Method of etching polyimides and resulting passivation structures
    1.
    发明公开
    Method of etching polyimides and resulting passivation structures 失效
    Methode zumÄtzenvon Polyimiden und resultierenden passivierten Strukturen。

    公开(公告)号:EP0394638A2

    公开(公告)日:1990-10-31

    申请号:EP90103546.9

    申请日:1990-02-23

    IPC分类号: G03F7/40

    摘要: A method of etching polyimide material having metal­lization patterned thereon in which an epoxy resin system not only provides the etch mask for etching the polyimide but also provides a resulting passivation structure overlying the metallization on the polyimide substrate. The polyimide having a desired metalliza­tion pattern thereon is coated with the epoxy based photoimageable material which has the properties of resisting concentrated KOH etching when the epoxy material is cured and also the property of adhering to the polyimide substrate and the metallized pattern after exposure to the KOH etch to provide a pas­sivation to the metallization. The process includes exposing the layer of photoimageable material to actinic radiation to selectively pattern the material, developing the patterned material to reveal the underlying polyimide to be etched, curing the re­maining material and etching the revealed polyimide material in concentrated KOH to remove the revealed polyimide. The remaining epoxy material is firmly adherent as a passivation layer for the metallization. Preferably the epoxy material consists essentially of from about 10% to about 80% by weight of a polyol resin which is a condensation product of epichloro­hydrin and bisphenol A having a molecular weight of between about 40,000 to 130,000, and between about 20% and 90% by weight of an epoxidized octafunctional bisphenol A formaldehyde novolak resin, having a molecular weight of between 4,000 to 10,000 and about 0.1 to about 15 parts by weight of resin of a cationic photoinitiator capable of initiating polymerization of the epoxidized resin system upon exposure to actinic radiation. The resin may optionally contain up to about 50% by weight of epoxidized di-glycidal ether of tetrabromo bisphenol A having a molecular weight of between about 600 and 2,500, if flame retardancy is required.

    摘要翻译: 蚀刻具有图案化的金属化的聚酰亚胺材料的方法,其中环氧树脂体系不仅提供用于蚀刻聚酰亚胺的蚀刻掩模,而且还提供覆盖聚酰亚胺基底上的金属化的所得钝化结构。 在其上具有期望的金属化图案的聚酰亚胺涂覆有环氧树脂基可光成像材料,其具有在环氧树脂材料固化时具有抵抗浓缩KOH蚀刻的性质,以及在暴露于KOH之后粘附到聚酰亚胺基底和金属化图案的性质 蚀刻以提供对金属化的钝化。 该方法包括将光致成像材料层暴露于光化辐射以选择性地图案化材料,显影图案化材料以露出待蚀刻的下面的聚酰亚胺,固化剩余的材料并在浓缩KOH中蚀刻显露的聚酰亚胺材料以除去显露的聚酰亚胺。 剩余的环氧树脂材料牢固粘附,作为金属化的钝化层。 优选地,环氧材料基本上由约10%至约80%重量的多元醇树脂组成,多元醇树脂是分子量为约40,000至130,000和约20%至90%之间的表氯醇和双酚A的缩合产物, 的环氧化八官能双酚A甲醛酚醛清漆树脂,其分子量在4,000至10,000至约0.1至约15重量份的阳离子光引发剂树脂之间,其能够在暴露于光化辐射下引发环氧化树脂体系的聚合 。 如果需要阻燃性,树脂可以任选地含有高达约50重量%的分子量为约600-2,500的四溴双酚A的环氧化二缩水甘油醚。

    Method of etching polyimides and resulting passivation structures
    2.
    发明公开
    Method of etching polyimides and resulting passivation structures 失效
    消除聚酰胺和结果钝化结构的方法

    公开(公告)号:EP0394638A3

    公开(公告)日:1992-07-15

    申请号:EP90103546.9

    申请日:1990-02-23

    IPC分类号: G03F7/40

    摘要: A method of etching polyimide material having metal­lization patterned thereon in which an epoxy resin system not only provides the etch mask for etching the polyimide but also provides a resulting passivation structure overlying the metallization on the polyimide substrate. The polyimide having a desired metalliza­tion pattern thereon is coated with the epoxy based photoimageable material which has the properties of resisting concentrated KOH etching when the epoxy material is cured and also the property of adhering to the polyimide substrate and the metallized pattern after exposure to the KOH etch to provide a pas­sivation to the metallization. The process includes exposing the layer of photoimageable material to actinic radiation to selectively pattern the material, developing the patterned material to reveal the underlying polyimide to be etched, curing the re­maining material and etching the revealed polyimide material in concentrated KOH to remove the revealed polyimide. The remaining epoxy material is firmly adherent as a passivation layer for the metallization. Preferably the epoxy material consists essentially of from about 10% to about 80% by weight of a polyol resin which is a condensation product of epichloro­hydrin and bisphenol A having a molecular weight of between about 40,000 to 130,000, and between about 20% and 90% by weight of an epoxidized octafunctional bisphenol A formaldehyde novolak resin, having a molecular weight of between 4,000 to 10,000 and about 0.1 to about 15 parts by weight of resin of a cationic photoinitiator capable of initiating polymerization of the epoxidized resin system upon exposure to actinic radiation. The resin may optionally contain up to about 50% by weight of epoxidized di-glycidal ether of tetrabromo bisphenol A having a molecular weight of between about 600 and 2,500, if flame retardancy is required.