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    READ-ONLY MAGNETIC MEMORY DEVICE MROM
    2.
    发明公开
    READ-ONLY MAGNETIC MEMORY DEVICE MROM 审中-公开
    NURLESE-MAGNETSPEICHERBAUSTEIN-MROM

    公开(公告)号：EP1550135A1

    公开(公告)日：2005-07-06

    申请号：EP03798986.0

    申请日：2003-09-12

    申请人： Koninklijke Philips Electronics N.V.

    发明人： LENSSEN, Kars-Michiel, H. ,  VAN HOUTEN, Hendrik

    IPC分类号： G11C17/02 ,  G11C11/16 ,  G11C11/15

    CPC分类号： G11C11/16 ,  G11C11/15 ,  G11C17/02

    摘要： A storage device has an information carrier part (10) and a read-out part (30). The information carrier part (10) is provided with a pattern of an electro-magnetic material constituting an array of bit locations (11) and the presence or absence of said material at the information plane represents the logical value. The read-out part has a two-dimensional array (31) of electro-magnetic sensor elements that are sensitive to the presence of said electro-magnetic material on a near-field working distance. During manufacture the parts are fixedly coupled and aligned for positioning the bit locations opposite the sensor elements.

    SENSOR AND METHOD FOR MEASURING A CURRENT OF CHARGED PARTICLES
    4.
    发明公开
    SENSOR AND METHOD FOR MEASURING A CURRENT OF CHARGED PARTICLES 审中-公开
    传感器和方法测量带电粒子CURRENT

    公开(公告)号：EP1514126A1

    公开(公告)日：2005-03-16

    申请号：EP03735868.6

    申请日：2003-05-21

    申请人： Koninklijke Philips Electronics N.V.

    发明人： LENSSEN, Kars-Michiel, H.

    IPC分类号： G01R33/09 ,  G01R15/20

    CPC分类号： G01R15/205 ,  G01R33/09

    摘要： A current sensor (1) is disclosed for measuring a magnetic field (8) induced by a current of charged particles (3) having at least one magneto resistive sensor element (2;6;12;16) for enclosing the magnetic field induced by the current of charged particles, the magneto resistive sensor element being arranged perpendicularly to the current (3) during use. A method for accurately determining a current of charged particles is also disclosed making use of the current sensor (1). Further a protective switch device (30) is disclosed for protecting a user of an electrical device (31) by switching a supply current to the electric device off in case of malfunction of the electric device is also provided comprising the above current sensor (1).

    MAGNETIC MULTILAYER SENSOR
    7.
    发明授权
    MAGNETIC MULTILAYER SENSOR 有权
    磁性复合传感器

    公开(公告)号：EP1012617B1

    公开(公告)日：2007-01-17

    申请号：EP99914707.7

    申请日：1999-04-29

    申请人： Koninklijke Philips Electronics N.V.

    发明人： LENSSEN, Kars-Michiel, H. ,  KUIPER, Antonius, E., T. ,  ROOZEBOOM, Freddy

    IPC分类号： G01R33/09

    CPC分类号： G11C11/16 ,  B82Y25/00 ,  G01R33/093 ,  Y10S428/90

    摘要： A robust Giant Magneto Resistive effect type multilayer sensor comprising a free and a pinned ferromagnetic layer, which can withstand high temperatures and strong magnetic fields as required in automotive applications. The GMR multi-layer has an asymmetric magneto-resistive curve and enables sensors with complementary output signals so that a Wheatstone bridge is possible. The improvement is obtained by a combination of measures including the use of a combination of an Artificial Anti Ferromagnet as the pinned layer and an IrMn exchange-biasing layer, the latter preferably arranged at the bottom of the layer stack on top of a buffer layer.

    PROGRAMMABLE MAGNETIC MEMORY DEVICE
    8.
    发明公开
    PROGRAMMABLE MAGNETIC MEMORY DEVICE 审中-公开
    可编程磁内存模块

    公开(公告)号：EP1561220A2

    公开(公告)日：2005-08-10

    申请号：EP03799041.3

    申请日：2003-09-30

    申请人： Koninklijke Philips Electronics N.V.

    发明人： PHILLIPS, Gavin, N. ,  LENSSEN, Kars-Michiel, H.

    IPC分类号： G11C11/16

    CPC分类号： G11C11/16 ,  G11B5/00 ,  G11B5/488 ,  G11B5/4907 ,  G11B2005/0002 ,  G11B2005/0021

    摘要： A memory device has an information plane (32) for storing data bits in a magnetic state of an electro-magnetic material at an array of bit locations (31). The device further has an array of electro-magnetic sensor elements (51) that are aligned with the bit locations. The information plane (32) is programmable or programmed via a separate writing device (21). The writing device provides at least one beam of radiation (26) for heating the electro-magnetic material at the bit locations to a programming temperature. The magnetic state of the bit locations is programmed by applying a magnetic field during said heating of selected bit locations via the beams of radiation. Hence the memory device provides a magnetic read-only memory (MROM) that cannot be (re-)programmed without the proper writing device.

    MAGNETIC MEMORY
    10.
    发明公开
    MAGNETIC MEMORY 有权
    磁记忆

    公开(公告)号：EP1297533A1

    公开(公告)日：2003-04-02

    申请号：EP01940492.0

    申请日：2001-05-16

    申请人： Koninklijke Philips Electronics N.V.

    发明人： LENSSEN, Kars-Michiel, H. ,  RUIGROK, Jacobus, J., M.

    IPC分类号： G11C11/16 ,  G11C11/15 ,  G11C11/14

    CPC分类号： G11C11/16 ,  G11C11/14 ,  G11C11/15 ,  Y10T428/325

    摘要： The object of the invention is the shielding of a magnetic memory against high external magnetic fields. The magnetic memory (1) comprises an array of magnetic memory elements (2), each memory element (3) including at least one layer of magnetic material (4). The operation of the magnetic memory elements (3) is based on a magnetoresistance effect. The memory (1) is protected against high external magnetic fields by a shielding layer (14), which has been split into regions (5) covering the memory elements (3). The magnetic memory (1) is not erased by high external magnetic fields because of a strong attenuation of the external magnetic field by the regions (5) of the shielding layer (14).

    摘要翻译： 本发明的目的是防止高磁场对磁存储器的屏蔽。 磁存储器（1）包括磁存储元件（2）的阵列，每个存储元件（3）包括至少一个磁性材料层（4）。 磁存储元件（3）的操作基于磁阻效应。 存储器（1）通过已被分成覆盖存储元件（3）的区域（5）的屏蔽层（14）受到高外部磁场的保护。 由于屏蔽层（14）的区域（5）对外部磁场的强烈衰减，磁存储器（1）不会被高外部磁场擦除。