摘要:
A resist pattern formation method includes (1) a step of forming a first resist pattern which includes forming a first resist layer on a substrate, selectively exposing the first resist layer to radiation through a mask, and developing the exposed first resist layer, (2) a step of insolubilizing the first resist pattern by coating the first resist pattern with a resist pattern insolubilizing resin composition, baking or curing with UV, and developing the resist pattern insolubilizing resin composition, (3) a step of forming a second resist layer on the insolubilized resist pattern and selectively exposing the second resist layer to radiation through a mask, and (4) a step of developing the exposed second resist layer to form a second resist pattern.
摘要:
To provide a resist which is excellent in the solubility in a resist solvent and little dependent on baking temperature and can form developed patterns reduced in line edge roughness. An acrylic polymer characterized by comprising units of the general formula (1), units of general formula (2), and units of general formula (3) and/or units of general formula (4), wherein R, R', R" and R‴ are each hydrogen, methyl, or trifluoromethyl; R 1 is hydrogen, C 1-4 linear or branched alkyl, alkoxy, or C 1-4 linear or branched fluoroalkyl; X is a C 7-20 polycyclic aliphatic hydrocarbon group consisting of carbon atoms and hydrogen atoms; R 2 and R 3 are each independently C 1-4 linear or branched alkyl; R 4 is a C 4-20 alicyclic hydrocarbon group; R 5 is C 1-4 linear or branched alkyl; and R 6 and R 7 are each hydrogen or C 1-4 linear or branched alkyl.
摘要翻译:提供一种在抗蚀剂溶剂中溶解性优异且几乎不依赖于烘烤温度的抗蚀剂,并且可以形成线边缘粗糙度降低的显影图案。 一种丙烯酸类聚合物,其特征在于包含通式(1)的单元,通式(2)的单元和通式(3)的单元和/或通式(4)的单元,其中R,R',R“ R 1是氢,甲基或三氟甲基; R 1是氢,C 1-4直链或支链烷基,烷氧基或C 1-4直链或支链氟烷基; X是C 7-20多环脂族烃基 由碳原子和氢原子组成; R 2和R 3各自独立地为C 1-4直链或支链烷基; R 4为C 4-20脂环族烃基; R 5为C 1-4直链或支链烷基;和 R 6和R 7各自为氢或C 1-4直链或支链烷基。
摘要:
A resin composition which can increase the pattern shrink rate while maintaining the advantages of capability of effectually and precisely micronizing the resist pattern gaps irrespective of the surface conditions of the substrate and forming resist patterns exceeding the wavelength limit economically at low cost in a good condition having only small defects, and a method of efficiently forming a micropattern using the resin composition are disclosed. The resin composition for forming a micropattern includes a hydroxyl group-containing resin, a crosslinking component, and an alcohol solvent which contains an alcohol and not more than 10 mass% of water relative to the total solvent. The crosslinking component includes a compound having two or more acryloyloxy groups in the molecule.
摘要:
A method of patterning using double exposure patterning in a liquid immersion lithographic process is provided. According to the method, the pattern formed in the first layer is made inactive to radiation applied to when forming a second layer pattern, whereby it is possible to form the second layer pattern while maintaining the first layer pattern as is without making it soluble in alkali. The patterning method comprises a step of forming a first pattern on a substrate using a first resist layer forming composition, a step of making the first pattern inactive, a step of forming a second pattern on a substrate on which a pattern has been formed using a second resist layer forming composition and exposing the second resist layer to radiation, and a step of developing the exposed resist layer to form a second pattern in the space area of the first pattern. The first resist layer forming composition contains a cross-linking agent which accelerates conversion of the first layer from positive-working to negative-working.
摘要:
[PROBLEMS] To provide a resist which is excellent in the solubility in a resist solvent and little dependent on baking temperature and can form developed patterns reduced in line edge roughness. [MEANS FOR SOLVING PROBLEMS] An acrylic polymer characterized by comprising units of the general formula (1), units of general formula (2), and units of general formula (3) and/or units of general formula (4), wherein R, R', R'' and R''' are each hydrogen, methyl, or trifluoromethyl; R is hydrogen, C1-4 linear or branched alkyl, alkoxy, or C1-4 linear or branched fluoroalkyl; X is a C7-20 polycyclic aliphatic hydrocarbon group consisting of carbon atoms and hydrogen atoms; R and R are each independently C1-4 linear or branched alkyl; R is a C4-20 alicyclic hydrocarbon group; R is C1-4 linear or branched alkyl; and R and R are each hydrogen or C1-4 linear or branched alkyl.
摘要:
A radiation-sensitive resin composition excelling in basic properties as a resist such as sensitivity, resolution, and the like, having a wide depth of focus (DOF) to both a line-and-space pattern and an isolated space pattern, and exhibiting a minimal line width change due to fluctuation of a bake temperature, and having a small line width limit in which the line pattern destroying phenomenon does not occur, and a lactone-containing copolymer useful as a resin component of the composition are provided. The lactone-containig copolymer is represented by a copolymer of the following compounds (1-1), (2-1), and (3-1).
The radiation-sensitive resin composition comprises (a) the lactone-containing copolymer and (b) a photoacid generator.
摘要:
A radiation-sensitive resin composition for liquid immersion lithography which produces an excellent pattern profile, exhibits excellent resolution, provides sufficient focal depth allowance, and elutes only the minimal amount in the liquid when brought in contact with the liquid during exposure to radiation. The radiation-sensitive resin composition forms a photoresist film in liquid immersion lithography, in which radiation is emitted through a liquid for use in liquid immersion lithography having a refractive index larger than 1.44 and smaller than 1.85 at a wavelength of 193 nm, existing between a lens and a photoresist, the composition comprising a resin having a recurring unit with a lactone structure, which is insoluble or scarcely soluble in alkali, but becomes soluble in alkali by the action of an acid, and a radiation-sensitive acid generator.
摘要:
A radiation-sensitive resin composition comprising an acid-labile group-containing resin obtained by living radical polymerization having a specific structure which is insoluble or scarcely soluble in alkali, but becomes alkali soluble by the action of an acid, and a photoacid generator, wherein the ratio of weight average molecular weight to number average molecular weight (weight average molecular weight/number average molecular weight) of the acid-labile group-containing-resin is smaller than 1.5.