公开(公告)号：EP2031030A1

公开(公告)日：2009-03-04

申请号：EP07744817.3

申请日：2007-06-06

申请人： Jemco Inc. ,  Mitsubishi Materials Corporation ,  Dai Nippon Toryo Co., Ltd.

发明人： MUROTA, Masamichi ,  IKEDA, Hiroshi ,  OMURA, Kunio ,  MUROUCHI, Masato ,  HAYASHI, Kenji ,  MIZOGUCHI, Daigou ,  MURAKAMI, Masaaki

IPC分类号： C09D201/00 ,  C09D5/24 ,  C09D7/12 ,  G02B1/10 ,  H01B13/00 ,  H01B5/14

CPC分类号： G02B1/16 ,  C09D5/24 ,  C09D11/52 ,  G02B1/116

摘要： Through employment of a binder component, tin hydroxide powder serving as a conductive powder, and a high-refractive index powder; through dispersal of tin hydroxide powder and light-transmission-ensuring microparticles in a binder component at a predetermined ratio; and through employment of a specific binder component and, as a conductive powder, tin hydroxide powder and a conductive powder other than tin hydroxide powder at a predetermined ratio, there can be provided a composition which can form a transparent conductive film that exhibits excellent antistatic effect, and has very high visible light transmittance and provides transmitted images with natural hue by virtue of no color absorption wherein, if desired, the film also exhibits excellent scratch resistance and high antiglare effect, or the refractive index of the film can be controlled; such a transparent conductive film, and a display having such a transparent conductive film on a screen thereof.

摘要翻译： 通过采用粘合剂成分的，作为导电性粉末和高折射率粉末氢氧化锡粉末; 通过氢氧化锡粉末和光透射确保以预定的比例在粘合剂成分的微粒的分散; 并通过采用特定的粘合剂成分的和，作为导电性粉末，氢氧化锡粉末和以预定的比率比氢氧化锡粉末等导电性粉末，可以提供一种组合物，其可形成透明导电膜的那样展品优良的抗静电效果 ，并且具有非常高的可见光透射率，并且由于没有颜色吸收worin的提供与自然色调反mitted图像，如果需要的话清除，该膜从而具有出色的耐刮擦性和高防眩效果，或该膜的折射率可以被控制; 求的透明导电膜，电影，和具有其屏幕上的透明导电膜的寻求的显示器。

公开(公告)号：EP2099037A1

公开(公告)日：2009-09-09

申请号：EP07744816.5

申请日：2007-06-06

申请人： Mitsubishi Materials Electronic Chemicals Co., Ltd. ,  Mitsubishi Materials Corporation ,  Dai Nippon Toryo Co., Ltd.

发明人： MUROTA, Masamichi ,  UMEDA, Hirotoshi ,  IKEDA, Hiroshi ,  OMURA, Kunio ,  MUROUCHI, Masato ,  HAYASHI, Kenji ,  MIZOGUCHI, Daigou ,  MURAKAMI, Masaaki

IPC分类号： H01B13/00 ,  C09D5/24 ,  C09D7/12 ,  C09D201/00 ,  H01B5/14

CPC分类号： C09D5/24 ,  H01B1/08 ,  H01B1/14

摘要： The invention provides a composition for forming transparent conductive film, characterized by including a binder component, and a conductive powder and a high-refractive index powder which are dispersed in the binder component, wherein the conductive powder is formed of tin hydroxide powder in an amount of 0.1 to 30 mass% and a conductive powder other than tin hydroxide powder in an amount of 70 to 99.9 mass%. The composition can form a transparent conductive film that exhibits remarkably excellent scratch resistance, excellent antistatic effect, and has very high visible light transmittance and which can impart a desired refractive index to the film. The invention also provides such a transparent conductive film and a display having such a transparent conductive film on a screen thereof.

摘要翻译： 本发明提供了用于形成透明导电膜，电影，通过包括粘合剂成分，和导电粉和分散在所述粘合剂成分的高折射率粉末，worin导电粉末为特征的组合物在量上形成氢氧化锡粉末的 为0.1〜30质量％，比按质量计70至99.9％的量的氢氧化锡粉末等导电粉末。 该组合物可形成透明导电膜的那样展品显着优异的耐擦伤性，优异的抗静电效果，并且具有非常高的可见光透射率和可赋予所期望的折射率的膜。 因此本发明提供寻求的透明导电膜和具有透明导电膜的寻求一个在屏幕上显示它们。

公开(公告)号：EP2099037B1

公开(公告)日：2013-08-07

申请号：EP07744816.5

申请日：2007-06-06

申请人： Mitsubishi Materials Electronic Chemicals Co., Ltd. ,  Mitsubishi Materials Corporation ,  Dai Nippon Toryo Co., Ltd.

发明人： MUROTA, Masamichi ,  UMEDA, Hirotoshi ,  IKEDA, Hiroshi ,  OMURA, Kunio ,  MUROUCHI, Masato ,  HAYASHI, Kenji ,  MIZOGUCHI, Daigou ,  MURAKAMI, Masaaki

IPC分类号： H01B13/00 ,  C09D5/24 ,  C09D7/12 ,  C09D201/00 ,  H01B5/14 ,  H01B1/20

CPC分类号： C09D5/24 ,  H01B1/08 ,  H01B1/14

公开(公告)号：EP2058279A1

公开(公告)日：2009-05-13

申请号：EP07806497.9

申请日：2007-08-31

申请人： Mitsubishi Materials Corporation ,  Jemco INC.

发明人： TSUZUKIHASHI, Kouji ,  IKEDA, Hiroshi ,  YANAGIMACHI, Atsuo ,  WAKITA, Saburo

IPC分类号： C01B33/037 ,  B22D21/00 ,  B22D27/04

CPC分类号： C01B33/037 ,  C30B11/00 ,  C30B29/06

摘要： This metallic silicon is manufactured by refining molten crude metallic silicon by unidirectional solidification, and has a purity of 3N or more to 6N or less and an average crystal grain diameter of 1 mm or more. This method for manufacturing the metallic silicon includes: solidifying molten crude metallic silicon in a mold which contains fine silica particles in an inner peripheral layer thereof by unidirectional solidification at a rate of 1 mm/min or less; and then cooling to 200°C or below at a rate of 2°C/min or less.

摘要翻译： 该金属硅是通过单向凝固精炼熔融的粗制金属硅来制造的，其纯度为3N以上且6N以下，平均结晶粒径为1mm以上。 该金属硅的制造方法包括：通过以1mm / min以下的速度进行单向凝固，在其内周层中固化含有二氧化硅微粒的模具中的熔融粗制金属硅; 然后以2℃/ min以下的速度冷却至200℃以下。