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1.发明公开MTJ THREE-AXIS MAGNETIC FIELD SENSOR AND ENCAPSULATION METHOD THEREOF 审中-公开DREIACHSIGER MTJ-MAGNETFELDSENSOR UND VERKAPSELUNGSVERFAHRENDAFÜR
公开(公告)号：EP2752675A1
公开(公告)日：2014-07-09
申请号：EP12826813.3
申请日：2012-08-27
发明人： LEI, Xiaofeng , ZHANG, Xiaojun , LI, Wei , XUE, Songsheng
CPC分类号： G01R33/098 , G01R3/00 , G01R33/0206 , G01R33/093 , Y10T29/49002
摘要： The present invention discloses a MTJ triaxial magnetic field sensor, comprising an X-axis bridge sensor that has a sensing direction along an X-axis, a Y-axis bridge sensor that has a sensing direction along a Y-axis, a Z-axis sensor that has a sensing direction along a Z-axis, and an ASIC chip connected with and matched to the X-axis, Y-axis, and Z-axis sensor chips. The Z-axis sensor includes a substrate and MTJ magnetoresistive elements deposited on the substrate. The Z axis magnetic field sensor is attached to the ASIC chip along an attachment edge, and an angle is formed between the sensor side of the Z axis magnetic field sensor and the adjacent attachment edge. The attachment edge angle is an acute angle or an obtuse angle. The resulting X, Y, and Z axes are mutually orthogonal. The above design provides a highly integrated sensor with high sensitivity, low power consumption, good linearity, wide dynamic range, excellent thermal stability, and low noise.
摘要翻译： 本发明公开了一种MTJ三轴磁场传感器，其特征在于，包括具有X轴感测方向的X轴桥式传感器，具有沿着Y轴的检测方向的Y轴桥式传感器，Z轴 传感器，其具有沿Z轴的感测方向，以及与X轴，Y轴和Z轴传感器芯片连接并匹配的ASIC芯片。 Z轴传感器包括沉积在衬底上的衬底和MTJ磁阻元件。 Z轴磁场传感器沿着安装边缘连接到ASIC芯片，并且在Z轴磁场传感器的传感器侧和相邻的附接边缘之间形成一个角度。 附着边角是锐角或钝角。 所得到的X，Y和Z轴是相互正交的。 上述设计提供了高灵敏度，低功耗，线性好，动态范围广，热稳定性好，噪音低的高度集成的传感器。
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2.发明公开
公开(公告)号：EP2696209A1
公开(公告)日：2014-02-12
申请号：EP12767718.5
申请日：2012-04-01
发明人： JIN, Insik , LEI, Xiaofeng , DEAK, James Geza , SHEN, Weifeng , XUE, Songsheng , LI, Wei
CPC分类号： G01R33/09 , G01D5/145 , G01R33/0005 , G01R33/0011 , G01R33/098 , G06Q10/00 , G06Q2220/00 , G07F1/00 , H01L27/22 , H01L43/08
摘要： The present invention discloses a design of a single-chip push-pull bridge sensor, composed of magnetoresistive elements, utilizing on-chip permanent magnets. The permanent magnets are oriented to preset magnetization directions of free layers of adjacent sensor bridge arms so that they point to different directions with respect the same sensing direction, enabling push-pull operation. The push-pull bridge sensor of the present invention is integrated on a single chip. Additionally, an on-chip coil is disclosed to reset or calibrate the magnetization directions of the free layers of the magnetoresistive elements.
摘要翻译： 本发明公开了利用片上永磁体的由磁阻元件构成的单片推挽桥式传感器的设计。 永磁体被定向成相邻传感器桥臂的自由层的预定磁化方向，使得它们相对于相同的感测方向指向不同的方向，从而能够进行推挽操作。 本发明的推挽桥式传感器集成在单个芯片上。 此外，公开了片上线圈以复位或校准磁阻元件的自由层的磁化方向。
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公开(公告)号：EP2801834A1
公开(公告)日：2014-11-12
申请号：EP12863825.1
申请日：2012-10-30
发明人： HAN, Liansheng , BAI, Jianmin , LI, Wei , XUE, Songsheng
IPC分类号： G01R19/32
CPC分类号： G01R19/0092 , G01R15/205 , G01R17/10 , G01R19/32 , G01R33/06 , G01R33/098
摘要： This patent discloses a current sensor comprising a sensor bridge (14), which consists of several magnetic tunnel junction (MTJ) elements (R11, R12, R21, R22), a MTJ temperature compensation resistor (16), and a current lead (20), which are integrated onto the same chip. The current lead (20) is positioned close to the sensor bridge (14), and it is used to carry the test current (19). A permanent magnet (17) is arranged at the periphery of the MTJ temperature compensation resistor (16). The permanent magnet (17) rigidly aligns the magnetization direction (7) of the free layer of the MTJ temperature compensation resistor (16) anti-parallel to the magnetization direction (8) of a pinning layer; so that the MTJ temperature compensation resistor (16) remains in a high resistance state providing a resistance value that changes as a function of temperature. The sensor bridge (14) is connected in series with the MTJ temperature compensation resistor (16) in order to temperature compensate the sensor bridge (14). A magnetic field (21) generated by the test current (19) produces an output voltage at the output of the temperature compensated sensor bridge that is proportional to the test current value. As a result of this temperature compensated structure, the current sensor has the advantages of high sensitivity, wide linear range, low power consumption, and excellent temperature stability.
摘要翻译： 该专利公开了一种电流传感器，其包括由多个磁性隧道结（MTJ）元件（R11，R12，R21，R22），MTJ温度补偿电阻器（16）和电流引线（20）组成的传感器桥 ），它们集成在同一芯片上。 电流引线（20）位于传感器电桥（14）附近，并用于承载测试电流（19）。 MTJ温度补偿电阻器（16）的外围设置有永磁体（17）。 永磁体（17）使MTJ温度补偿电阻器（16）的自由层的磁化方向（7）与钉扎层的磁化方向（8）反平行地刚性对准; 使得MTJ温度补偿电阻器（16）保持处于高电阻状态，从而提供随温度变化的电阻值。 传感器电桥（14）与MTJ温度补偿电阻器（16）串联以便温度补偿传感器电桥（14）。 由测试电流（19）产生的磁场（21）在温度补偿传感器桥的输出处产生与测试电流值成比例的输出电压。 由于采用这种温度补偿结构，电流传感器具有灵敏度高，线性范围宽，功耗低，温度稳定性好等优点。
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公开(公告)号：EP2752676A1
公开(公告)日：2014-07-09
申请号：EP12828008.8
申请日：2012-08-27
发明人： LEI, Xiaofeng , ZHANG, Xiaojun , LI, Wei , XUE, Songsheng
CPC分类号： G01R33/0206 , G01R33/0005 , G01R33/0052 , G01R33/028 , G01R33/09 , G01R33/093 , G01R33/096 , G01R33/098
摘要： The present invention discloses a triaxial magnetoresistive sensor. It comprises a substrate integrated with a biaxial magnetic field sensor, a Z-axis sensor that has a sensing direction along Z-axis perpendicular to the two axes of the biaxial magnetic field sensor, and an ASIC. The biaxial magnetic field sensor comprises an X-axis bridge sensor and a Y-axis bridge sensor. The Z-axis sensor and the two-axis sensor are electrically interconnected with the ASIC. A single-chip implementation of the triaxial magnetic field sensor comprises a substrate, onto which a triaxial magnetic field sensor and an ASIC are stacked. The triaxial magnetic field sensor comprises an X-axis bridge sensor, a Y-axis bridge sensor, and a Z-axis bridge sensor. The above design provides a highly integrated sensor with high sensitivity, low power consumption, good linearity, wide dynamic range, excellent thermal stability, and low magnetic noise.
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