Apparatus for opens/shorts testing of capacitively coupled networks in substrates using electron beams
    6.
    发明公开
    Apparatus for opens/shorts testing of capacitively coupled networks in substrates using electron beams 失效
    装置和方法用于测试中断/在使用电子束的衬底的电容耦合网络短路。

    公开(公告)号:EP0389397A2

    公开(公告)日:1990-09-26

    申请号:EP90480023.2

    申请日:1990-02-20

    IPC分类号: G01R31/305

    CPC分类号: G01R31/305 G01R31/307

    摘要: An E-beam testing system uses the E-beam to test a sample with conductive elements thereon. The system charges conductive elements on the sample. Above the sample and parallel to its upper surface is a stacked pair of paral­lel extraction grids. One grid is biased positively to accelerate secondary electrons emitted from the sample. The other grid is biased at a voltage to control the angular distribution of secondary electrons passing through the grid. Rectangular double gridsets, tilted with respect to the beam and the sample, are located above and laterally of the sample and the E-beam. Those grids are charged to attract secondary electrons from the sample. Triangular grids between the rectangular grids and a top grid above and parallel to the sample with an aperture therethrough for the E-beam are biased negatively to repel secondary electrons. Below the rectangular and triangular grids is located a cylindrical attraction grid biased positively, coaxial with the E-beam. A method of testing electrical connections and short circuits of conductors on a body of insulating material without physical contact includes the steps of :

    a) applying an unfocused flood electron beam with a low current to a broad surface of the body, simultaneously applying a different focused probe electron beam having an energy predetermined to provide a charge of opposite polarity from the flood beam to other areas of the body to be probed,
    b) generating an electron beam to cause secondary electron emission from the conductors; and
    c) detecting the presence of connections not at a given potential.

    摘要翻译: 电子束测试系统采用电子束来测试其上具有导电元件的样品。 该系统充电的样品的导电元件。 样品和平行于其上表面的上方是一个层叠对平行引出栅格。 一个网格正偏压,以加速从所述样本发射的二次电子。 其它栅格在一个电压偏置,以控制穿过网格的二次电子的角度分布。 矩形双格套,相对于倾斜到光束和样品,位于上方和所述样品和所述电子束的尾盘反弹。 这些网格被充电到吸引来自样品的二次电子。 矩形网格和上方的顶格,并且平行于样品之间三角网格与孔径有通过用于电子束被负偏置以排斥二次电子。 下面的矩形和三角形网格位于正偏置的圆柱形吸引力网格,同轴与电子束。 上的绝缘材料没有物理接触的主体的测试导体的电连接和短路的方法,包括如下步骤:a)用低电流到所述主体的一个宽表面施加到未聚焦的洪水电子束,同时将不同的聚焦 具有预定的能量,以提供电荷从洪水束到身体的其他部位的相反极性的探针的电子束被探测,b)在电子束产生于从导体引起的二次电子发射; 和c)检测连接的存在不是在一个给定的电势。

    Method of electron beam lithography alignment
    8.
    发明公开
    Method of electron beam lithography alignment 失效
    Ausrichtungsverfahren in der Elektronenstrahl-Lithographie。

    公开(公告)号:EP0342316A2

    公开(公告)日:1989-11-23

    申请号:EP89103136.1

    申请日:1989-02-23

    摘要: A system for the detection of features (14) in a semiconductor wafer (10) for registration. An E-beam scans across an insulator (16) covered with a metallic layer (18). The high energy electrons penetrate and cause the generation of electron/holes pairs. The drift or migration can be sensed as a current (22), the intensity of which is a function of the applied field strength. The field strength is in turn varied by the topology of the feature (14) or the presence of a junction in the device. Since the E-beam position is known, registration occurs by correlation with the underlying feature (14) as it is mapped out by sensing variations in current (22). The feature may be an alignment mark or a device under construction on the wafer (10).

    摘要翻译: 一种用于检测用于配准的半导体晶片(10)中的特征(14)的系统。 电子束扫描覆盖有金属层(18)的绝缘体(16)。 高能电子穿透并产生电子/空穴对。 漂移或迁移可以被感测为电流(22),其强度是所施加的场强的函数。 磁场强度又因特征(14)的拓扑结构或设备中存在结点而变化。 由于电子束位置是已知的,所以通过与底层特征(14)的相关来进行登记,因为它通过感测电流(22)中的变化来映射。 该特征可以是晶片(10)上的对准标记或正在构造的器件。

    Method for opens/shorts testing of capacity coupled networks in substrates using electron beams
    9.
    发明公开
    Method for opens/shorts testing of capacity coupled networks in substrates using electron beams 失效
    一种用于检查中断方法/Kurschlüssen在电容在使用电子束的衬底耦合的网络。

    公开(公告)号:EP0678752A1

    公开(公告)日:1995-10-25

    申请号:EP95109028.1

    申请日:1990-02-20

    IPC分类号: G01R31/305

    CPC分类号: G01R31/305 G01R31/307

    摘要: A method of testing electrical connections and short circuits of conductors on a body of insulating material without physical contact includes the steps of: a) applying an unfocused flood electron beam with a low current to a broad surface of the body, simultaneously applying a different focused probe electron beam having an energy predetermined to provide a charge of opposite polarity from the flood beam to other areas of the body to be probed, b) generating an electron beam to cause secondary electron emission from the conductors; and c) detecting the presence of connections not at a given potential.

    摘要翻译: 上的绝缘材料没有物理接触的主体的测试导体的电连接和短路的方法,包括如下步骤:a)用低电流到所述主体的一个宽表面施加到未聚焦的洪水电子束,同时将不同的聚焦 具有预定的能量,以提供电荷从洪水束到身体的其他部位的相反极性的探针的电子束被探测,b)在电子束产生于从导体引起的二次电子发射; 和c)检测连接的存在不是在一个给定的电势。

    Semiconductor field effect transistor device and fabrication thereof
    10.
    发明公开
    Semiconductor field effect transistor device and fabrication thereof 失效
    Halbleiter-Feldeffekttransistoranordnung und ihr Herstellungsverfahren。

    公开(公告)号:EP0513639A2

    公开(公告)日:1992-11-19

    申请号:EP92107591.7

    申请日:1992-05-06

    摘要: A semiconductor device comprising a semiconductor substrate (1) having therein channel regions; a gate dielectric layer (2) over the channel region; gate electrodes (3) over the gate dielectric layer; doped regions (4, 5) self-aligned with respect to the gate electrodes (3); isolation trenches (6) containing isolating material (7); isolation material (8) on the sides of the gate electrodes which are self-aligned in the width direct such that the gates (3) butt against the trenches (6) without overlap; an insulation layer (13) through which contact windows are etched; and finally metallic-type high conductivity electrical inter-connects (14) to the gate electrodes (3) and the source and drain regions (4, 5); are provided. Also, a method for fabricating such devices is provided.

    摘要翻译: 一种半导体器件,包括其中具有沟道区的半导体衬底(1) 沟道区上的栅介质层(2); 栅极电极(3); 相对于栅极电极(3)自对准的掺杂区域(4,5); 隔离沟槽(6),包含隔离材料(7); 隔离材料(8),其在栅极电极的侧面以宽度直接自对准,使得栅极(3)不重叠地对接在沟槽(6)上; 绝缘层(13),蚀刻接触窗口; 最后金属型高电导率电连接(14)到栅极电极(3)和源极和漏极区域(4,5); 被提供。 此外,提供了一种制造这种装置的方法。