公开(公告)号：EP0289642B1

公开(公告)日：1991-12-04

申请号：EP87106698.1

申请日：1987-05-08

申请人： International Business Machines Corporation

发明人： Van Zeghbroeck, Bart Jozef

IPC分类号： G11B7/24

CPC分类号： G11B7/0055 ,  G11B11/08

公开(公告)号：EP0406506A1

公开(公告)日：1991-01-09

申请号：EP89810515.0

申请日：1989-07-07

申请人： International Business Machines Corporation

发明人： Harder, Christoph Stephan, Dr. ,  Meier, Heinz Peter, Dr. ,  Van Zeghbroeck, Bart Jozef ,  Walter, Willi

IPC分类号： H01L33/00 ,  H01S3/025

CPC分类号： H01S5/028 ,  H01L27/15 ,  H01L31/173 ,  H01S5/0264

摘要： Opto-electronic light emitting device (30) epitaxially grown in III-V technology. It consists of a light emitting element (10), such as a diode laser or a LED, arranged back-to-back on a pn-junction diode (35), e.g., a PIN diode structure. A common middle layer (33) is transparent for the emitted wavelength and allows strong optical coupling (of at least 50 %) of the spontaneous isotropic radiation emitted by the light emitting element (10) to the diode (35) where the light is absorbed and recuperated for feedback to the light emitting element. The diode can be operated either as a photodiode or as a solar cell (by applying either a reverse- or a forward-bias voltage) resulting in regaining of either current or energy.

摘要翻译： 在III-V技术中外延生长的光电子发光器件（30）。 它由例如PIN二极管结构在pn结二极管（35）上背对背地布置的诸如二极管激光器或LED的发光元件（10）组成。 公共中间层（33）对于所发射的波长是透明的，并且允许由发光元件（10）发射到二极管（35）的自发各向同性辐射的强耦合（至少50％），其中光被吸收 并且恢复以用于反馈到发光元件。 二极管可以作为光电二极管或太阳能电池（通过施加反向或正向偏置电压）来操作，导致电流或能量的恢复。

公开(公告)号：EP0289642A1

公开(公告)日：1988-11-09

申请号：EP87106698.1

申请日：1987-05-08

申请人： International Business Machines Corporation

发明人： Van Zeghbroeck, Bart Jozef

IPC分类号： G11B7/24

CPC分类号： G11B7/0055 ,  G11B11/08

摘要： The erasable electro-optic storage disk for use in focused laser beam operated data handling systems compri­ses a semiconductor substrate (11) with a storage layer (14) arranged on top of it that is capable of trapping charge carriers. Electric contacts (15, 16) are connected to the semiconductor substrate and to the storage layer, respectively. An energy barrier (12-13) with associated depletion zone is formed in the substrate (11) near the interface with the storage layer (14). Upon simultaneous application of a control voltage to the contacts (15, 16) and of a focused laser beam (18) directed at a storage site (19), electron pairs are generated in the depletion zone, and charge carriers are transferred towards the interface. This causes a reduction of the depletion zone and thus of the voltage over the depletion zone, and an increase of the field in the storage layer (14), whereby charge carriers are injected into and trapped in the storage layer (14).

摘要翻译： 用于聚焦激光束操作数据处理系统的可擦除电光存储盘包括：半导体衬底（11），其具有布置在其顶部的能够捕获电荷载流子的存储层（14）。 电触点（15,16）分别连接到半导体衬底和存储层。 在与存储层（14）的界面附近的衬底（11）中形成具有相关耗尽区的能量势垒（12-13）。 当向触点（15,16）和指向存储位置（19）的聚焦激光束（18）同时施加控制电压时，在耗尽区域中产生电子对，并将电荷载体转移到界面 。 这导致耗尽区的减少，从而减少耗尽区上的电压，以及存储层（14）中的场的增加，由此电荷载流子被注入并被捕获在存储层（14）中。