公开(公告)号：EP1673416A2

公开(公告)日：2006-06-28

申请号：EP04789413.4

申请日：2004-09-30

申请人： INTEL CORPORATION

发明人： FELLER, Daniel, A. ,  BARNS, Chris, E.

IPC分类号： C09G1/02 ,  C09K3/14 ,  H01L21/321 ,  H01L21/768 ,  H01L21/3105

CPC分类号： H01L21/7684 ,  C09G1/02 ,  C09K3/1463 ,  C23F3/06 ,  H01L21/3212 ,  H01L28/65

摘要： A slurry for removing metals, useful in the manufacture of integrated circuits generally, and for the chemical mechanical polishing of noble metals particularly, may be formed by combining periodic acid, an abrasive, and a buffer system, wherein the pH of the slurry is between about (4) to about (8).

公开(公告)号：EP1700338A1

公开(公告)日：2006-09-13

申请号：EP04815333.2

申请日：2004-12-21

申请人： INTEL CORPORATION

发明人： KAVALIEROS, Jack ,  BRASK, Justin, K. ,  DOCZY, Mark, L. ,  HARELAND, Scott, A. ,  METZ, Matthew, V. ,  BARNS, Chris, E. ,  CHAU, Robert, S.

IPC分类号： H01L21/8238

CPC分类号： H01L29/517 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/66545 ,  Y10S438/926

摘要： Methods and associated structures of forming a microelectronic device are described. Those methods comprise providing a substrate comprising a first transistor structure comprising an n-type gate material and second transistor structure comprising a p-type gate material, selectively removing the n-type gate material to form a recess in the first gate structure, and then filling the recess with an n-type metal gate material.

公开(公告)号：EP1700338B1

公开(公告)日：2014-09-17

申请号：EP04815333.2

申请日：2004-12-21

申请人： Intel Corporation

发明人： KAVALIEROS, Jack ,  BRASK, Justin, K. ,  DOCZY, Mark, L. ,  HARELAND, Scott, A. ,  METZ, Matthew, V. ,  BARNS, Chris, E. ,  CHAU, Robert, S.

IPC分类号： H01L29/49 ,  H01L29/51 ,  H01L21/8238 ,  H01L29/66

CPC分类号： H01L29/517 ,  H01L21/823842 ,  H01L29/495 ,  H01L29/66545 ,  Y10S438/926