公开(公告)号：EP4430097A1

公开(公告)日：2024-09-18

申请号：EP22817567.5

申请日：2022-11-10

申请人： Merck Patent GmbH

发明人： BASKARAN, Durairaj ,  KANG, Namgoo ,  NG, Edward W.

IPC分类号： C08F220/30 ,  C09D133/10 ,  G03F7/004 ,  G03F7/26 ,  H01L21/02 ,  C08F8/12

CPC分类号： C08F220/30 ,  C09D133/10 ,  C08F8/12 ,  H01L21/0273 ,  G03F7/0002

公开(公告)号：EP3971946B1

公开(公告)日：2024-08-28

申请号：EP21783120.5

申请日：2021-06-15

IPC分类号： H01L21/027 ,  G03F7/095 ,  G03F7/16 ,  G03F7/20 ,  G03F7/38 ,  G03F7/40 ,  H01L21/311

CPC分类号： G03F7/095 ,  G03F7/168 ,  G03F7/38 ,  G03F7/2014 ,  G03F7/40 ,  H01L21/0272 ,  H01L21/0273 ,  H01L21/31144

公开(公告)号：EP3327752A1

公开(公告)日：2018-05-30

申请号：EP17202874.8

申请日：2017-11-21

申请人： Semiconductor Manufacturing International Corporation (Shanghai) ,  Semiconductor Manufacturing International Corporation (Beijing)

发明人： YU, Guobin ,  XU, Xiaoping

IPC分类号： H01L21/02 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/11531

CPC分类号： H01L29/7883 ,  H01L21/0214 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02247 ,  H01L21/02252 ,  H01L21/02332 ,  H01L21/0273 ,  H01L21/28273 ,  H01L21/823462 ,  H01L21/823857 ,  H01L27/11521 ,  H01L27/11531 ,  H01L29/0649 ,  H01L29/42324 ,  H01L29/42364 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66636 ,  H01L29/66825 ,  H01L29/7848

摘要： A semiconductor device and its manufacturing method are presented. The manufacturing method entails: providing a semiconductor substrate, wherein the semiconductor substrate comprises a first region and a second region that are mutually exclusive from one another, with a first oxide layer on the first and the second regions; conducting a nitriding process on the semiconductor substrate to form a nitride barrier layer on the first oxide layer on the first and the second regions; removing the first oxide layer on the second region; and conducting an oxidation process to form a second oxide layer on the second region.

公开(公告)号：EP3172247A4

公开(公告)日：2018-03-21

申请号：EP15824327

申请日：2015-07-22

申请人： CANON KK

发明人： ITO TOSHIKI ,  HONMA TAKESHI ,  YONEZAWA SHIORI ,  OTANI TOMONORI ,  IWASHITA KAZUMI

IPC分类号： G03F7/00 ,  C08F2/46 ,  C08F20/20 ,  G03F7/027 ,  G03F7/029 ,  H01L21/027 ,  H01L21/3065

CPC分类号： C08F220/18 ,  B05D3/06 ,  B05D3/12 ,  C08F2/48 ,  C08F222/10 ,  C08F222/1006 ,  C08F2222/102 ,  G02B1/04 ,  G03F7/0002 ,  G03F7/027 ,  G03F7/029 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/4846 ,  H05K3/06 ,  H05K3/064

摘要： A photocurable composition contains a polymerizable compound; and a photopolymerization initiator, in which the photocurable composition contains a compound represented by General Formula (1) shown below as the polymerizable compound, and in which, in General Formula (1), Ar represents a monovalent aromatic group which may have a substituent, R1 represents an alkyl group which may have a substituent or a hydrogen atom, R2 represents an alkyl group having (m + n) valences which may have a substituent, m is an integer of 2 or more, and n is an integer of 1 or more.

公开(公告)号：EP3040777B1

公开(公告)日：2018-03-14

申请号：EP14840214.2

申请日：2014-08-27

申请人： Nissan Chemical Industries, Ltd.

发明人： OHASHI, Tomoya ,  KIMURA, Shigeo ,  USUI, Yuki ,  OGATA, Hiroto

IPC分类号： G03F7/038 ,  G03F7/11 ,  G03F7/40 ,  G03F7/26 ,  H01L21/027 ,  C08F20/32 ,  C08F8/14

CPC分类号： H01L21/3086 ,  C08F8/14 ,  C08F220/32 ,  G03F7/038 ,  G03F7/094 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/31138 ,  H01L21/31144 ,  C08F220/26 ,  C08F220/14 ,  C08F220/18

摘要： The present invention provides a pattern forming method which uses a resist underlayer film having resistance to a basic aqueous hydrogen peroxide solution. A pattern forming method comprising: a first step of applying a resist underlayer film-forming composition containing a solvent and a polymer having a weight average molecular weight of 1,000 to 100,000 and an epoxy group on a semiconductor substrate that may have an inorganic film on the surface, followed by baking, to form a resist underlayer film; a second step of forming a resist pattern on the resist underlayer film; a third step of dry etching the resist underlayer film using the resist pattern as a mask to expose a surface of the inorganic film or the semiconductor substrate; and a forth step of wet etching the inorganic film or the semiconductor substrate using the dry-etched resist underlayer film as a mask and a basic aqueous hydrogen peroxide solution.

公开(公告)号：EP2506308B1

公开(公告)日：2017-09-13

申请号：EP12161178.4

申请日：2012-03-26

申请人： BOE Technology Group Co., Ltd.

发明人： Liu, Xiaodi ,  Sun, Li ,  Chen, Haijing

IPC分类号： H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L21/027 ,  H01L21/477 ,  H01L21/441 ,  H01L21/467

CPC分类号： H01L29/78693 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02631 ,  H01L21/0273 ,  H01L21/441 ,  H01L21/467 ,  H01L21/477 ,  H01L29/66969 ,  H01L29/78618

公开(公告)号：EP1837915B1

公开(公告)日：2017-07-05

申请号：EP07104449.9

申请日：2007-03-20

申请人： NISSAN MOTOR CO., LTD.

发明人： Shimoida, Yoshio ,  Hayashi, Tetsuya ,  Tanaka, Hideaki ,  Yamagami, Shigeharu ,  Hoshi, Masakatsu

IPC分类号： H01L29/78 ,  H01L21/336 ,  H01L29/267 ,  H01L29/423 ,  H01L21/027 ,  H01L21/3213 ,  H01L29/16

CPC分类号： H01L29/7828 ,  H01L21/0273 ,  H01L21/32139 ,  H01L29/1608 ,  H01L29/267 ,  H01L29/4236 ,  H01L29/66068

公开(公告)号：EP3069377A4

公开(公告)日：2017-05-31

申请号：EP14862401

申请日：2014-11-13

申请人： UNIV MICHIGAN TECH

发明人： DAUNAIS THOMAS ,  BERGSTROM PAUL L

IPC分类号： B82Y40/00 ,  B82Y10/00 ,  G01N27/12 ,  G01N27/414 ,  G01N33/543 ,  G01N33/552 ,  G01N33/569 ,  H01L21/00 ,  H01L21/02 ,  H01L21/027 ,  H01L21/306 ,  H01L21/308 ,  H01L21/311 ,  H01L29/66 ,  H01L29/775

CPC分类号： G01N33/54386 ,  B82Y10/00 ,  B82Y40/00 ,  G01N27/127 ,  G01N27/4146 ,  G01N33/552 ,  G01N33/56916 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02236 ,  H01L21/02255 ,  H01L21/02266 ,  H01L21/0273 ,  H01L21/30604 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/311 ,  H01L29/0673 ,  H01L29/16 ,  H01L29/66439 ,  H01L29/775

公开(公告)号：EP3149764A1

公开(公告)日：2017-04-05

申请号：EP15732320.5

申请日：2015-05-21

申请人： Commissariat à l'Énergie Atomique et aux Énergies Alternatives

发明人： BELLEDENT, Jérôme ,  PIMENTA BARROS, Patricia

IPC分类号： H01L21/027 ,  H01L21/768 ,  H01L21/311

CPC分类号： H01L21/76816 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/31144 ,  H01L21/76877

摘要： The invention relates to a method for patterning the surface of a substrate by self-assembly of block copolymers which includes the following steps: forming a first mask (20) defining at least two areas to be plated (21a, 21c) on the surface of the substrate; forming an assembly guide (23a) above the first mask (20), such that the assembly guide defines a surface covering two contact areas (22a, 22c) belonging respectively to the two areas to be plated (21a, 21c); depositing a block-copolymer layer on said surface; reorganising the block-copolymer layer; removing one of the phases (24) of the reorganised block-copolymer layer, resulting in a plurality of holes extending in the block-copolymer layer above the two contact areas (22a, 22c) and a portion of the first mask (20) arranged between the two contact areas (22a, 22c); widening the holes of the block-copolymer layer by etching, until a continuous trench (25a) is formed above the two contact areas (22a, 22c) and said portion of the first mask (20); transferring the continuous trench (25a) through the first mask (20) onto the surface of the substrate such as to form patterns that correspond to the contact areas (22a, 22c).

摘要翻译： 制造图案的方法包括在衬底表面上形成限定要被金属化的至少两个区域的第一掩模; 在所述第一掩模上形成组装引导件，所述组件引导件限定覆盖分别属于要金属化的两个区域的两个接触区域的表面; 在表面上沉积嵌段共聚物层; 重组嵌段共聚物层; 消除重组的嵌段共聚物层的一个相，导致在两个接触区域之上延伸到嵌段共聚物层中的多个孔和布置在两个接触区域之间的第一掩模的一部分; 扩大嵌段共聚物层的孔，直到在两个接触区域和第一掩模的部分上形成连续的沟槽; 通过第一掩模将连续沟槽转移到衬底的表面上以形成对应于接触区域的图案。

公开(公告)号：EP3040777A1

公开(公告)日：2016-07-06

申请号：EP14840214.2

申请日：2014-08-27

申请人： Nissan Chemical Industries, Ltd.

发明人： OHASHI, Tomoya ,  KIMURA, Shigeo ,  USUI, Yuki ,  OGATA, Hiroto

IPC分类号： G03F7/11 ,  C08F20/32 ,  G03F7/26 ,  G03F7/40 ,  H01L21/027 ,  C08F8/14

CPC分类号： H01L21/3086 ,  C08F8/14 ,  C08F220/32 ,  G03F7/038 ,  G03F7/094 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/31138 ,  H01L21/31144 ,  C08F220/26 ,  C08F220/14 ,  C08F220/18

摘要： The present invention provides a pattern forming method which uses a resist underlayer film having resistance to a basic aqueous hydrogen peroxide solution. A pattern forming method comprising: a first step of applying a resist underlayer film-forming composition containing a solvent and a polymer having a weight average molecular weight of 1,000 to 100,000 and an epoxy group on a semiconductor substrate that may have an inorganic film on the surface, followed by baking, to form a resist underlayer film; a second step of forming a resist pattern on the resist underlayer film; a third step of dry etching the resist underlayer film using the resist pattern as a mask to expose a surface of the inorganic film or the semiconductor substrate; and a forth step of wet etching the inorganic film or the semiconductor substrate using the dry-etched resist underlayer film as a mask and a basic aqueous hydrogen peroxide solution.