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    SUBSTRATE WITH ORGANIC THIN FILM, TRANSISTOR USING SAME, AND METHODS FOR PRODUCING THOSE
    1.
    发明公开
    SUBSTRATE WITH ORGANIC THIN FILM, TRANSISTOR USING SAME, AND METHODS FOR PRODUCING THOSE 有权
    SUBSTRAT MIT ORGANISCHEMDÜNNFILMUND TRANSISD DAMIT

    公开(公告)号：EP1737045A1

    公开(公告)日：2006-12-27

    申请号：EP05721687.1

    申请日：2005-03-24

    Applicant: Japan Science and Technology Agency

    Inventor： KOINUMA, Hideomi ,  ITAKA, Kenji ,  YAMASHIRO, Mitsugu

    IPC: H01L29/786 ,  H01L51/00

    CPC classification number: H01L51/0012 ,  B82Y10/00 ,  H01L51/0046 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/0562 ,  Y10T428/31504

    Abstract: A substrate having organic thin film capable of growing two dimensionally such organic thin film as C 60 and a transistor using the same are constituted with a substrate (1) having organic thin film by sequentially depositing a buffer layer (3) and organic thin film (4) on the substrate (2), and with the buffer layer orienting the organic thin film (4). A layer easily oriented with the substrate (2) and the buffer layer (3) may be inserted between the substrate (2) and the buffer layer (3). A sapphire substrate as the substrate (2), pentacene or pentacene fluoride as the buffer layer (3), and C 60 or rubrene as the organic thin film (4) may be used, thereby C 60 or rubrene two dimensional thin film of high quality can be obtained. By using such a substrate (1) having organic thin film, a field effect transistor of high quality can be realized.

    Abstract translation: 具有能够二维生长的有机薄膜的基板，如C 60所示的有机薄膜和使用其的晶体管由具有有机薄膜的基板（1）构成，该基板通过依次沉积缓冲层（3）和有机薄膜 4），并且缓冲层定向有机薄膜（4）。 可以在衬底（2）和缓冲层（3）之间插入容易与衬底（2）和缓冲层（3）取向的层。 可以使用作为基板（2）的蓝宝石基板，作为缓冲层（3）的并五苯或并五苯，作为有机薄膜（4）的C 60或红荧烯，由此可以使用C 60或红荧烯二维薄膜 可以获得质量。 通过使用具有有机薄膜的这种基板（1），可以实现高品质的场效应晶体管。

    METHOD FOR MANUFACTURING IN-PLANE LATTICE CONSTANT ADJUSTING SUBSTRATE AND IN-PLANE LATTICE CONSTANT ADJUSTING SUBSTRATE
    3.
    发明公开
    METHOD FOR MANUFACTURING IN-PLANE LATTICE CONSTANT ADJUSTING SUBSTRATE AND IN-PLANE LATTICE CONSTANT ADJUSTING SUBSTRATE 审中-公开
    方法制备基片以调整平面晶格常数和基板设置平面晶格常数

    公开(公告)号：EP1437427A1

    公开(公告)日：2004-07-14

    申请号：EP02762816.3

    申请日：2002-08-21

    Applicant: Japan Science and Technology Agency

    Inventor： KOINUMA, Hideomi ,  KAWASAKI, Masashi ,  FUKUMURA, Tomoteru ,  TERAI, Kota

    IPC: C30B33/02 ,  C30B29/32

    CPC classification number: C30B25/18 ,  C30B23/025 ,  C30B29/32 ,  C30B33/02

    Abstract: A method of adjusting the in-plane lattice constant of a substrate and an in-plane lattice constant adjusted substrate are provided. A crystalline substrate (1) made of SrTiO 3 is formed at a first preestablished temperature thereon with a first epitaxial thin film (2) made of a first material, e. g., BaTiO 3 , and then on the first epitaxial thin film (2) with a second epitaxial thin film (6) made of a second material, e. g., BaxSr 1-x TiO 3 (where 0

    Abstract translation: 调整基片的面内晶格常数和面内晶格常数调整基材是游离缺失盘。 第一外延薄膜（2）上形成的第一物质，例如 的BaTiO 3，上在预定温度的SrTiO 3Crystal（1）的底物。 第二外延薄膜（6）被形成，在所述第一薄膜（2），所述第一物质和包含第一物质和第三物质以预定的组成比形成与所述第一物质的固体溶液的第二物质的， EC 的Ba 1-x的TiO 3 XSR（为0x1）。 在外延薄膜在第二预定温度进行热处理。 错位（4）通过热处理引入，并且所述第二外延成膜（6）的晶格常数是放宽到近似于第二物质的块状晶体的晶格常数的值。 通过确定性采矿中第二物质的第三物质的组成比x，期望的面内晶格常数实现。

    MASKING MECHANISM FOR FILM-FORMING DEVICE
    6.
    发明授权
    MASKING MECHANISM FOR FILM-FORMING DEVICE 有权
    掩蔽机制由于F R成膜装置

    公开(公告)号：EP1541706B1

    公开(公告)日：2012-05-30

    申请号：EP03797681.8

    申请日：2003-09-19

    Applicant: Japan Science and Technology Agency

    Inventor： KOINUMA, Hideomi ,  YAMAMOTO, Yukio ,  MATSUMOTO, Yuji ,  TAKAHASHI, Ryota

    IPC: C23C14/04 ,  C23C14/24

    CPC classification number: C23C14/044

    Abstract: A masking mechanism for a film forming device, comprising a mask (11) having a first signal acting edge (11a), a second signal acting edge (11b), and a third signal acting edge (11c) and a drive device for moving the mask (11) in a uniaxial direction (A) relative to a substrate (12), wherein three-component thin-films having film thickness gradient directions equally spaced by 120°are overlapped on each other by depositing deposited substances for the edges in a same substrate area while the mask (11) is being moved at a specified speed in the uniaxial direction (A) to form a thin-film (13) with a ternary phase diagram.

    METHOD OF SOLID-PHASE FLUX EPITAXY GROWTH
    9.
    发明公开
    METHOD OF SOLID-PHASE FLUX EPITAXY GROWTH 审中-公开
    VERFAHREN ZUM EPITAKTISCHEN AUFWACHSEN MIT FESTEM FLUSSMITTEL

    公开(公告)号：EP1736570A1

    公开(公告)日：2006-12-27

    申请号：EP05721569.1

    申请日：2005-03-22

    Applicant: Japan Science and Technology Agency

    Inventor： KOINUMA, Hideomi ,  MATSUMOTO, Yuji; ,  TAKAHASHI, Ryota

    IPC: C30B3/00 ,  C30B29/22 ,  C30B29/30 ,  C30B29/32 ,  H01L21/316 ,  H01L27/105

    CPC classification number: C30B9/08 ,  C30B3/00 ,  C30B19/02 ,  C30B29/22 ,  C30B29/30 ,  C30B29/32 ,  H01L21/3147 ,  H01L21/31691

    Abstract: A flux assisted solid phase epitaxy that can make a thin film having a crystalline perfection comparable with that of a bulk crystal and at a reduced cost is provided in which an amorphous film of a mixture of an objective substance to be grown epitaxially and a flux of a substance producing a eutectic with the objective substance but not producing any compound therewith is deposited on a substrate at a temperature less than a eutectic point of the substances, and the substrate is heat-treated at a temperature not less than the eutectic point of the objective and flux substances. A solid phase reaction, namely solid phase diffusion causes the objective and flux substances to be mixed together to form a liquid phase in their eutectic state from which the objective substance precipitates and epitaxially grows on the substrate.

    Abstract translation: 提供能够使具有与本体晶体相当的结晶完全性的薄膜并且以降低的成本制成的助熔剂固相外延，其中外延生长的目标物质的混合物的非晶膜和 与目标物质共晶而不产生任何化合物的物质在低于该物质的共晶点的温度下沉积在基板上，并且在不低于该物质的共晶点的温度下对该基板进行热处理 客观和通量物质。 固相反应，即固相扩散，使目标物和物质物质混合在一起，形成其共晶状态的液相，目标物质从该物质析出并外延生长在基底上。

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