摘要:
A positive-tone radiation-sensitive composition is used for a resist pattern-forming method that includes double exposure as a given step, and includes (B) a polymer that includes an acid-labile group and a crosslinkable group, (C) a photoacid generator, and (D) a solvent.
摘要:
A method of patterning using double exposure patterning in a liquid immersion lithographic process is provided. According to the method, the pattern formed in the first layer is made inactive to radiation applied to when forming a second layer pattern, whereby it is possible to form the second layer pattern while maintaining the first layer pattern as is without making it soluble in alkali. The patterning method comprises a step of forming a first pattern on a substrate using a first resist layer forming composition, a step of making the first pattern inactive, a step of forming a second pattern on a substrate on which a pattern has been formed using a second resist layer forming composition and exposing the second resist layer to radiation, and a step of developing the exposed resist layer to form a second pattern in the space area of the first pattern. The first resist layer forming composition contains a cross-linking agent which accelerates conversion of the first layer from positive-working to negative-working.