01L21/336

CPC分类号： H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/823814 ,  H01L21/823871 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： A method for making a semiconductor device is described. That method comprises forming a high-k gate dielectric layer (110) on a substrate (100), then forming a capping (115) layer on the high-k gate dielectric layer. After oxidizing the capping layer to form a capping dielectric oxide (125) on the high-k gate dielectric layer, a gate electrode (120) is formed on the capping dielectric oxide.

公开(公告)号：EP1573803A2

公开(公告)日：2005-09-14

申请号：EP03814832.6

申请日：2003-12-15

申请人： INTEL CORPORATION

发明人： DOCZY, Mark ,  KEATING, Steven ,  KAVALIEROS, Jack ,  DOYLE, Brian ,  BARNS, Chris ,  BARNAK, John ,  MCSWINEY, Michael ,  BRASK, Justin

IPC分类号： H01L21/8238

CPC分类号： H01L29/66545 ,  H01L21/32134 ,  H01L21/32137 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/7833 ,  Y10S438/926

摘要： At least a p-type and n-type semiconductor device deposited upon a semiconductor wafer containing metal or metal alloy gates. More particularly, a complementary metal-oxide-semiconductor (CMOS) device is formed on a semiconductor wafer having n-type and p-type metal gates.

公开(公告)号：EP1573803B1

公开(公告)日：2013-06-05

申请号：EP03814832.6

申请日：2003-12-15

申请人： Intel Corporation

发明人： DOCZY, Mark ,  KEATING, Steven ,  KAVALIEROS, Jack ,  DOYLE, Brian ,  BARNS, Chris ,  BARNAK, John ,  MCSWINEY, Michael ,  BRASK, Justin

IPC分类号： H01L21/8238

CPC分类号： H01L29/66545 ,  H01L21/32134 ,  H01L21/32137 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/7833 ,  Y10S438/926