公开(公告)号：EP1737044B1

公开(公告)日：2014-12-10

申请号：EP05719601.6

申请日：2005-02-28

Applicant: Japan Science and Technology Agency

Inventor： HOSONO, HIDEO ,  HIRANO, MASAHIRO ,  OTA, HIROMICHI ,  KAMIYA, TOSHIO Room 207 Monarch-Mizonokuchi III ,  NOMURA, KENJI

IPC: H01L29/786 ,  G02F1/1345 ,  G02F1/1368 ,  H01L21/363 ,  C23C14/00 ,  C23C14/08 ,  C23C14/34 ,  H01L21/02 ,  C23C14/28 ,  H01L27/12

CPC classification number: H01L29/78696 ,  C23C14/0021 ,  C23C14/086 ,  C23C14/28 ,  C23C14/3414 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78693

Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10 18 /cm 3 , and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 10 18 /cm 3 is used in the channel layer 2.

公开(公告)号：EP1737044A1

公开(公告)日：2006-12-27

申请号：EP05719601.6

申请日：2005-02-28

Applicant: Japan Science and Technology Agency

Inventor： HOSONO, HIDEO ,  HIRANO, MASAHIRO ,  OTA, HIROMICHI Room 302, Dream-coat ,  KAMIYA, TOSHIO Room 207 Monarch-Mizonokuchi III ,  NOMURA, KENJI

IPC: H01L29/786 ,  G02F1/1345 ,  G02F1/1368 ,  H01L21/363

CPC classification number: H01L29/78696 ,  C23C14/0021 ,  C23C14/086 ,  C23C14/28 ,  C23C14/3414 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78693

Abstract: The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10 18 /cm 3 , and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 10 18 /cm 3 is used in the channel layer 2.

Abstract translation: 本发明涉及使用该无定形氧化物的无定形氧化物和薄膜晶体管。 特别地，本发明提供了电子载流子浓度小于10 18 / cm 3的非晶氧化物和使用这种无定形氧化物的薄膜晶体管。 在具有源电极6，漏极5，栅电极4，栅极绝缘膜3和沟道层2的薄膜晶体管中，使用电子载流子浓度小于10 18 / cm 3的非晶氧化物 在通道层2中。