公开(公告)号：EP0661916A1

公开(公告)日：1995-07-05

申请号：EP93914961.3

申请日：1993-07-06

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： FUJIMORI, Yoshinori ,  MOMMA, Jun, 104, Yokohamakamihoshikita-Pakuhomuzu ,  SASAKI, Tomiya ,  IWASAKI, Hideo ,  SAKAMOTO, Toshiya, Toshiba-Hiyoshiryo ,  ENDO, Hiroshi ,  HISANO, Katsumi ,  SORI, Naoyuki ,  SHIMOTORI, Kazumi ,  YAGI, Noriaki ,  SHIZU, Hiromi ,  SANO, Takashi,

IPC分类号： H05K7/20 ,  H01L23/373

CPC分类号： H01L24/31 ,  F28F13/00 ,  F28F2013/006 ,  H01L23/3677 ,  H01L23/3733 ,  H01L2224/13311 ,  H01L2224/13313 ,  H01L2224/29111 ,  H01L2224/29499 ,  H01L2224/83101 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/157 ,  H01L2924/19041 ,  Y10S428/902 ,  Y10S428/913 ,  Y10T428/24802 ,  Y10T428/249987 ,  Y10T428/249991 ,  Y10T428/254 ,  Y10T428/2915 ,  Y10T428/2933 ,  Y10T428/31786 ,  H01L2924/01083 ,  H01L2924/01048 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/13111 ,  H01L2924/00014

摘要： A heat dissipating sheet excelling in heat dissipating characteristic (thermal conductivity) in the thickness direction, adhesion to the part to be cooled, and electrical insulating quality. In a heat dissipating sheet (1) wherein a plurality of insulators (3) having high thermal conductivities are dispersed in a matrix-like insulator (2), each insulator (3) is oriented upright or inclinedly with respect to the thickness direction of the heat dissipating sheet (1) so that at least one edge of each insulator is exposed from the surface of the matrix-like insulator (2). Also, the ratio of the sum of all the cross-sectional areas of the insulators (3) to the area of the surface of the heat dissipating sheet (1) is preferably more than 1 %.

公开(公告)号：EP0666336B1

公开(公告)日：2001-10-17

申请号：EP94921823.4

申请日：1994-07-27

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： SATO, Michio ,  YAMANOBE, Takashi ,  KOMATSU, Tohru ,  FUKASAWA, Yoshiharu ,  YAGI, Noriaki ,  MAKI, Toshihiro ,  SHIZU, Hiromi

IPC分类号： C23C14/34 ,  C04B35/58

CPC分类号： H01J37/3426 ,  C23C14/3414 ,  H01J37/3491

摘要： A high melting point metallic silicide target according to the present invention has a fine mixed system comprising MSi2 particles (here, M denoting high melting point metal) and Si particles and is characterized in that the number of MSi2 particles independently existing in a cross-sectional area of 0.01 mm2 of the mixed system is equal to or less than 15, that the average grain size of the MSi¿2? particles is equal to or less than 10 νm, and the maximum grain size of free Si particles existing between MSi2 particles is equal to or less than 20 νm. The target has a fine mixed system, high density and uniform constituents, and is highly pure with little impurities such as oxygen being contained. By using this target it is possible to reduce variation in film resistance in the surface of particles and/or wafers and film impurities which are generated during sputtering, thereby making it possible to improve the yield in production of semiconductor devices and reliability of the devices so produced.

公开(公告)号：EP0661916B1

公开(公告)日：2000-05-17

申请号：EP93914961.3

申请日：1993-07-06

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： FUJIMORI, Yoshinori ,  MOMMA, Jun, 104, Yokohamakamihoshikita-Pakuhomuzu ,  SASAKI, Tomiya ,  IWASAKI, Hideo ,  SAKAMOTO, Toshiya, Toshiba-Hiyoshiryo ,  ENDO, Hiroshi ,  HISANO, Katsumi ,  SORI, Naoyuki ,  SHIMOTORI, Kazumi ,  YAGI, Noriaki ,  SHIZU, Hiromi ,  SANO, Takashi,

IPC分类号： H05K7/20 ,  H01L23/373

CPC分类号： H01L24/31 ,  F28F13/00 ,  F28F2013/006 ,  H01L23/3677 ,  H01L23/3733 ,  H01L2224/13311 ,  H01L2224/13313 ,  H01L2224/29111 ,  H01L2224/29499 ,  H01L2224/83101 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01041 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01057 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/0133 ,  H01L2924/157 ,  H01L2924/19041 ,  Y10S428/902 ,  Y10S428/913 ,  Y10T428/24802 ,  Y10T428/249987 ,  Y10T428/249991 ,  Y10T428/254 ,  Y10T428/2915 ,  Y10T428/2933 ,  Y10T428/31786 ,  H01L2924/01083 ,  H01L2924/01048 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/13111 ,  H01L2924/00014

公开(公告)号：EP0666336A1

公开(公告)日：1995-08-09

申请号：EP94921823.4

申请日：1994-07-27

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： SATO, Michio ,  YAMANOBE, Takashi ,  KOMATSU, Tohru ,  FUKASAWA, Yoshiharu ,  YAGI, Noriaki ,  MAKI, Toshihiro ,  SHIZU, Hiromi

IPC分类号： C23C14/34 ,  C04B35/58

CPC分类号： H01J37/3426 ,  C23C14/3414 ,  H01J37/3491

摘要： A high melting point metallic silicide target according to the present invention has a fine mixed system comprising MSi₂ particles (here, M denoting high melting point metal) and Si particles and is characterized in that the number of MSi₂ particles independently existing in a cross-sectional area of 0.01 mm² of the mixed system is equal to or less than 15, that the average grain size of the MSi₂ particles is equal to or less than 10 µm, and the maximum grain size of free Si particles existing between MSi₂ particles is equal to or less than 20 µm. The target has a fine mixed system, high density and uniform constituents, and is highly pure with little impurities such as oxygen being contained. By using this target it is possible to reduce variation in film resistance in the surface of particles and/or wafers and film impurities which are generated during sputtering, thereby making it possible to improve the yield in production of semiconductor devices and reliability of the devices so produced.

摘要翻译： 高熔点金属硅化物靶雅丁到本发明具有精细的混合系统，其包括MSI2颗粒（在此，M表示高熔点金属）和Si粒子，并且其特征在做的MSI2颗粒unabhängig存在于横截面的数目 为0.01mm <2>该混合系统的面积等于或小于15，做了MSI2颗粒的平均粒径等于或小于10微米，和自由Si的最大粒径的颗粒MSI2之间存在 颗粒是等于或小于20微米。 目标具有精细混合系统，高密度和均匀的成分，并与杂质少的高纯度：如被包含氧。 通过使用该目标，能够减少薄膜的电阻变化中的颗粒和/或晶片并且其溅射过程中产生的杂质膜的表面上，从而能够提高生产设备的半导体器件的可靠性的产量，从而 产生的。