摘要:
A semiconductor device comprising a semiconductor substrate (1) having therein channel regions; a gate dielectric layer (2) over the channel region; gate electrodes (3) over the gate dielectric layer; doped regions (4, 5) self-aligned with respect to the gate electrodes (3); isolation trenches (6) containing isolating material (7); isolation material (8) on the sides of the gate electrodes which are self-aligned in the width direct such that the gates (3) butt against the trenches (6) without overlap; an insulation layer (13) through which contact windows are etched; and finally metallic-type high conductivity electrical inter-connects (14) to the gate electrodes (3) and the source and drain regions (4, 5); are provided. Also, a method for fabricating such devices is provided.
摘要:
An E-beam testing system uses the E-beam to test a sample with conductive elements thereon. The system charges conductive elements on the sample. Above the sample and parallel to its upper surface is a stacked pair of parallel extraction grids. One grid is biased positively to accelerate secondary electrons emitted from the sample. The other grid is biased at a voltage to control the angular distribution of secondary electrons passing through the grid. Rectangular double gridsets, tilted with respect to the beam and the sample, are located above and laterally of the sample and the E-beam. Those grids are charged to attract secondary electrons from the sample. Triangular grids between the rectangular grids and a top grid above and parallel to the sample with an aperture therethrough for the E-beam are biased negatively to repel secondary electrons. Below the rectangular and triangular grids is located a cylindrical attraction grid biased positively, coaxial with the E-beam. A method of testing electrical connections and short circuits of conductors on a body of insulating material without physical contact includes the steps of :
a) applying an unfocused flood electron beam with a low current to a broad surface of the body, simultaneously applying a different focused probe electron beam having an energy predetermined to provide a charge of opposite polarity from the flood beam to other areas of the body to be probed, b) generating an electron beam to cause secondary electron emission from the conductors; and c) detecting the presence of connections not at a given potential.
摘要:
A system for the detection of features (14) in a semiconductor wafer (10) for registration. An E-beam scans across an insulator (16) covered with a metallic layer (18). The high energy electrons penetrate and cause the generation of electron/holes pairs. The drift or migration can be sensed as a current (22), the intensity of which is a function of the applied field strength. The field strength is in turn varied by the topology of the feature (14) or the presence of a junction in the device. Since the E-beam position is known, registration occurs by correlation with the underlying feature (14) as it is mapped out by sensing variations in current (22). The feature may be an alignment mark or a device under construction on the wafer (10).
摘要:
A system for the detection of features (14) in a semiconductor wafer (10) for registration. An E-beam scans across an insulator (16) covered with a metallic layer (18). The high energy electrons penetrate and cause the generation of electron/holes pairs. The drift or migration can be sensed as a current (22), the intensity of which is a function of the applied field strength. The field strength is in turn varied by the topology of the feature (14) or the presence of a junction in the device. Since the E-beam position is known, registration occurs by correlation with the underlying feature (14) as it is mapped out by sensing variations in current (22). The feature may be an alignment mark or a device under construction on the wafer (10).
摘要:
A method of testing electrical connections and short circuits of conductors on a body of insulating material without physical contact includes the steps of: a) applying an unfocused flood electron beam with a low current to a broad surface of the body, simultaneously applying a different focused probe electron beam having an energy predetermined to provide a charge of opposite polarity from the flood beam to other areas of the body to be probed, b) generating an electron beam to cause secondary electron emission from the conductors; and c) detecting the presence of connections not at a given potential.
摘要:
A semiconductor device comprising a semiconductor substrate (1) having therein channel regions; a gate dielectric layer (2) over the channel region; gate electrodes (3) over the gate dielectric layer; doped regions (4, 5) self-aligned with respect to the gate electrodes (3); isolation trenches (6) containing isolating material (7); isolation material (8) on the sides of the gate electrodes which are self-aligned in the width direct such that the gates (3) butt against the trenches (6) without overlap; an insulation layer (13) through which contact windows are etched; and finally metallic-type high conductivity electrical inter-connects (14) to the gate electrodes (3) and the source and drain regions (4, 5); are provided. Also, a method for fabricating such devices is provided.