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    Metal-coating material, method for protecting metal, and light emitting device
    1.
    发明公开
    Metal-coating material, method for protecting metal, and light emitting device 审中-公开
    Metallbeschichtungsmaterial，Verfahren zum Schutz von Metall，und lichtemittierende Vorrichtung

    公开(公告)号：EP2085411A2

    公开(公告)日：2009-08-05

    申请号：EP09150941.4

    申请日：2009-01-20

    申请人： JSR Corporation

    发明人： Kanamori, Tarou ,  Yoshii, Kimihiko ,  Tazaki, Taichi ,  Seko, Tomoaki ,  Motonari, Masayuki

    IPC分类号： C08F291/04 ,  C09D143/04 ,  C08G77/442 ,  C09D183/10 ,  C08K3/22 ,  C08K3/36 ,  C23C26/00 ,  C23C30/00

    CPC分类号： C09D143/04 ,  C09D183/04 ,  C23C26/00 ,  C23C30/00

    摘要： Provided is a metal-coating material excellent in sulfur barrier property and transparency, a method for protecting a metal using the metal-coating material, and a light emitting device permitting high luminance and long life. The metal-coating material contains a polymer (A) obtained by subjecting at least one silane compound (a1) selected from the group consisting of at least one organosilane represented by the formula (1) : R 1 n Si(OR 2 ) 4-n , wherein R 1 means a monovalent organic group having 1 to 8 carbon atoms, with the proviso that when two organic groups are present, the groups may be the same or different from each other, R 2 denotes, independently of each other, an alkyl group having 1 to 5 carbon atoms or an acyl group having 1 to 6 carbon atoms, and n is an integer of 0 to 2, a hydrolyzate of the organosilane and a condensate of the organosilane, and a polymer (a2) having a silyl group containing a silicon atom bonded to a hydrolyzable group and/or a hydroxyl group to a hydrolyzing and condensation reaction.

    摘要翻译： 提供了具有优良的硫阻隔性和透明性的金属涂层材料，使用金属涂覆材料保护金属的方法，以及允许高亮度和长寿命的发光器件。 金属涂层材料含有通过使至少一种选自由式（1）表示的至少一种有机硅烷组成的组中的至少一种硅烷化合物（a1）：R 1 n Si（OR 2）4 - n，其中R 1表示具有1至8个碳原子的一价有机基团，条件是当存在两个有机基团时，基团可以相同或不同，R 2彼此独立地是 具有1至5个碳原子的烷基或具有1至6个碳原子的酰基，n为0-2的整数，有机硅烷的水解产物和有机硅烷的缩合物和具有甲硅烷基的聚合物（a2） 含有与可水解基团和/或羟基键合的硅原子进行水解和缩合反应的基团。

    Aqueous dispersion composition for chemical mechanical polishing for use in manufacture of semiconductor devices
    3.
    发明公开
    Aqueous dispersion composition for chemical mechanical polishing for use in manufacture of semiconductor devices 有权
    的水性分散体组合物中使用的化学机械抛光方法中使用的半导体器件的制造

    公开(公告)号：EP1081200A1

    公开(公告)日：2001-03-07

    申请号：EP00119200.4

    申请日：2000-09-05

    申请人： JSR Corporation

    发明人： Motonari, Masayuki ,  Hattori, Masayuki ,  Kawahashi, Nobuo

    IPC分类号： C09G1/02

    CPC分类号： C09G1/02 ,  H01L21/3212

    摘要： The present invention provides an aqueous dispersion composition for chemical mechanical polishing which is useful for the manufacture of semiconductor devices, and which for polishing of different types of working films and barrier metal layers formed on semiconductor substrates, can achieve efficient polishing particularly of barrier metal surfaces and can give adequately flattened and high precision finished surfaces. The aqueous dispersion composition for chemical mechanical polishing has properties such that, when polishing a copper film, a tantalum layer and/or tantalum nitride layer and an insulating film under the same conditions, the ratio (R Cu /R Ta ) between the polishing rate of the copper film (R Cu ) and the polishing rate of the tantalum layer and/or tantalum nitride layer (R Ta ) is no greater than 1/20, and the ratio (R Cu /R In ) between the polishing rate of the copper film (R Cu ) and the polishing rate of the insulating film (R In ) is from 5 to 1/5. R Cu /R Ta is preferably no greater than 1/30, especially no greater than 1/40 and most preferably no greater than 1/50, while R Cu /R In is preferably 4-1/4, especially 3-1/3 and more preferably 2-1/2.

    摘要翻译： 本发明提供了关于用于化学机械抛光wässrige分散组合物中所有这对于不同类型的形成在半导体基片上的工作膜和阻挡金属层的抛光用于半导体器件的制造中哪些是有用的，并且，可以实现高效的抛光特别的阻挡金属表面 并能给出充分进行平坦化和高精度完成表面。 用于化学机械抛光的wässrige分散体组合物具有以下特性检查的是，当抛光铜电影，在相同条件下钽层和/或氮化钽层和在绝缘电影，的抛光速率之间的比率（R铜/ R Ta）的 铜电影（R Cu）的和钽层和/或氮化钽层（R Ta）的的抛光速率是不大于1.20，和（R铜/ RIN）的铜成膜的研磨速度（R Cu）的和之间的比 绝缘膜 - （RIN）的研磨速度为5〜5.1。 ř的Cu / R Ta为优选不大于爱尤其是不1/40大于1.30，更大，最优选不大于1/50，而[R铜/ RIN优选4-1 / 4，爱尤其3-1 / 3，更优选 2-1 / 2。

    Aqueous dispersion slurry of inorganic particles and production methods thereof
    5.
    发明公开
    Aqueous dispersion slurry of inorganic particles and production methods thereof 审中-公开
    WässerigeDispersionsaufschlämmunganorganischer Partikel und dessen Herstellung

    公开(公告)号：EP0899005A1

    公开(公告)日：1999-03-03

    申请号：EP98115525.2

    申请日：1998-08-18

    申请人： JSR Corporation

    发明人： Iio, Akira Room 6B ,  Hattori, Masayuki ,  Motonari, Masayuki

    IPC分类号： B01F7/30 ,  B01D29/56 ,  C09G1/02 ,  C09K3/14 ,  B24B37/04

    CPC分类号： B24B37/04 ,  B01F3/1221 ,  B01F3/1271 ,  B01F7/00991 ,  B01F7/30 ,  B01F2215/0031 ,  B01F2215/005 ,  B24B57/02 ,  C09D17/004 ,  C09K3/1463

    摘要： The present invention provides aqueous dispersion slurry of inorganic particles which is so stable as not to increase in viscosity, gel or sediment even if stored for a long time and therefore can be used as raw materials for, for example, cosmetics, paint, coating materials and lapping slurry for semiconductor wafers, and production method of such aqueous dispersion slurry.
    The aqueous dispersion slurry according to the present invention has the number of particles whose a particle diameter of 1.3 µm or more is 180,000 or less per mL in terms of 30wt% in concentration, and the average particle diameter thereof is in a range of 0.05 - 0.9 µm. The number of particles having a particle diameter of 1.3 µm or more is counted by using Particle Sensor KS-60, which is a light extinction type sensor for detecting particles, and Particle Counter KL-11, which is a particle counter, both of which made by the same manufacturer, Rion Electro Corp. The average particle diameter is measured by using Laser Particle Analyzer System Par-III made by Otsuka Denshi Co., Ltd.

    摘要翻译： 本发明提供了无机颗粒的水分散体浆料，其如此稳定，即使长时间储存​​也不会增加粘度，凝胶或沉淀物，因此可用作例如化妆品，油漆，涂料的原料 和研磨用于半导体晶片的浆料，以及这种水分散浆料的制造方法。 本发明的水性分散体浆料的粒径为1.3μm以上的颗粒数为30,000重量％，浓度为18万个以下，平均粒径为0.05以下 - 0.9亩。 通过使用作为用于检测粒子的消光型传感器的粒子传感器KS-60和作为粒子计数器的粒子计数器KL-11来计数粒径为1.3μm以上的粒子数， 由相同的制造商Rion Electro Corp.制造。平均粒径通过使用由大冢电机株式会社制造的激光粒子分析仪系统Par-III测量。

    Metal-coating material, method for protecting metal, and light emitting device
    7.
    发明公开
    Metal-coating material, method for protecting metal, and light emitting device 审中-公开
    金属涂层材料，金属保护的方法，以及发光器件

    公开(公告)号：EP2085411A3

    公开(公告)日：2009-08-26

    申请号：EP09150941.4

    申请日：2009-01-20

    申请人： JSR Corporation

    发明人： Kanamori, Tarou ,  Yoshii, Kimihiko ,  Tazaki, Taichi ,  Seko, Tomoaki ,  Motonari, Masayuki

    IPC分类号： C08F291/04 ,  C09D143/04 ,  C08G77/442 ,  C09D183/10 ,  C08K3/22 ,  C08K3/36 ,  C23C26/00 ,  C23C30/00

    CPC分类号： C09D143/04 ,  C09D183/04 ,  C23C26/00 ,  C23C30/00

    摘要： Provided is a metal-coating material excellent in sulfur barrier property and transparency, a method for protecting a metal using the metal-coating material, and a light emitting device permitting high luminance and long life. The metal-coating material contains a polymer (A) obtained by subjecting at least one silane compound (a1) selected from the group consisting of at least one organosilane represented by the formula (1) : R 1 n Si(OR 2 ) 4-n , wherein R 1 means a monovalent organic group having 1 to 8 carbon atoms, with the proviso that when two organic groups are present, the groups may be the same or different from each other, R 2 denotes, independently of each other, an alkyl group having 1 to 5 carbon atoms or an acyl group having 1 to 6 carbon atoms, and n is an integer of 0 to 2, a hydrolyzate of the organosilane and a condensate of the organosilane, and a polymer (a2) having a silyl group containing a silicon atom bonded to a hydrolyzable group and/or a hydroxyl group to a hydrolyzing and condensation reaction.

    Chemical mechanical polishing pad
    8.
    发明公开
    Chemical mechanical polishing pad 有权
    Chemisch机械师Polierpad

    公开(公告)号：EP2090401A1

    公开(公告)日：2009-08-19

    申请号：EP09152255.7

    申请日：2009-02-06

    申请人： JSR Corporation

    发明人： Motonari, Masayuki ,  Ueno, Tomikazu ,  Yamamoto, Masahiro ,  Tai, Yuugo ,  Miyauchi, Hiroyuki

    IPC分类号： B24B37/04 ,  B24D13/14

    CPC分类号： B24B37/26

    摘要： A chemical mechanical polishing pad used for chemical mechanical polishing comprises a polishing surface, a non-polishing surface that is provided opposite to the polishing surface, a side surface that connects an outer edge of the polishing surface and an outer edge of the non-polishing surface, and a plurality of grooves formed in the polishing surface. The side surface has a slope surface that is connected to the polishing surface, and a depth of the grooves is equal to or smaller than a height of the slope surface.

    摘要翻译： 用于化学机械抛光的化学机械抛光垫包括抛光表面，与抛光表面相对设置的非抛光表面，连接研磨表面的外边缘的侧表面和非抛光的外边缘 表面和形成在抛光表面中的多个槽。 侧表面具有连接到抛光表面的倾斜表面，并且凹槽的深度等于或小于倾斜表面的高度。

    Process for chemical mechanical polishing of semiconductor substrate and aqueous dispersion for chemical mechanical polishing
    9.
    发明公开
    Process for chemical mechanical polishing of semiconductor substrate and aqueous dispersion for chemical mechanical polishing 审中-公开
    一种用于Hableitersubstraten进行化学机械抛光和水分散体用于化学机械抛光的方法，

    公开(公告)号：EP1333476A2

    公开(公告)日：2003-08-06

    申请号：EP03001656.2

    申请日：2003-01-24

    申请人： JSR Corporation

    发明人： Konno, Tomohisa ,  Motonari, Masayuki ,  Hattori, Masayuki ,  Kawahashi, Nobuo

    IPC分类号： H01L21/321 ,  C09G1/02

    CPC分类号： C09G1/02 ,  H01L21/3212

    摘要： The object of the present invention is to provide a process for chemical mechanical polishing of semiconductor substrate that is particularly useful for chemical mechanical polishing a wafer having a wiring pattern and an insulating layer having a low dielectric constant is formed between wiring patterns, interlayers in the case of a multi-layer wiring and the like in the process of producing a semiconductor device, and an aqueous dispersion for chemical mechanical polishing which is used in this process. The process for chemical mechanical polishing of a semiconductor substrate of the present invention is that a surface to be polished of the semiconductor substrate is polished under conditions of a rotation speed of a polishing table fixing a polishing pad at the range from 50 to 200 rpm and a pressing pressure of the semiconductor substrate fixed to a polishing head against a polishing pad at the range from 700 to 18,000Pa, by using an aqueous dispersion for chemical mechanical polishing comprising an abrasive and at least one compound selected from the group consisting of polycarboxylic acid having a heterocycle and anhydride thereof, and the polishing pad.