公开(公告)号：EP1253632A2

公开(公告)日：2002-10-30

申请号：EP02015293.0

申请日：1995-12-21

Applicant: INTEL CORPORATION

Inventor： Chau, Robert S. ,  Packan, Paul A. ,  Chern, Chan-Hong ,  Yau, Leopoldo D. ,  Jan, Chia-Hong ,  Weldon, Kevin R.

IPC: H01L21/336 ,  H01L21/225

CPC classification number: H01L29/0847 ,  H01L21/2254 ,  H01L21/2257 ,  H01L21/2807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823864 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/45 ,  H01L29/4925 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66613 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834

Abstract: A novel transistor (200) with a low resistance ultra shallow tip region (214) and its method of fabrication. The novel transistor of the present invention has a source/drain extension of tip region (210) comprising an ultra shallow region (214) which extends beneath the gate electrode and a raised region (216).

公开(公告)号：EP1253632A3

公开(公告)日：2004-12-08

申请号：EP02015293.0

申请日：1995-12-21

Applicant: INTEL CORPORATION

Inventor： Chau, Robert S. ,  Packan, Paul A. ,  Chern, Chan-Hong ,  Yau, Leopoldo D. ,  Jan, Chia-Hong ,  Weldon, Kevin R.

IPC: H01L21/336 ,  H01L21/225 ,  H01L29/78

CPC classification number: H01L29/0847 ,  H01L21/2254 ,  H01L21/2257 ,  H01L21/2807 ,  H01L21/823814 ,  H01L21/823828 ,  H01L21/823864 ,  H01L29/41775 ,  H01L29/41783 ,  H01L29/45 ,  H01L29/4925 ,  H01L29/4933 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66613 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/7834

Abstract: A novel transistor (200) with a low resistance ultra shallow tip region (214) and its method of fabrication. The novel transistor of the present invention has a source/drain extension of tip region (210) comprising an ultra shallow region (214) which extends beneath the gate electrode and a raised region (216).

Abstract translation: 具有低电阻超浅尖端区域（214）的新型晶体管（200）及其制造方法。 本发明的新型晶体管具有尖端区域（210）的源极/漏极扩展部分，其包括在栅电极下方延伸的超浅区域（214）和升高区域（216）。