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1.发明授权MAGNETORESISTIVE SENSOR OR MEMORY ELEMENTS WITH DECREASED MAGNETIC SWITCH FIELD 有权磁电阻传感器及存储器元件具有降低磁控制面板
公开(公告)号：EP1129366B1
公开(公告)日：2005-11-09
申请号：EP00964061.6
申请日：2000-08-30
发明人： COEHOORN, Reinder
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/59683 , G11B2005/3996 , G11C11/16
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2.发明公开METHOD AND ARRANGEMENT FOR PROTECTING A CHIP AND CHECKING ITS AUTHENTICITY 有权方法和系统，用于保护CHIIPS，并检查其真实性
公开(公告)号：EP1499905A1
公开(公告)日：2005-01-26
申请号：EP03712528.3
申请日：2003-04-04
IPC分类号： G01R31/316
CPC分类号： G06K19/07372 , H01L23/576 , H01L2924/0002 , H01L2924/3011 , Y10S257/922 , H01L2924/00
摘要： The semiconductor device has a security coating with embedded magnetic particles and magnetoresistive sensors. This renders possible a measurement of the impedance of security elements defined by magnetoresistive sensors and security coating. If initial values of the impedance are stored, actual values can be compared therewith to see if the device has not been electrically probed or modified. Such a comparison can be used to check the authenticity of the device.
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公开(公告)号：EP0880711A2
公开(公告)日：1998-12-02
申请号：EP97910581.0
申请日：1997-11-13
CPC分类号： G11C11/16 , B82Y25/00 , G01R33/093 , G11B5/397
摘要： The device comprises a Wheatstone bridge with at least four magnetoresistive elements (1a, 1b, 1c, 1d) on a substrate (15), each magnetoresistive element comprising at least one sensitive portion (13) comprising successively a first ferromagnetic layer (19) having a magnetic easy axis (27) extending in a first direction, a non-magnetic layer (21) and a second ferromagnetic layer (23) having a magnetic easy axis (29) extending in a second direction that is different from the first direction. The sensitive portions (13) have mutually parallel sensitive directions that are parallel to a third direction (X). Each magnetoresistive element (1a, 1b, 1c, 1d) is associated with a current conductor (35a, 35b, 35c, 35d) provided in the immediate vicinity of that magnetoresistive element. The first direction (27) is canted through an acute angle with respect to the third direction (X), and the second direction (29) is canted in the opposite sense through an acute angle with respect to the third direction. Each one of the current conductors (35a, 35b, 35c, 35d) extends over at least a portion of its length in a fourth direction (Y) perpendicular to the third direction (X).
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公开(公告)号：EP0880711B1
公开(公告)日：2006-08-09
申请号：EP97910581.4
申请日：1997-11-13
CPC分类号： G11C11/16 , B82Y25/00 , G01R33/093 , G11B5/397
摘要： The device comprises a Wheatstone bridge with at least four magnetoresistive elements (1a, 1b, 1c, 1d) on a substrate (15), each magnetoresistive element comprising at least one sensitive portion (13) comprising successively a first ferromagnetic layer (19) having a magnetic easy axis (27) extending in a first direction, a non-magnetic layer (21) and a second ferromagnetic layer (23) having a magnetic easy axis (29) extending in a second direction that is different from the first direction. The sensitive portions (13) have mutually parallel sensitive directions that are parallel to a third direction (X). Each magnetoresistive element (1a, 1b, 1c, 1d) is associated with a current conductor (35a, 35b, 35c, 35d) provided in the immediate vicinity of that magnetoresistive element. The first direction (27) is canted through an acute angle with respect to the third direction (X), and the second direction (29) is canted in the opposite sense through an acute angle with respect to the third direction. Each one of the current conductors (35a, 35b, 35c, 35d) extends over at least a portion of its length in a fourth direction (Y) perpendicular to the third direction (X).
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5.发明公开MAGNETORESISTIVE SENSOR OR MEMORY ELEMENTS WITH DECREASED MAGNETIC SWITCH FIELD 有权磁电阻传感器及存储器元件具有降低磁控制面板
公开(公告)号：EP1129366A1
公开(公告)日：2001-09-05
申请号：EP00964061.6
申请日：2000-08-30
发明人： COEHOORN, Reinder
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B5/3903 , G11B5/59683 , G11B2005/3996 , G11C11/16
摘要： A sensor (MRE) or memory element (ME) having a free (1, 2, 3) and a pinned (Mp, 6) magnetic layer separated by a separation layer (5). The free layer comprises a sandwich structure comprising two magnetic layers (1, 2), coupled anti-ferromagnetically by a thin non-magnetic layer (3), the easy magnetization direction for the two magnetic layers being directed transversely to the longitudinal axis (l) of the stripe.
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公开(公告)号：EP1046048A1
公开(公告)日：2000-10-25
申请号：EP99940125.0
申请日：1999-08-03
发明人： COEHOORN, Reinder
IPC分类号： G01R33/09
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G01R33/096 , G11B5/3903 , G11B5/465 , G11B2005/0008 , G11B2005/0018 , G11B2005/3996 , G11C11/16 , Y10T428/1129
摘要： A strongly miniaturizable magnetic field sensor is based on four spin tunnel junctions, together forming a Wheatstone bridge. The magnetically sensitive electrode functions as well as a laminated flux concentrator, resulting in a low noise single domain configuration, and allowing for magnetization flipping for offset correction. The very simple design also allows easy definition of the fixed magnetization direction of the counter electrode. Very high output voltage combined with very low power.
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公开(公告)号：EP1295285B1
公开(公告)日：2010-11-03
申请号：EP01962715.7
申请日：2001-06-07
CPC分类号： G11B5/1278 , G11B5/00 , G11B5/012 , G11B5/3103 , G11B5/488 , G11B13/045 , G11B2005/0002 , G11B2005/0005 , G11B2005/0021 , G11B2005/0029
摘要： A record head (3) for the thermally assisted magnetic recording on a storage medium (5). The head has an inductive section, which includes a magnetic circuit having a record flux guide (7) ending in a record pole (7a), and an optical section, which includes an optical guide ending in an optical outlet (11a). The optical guide is arranged beside the magnetic circuit and is an optical layer (11) transparent to a selected wavelength. The optical layer is interposed between two cladding layers, of which one is formed by the record flux guide (17) of the magnetic circuit and the other (19) is formed by a layer having an index of refraction smaller than the index of refraction of the optical layer. The record head makes it possible to minimize the time that elapse between the moment of maximal energy absorption in the medium and the moment of recording on the medium in a thermally assisted recording process.
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8.发明授权SENSOR AND METHOD FOR MEASURING THE AREAL DENSITY OF MAGNETIC NANOPARTICLES ON A MICRO-ARRAY 有权传感器和方法测量磁性纳米粒子的表面密度在微阵列
公开(公告)号：EP1456658B1
公开(公告)日：2006-05-17
申请号：EP02790607.2
申请日：2002-12-17
IPC分类号： G01N33/543 , C12Q1/68 , B01J19/00
CPC分类号： G01R33/12 , B82Y25/00 , C12Q1/6825 , G01N15/0656 , G01N27/745 , G01N33/54326 , G01N33/5438 , G01N2446/00 , G01R33/093 , G01R33/096 , G01R33/1269 , H01L43/08 , C12Q2563/155 , C12Q2563/143
摘要： The present invention relates to a method and a device for magnetic detection of binding of biological molecules on a biochip. A magnetoresistive sensor device for measuring an areal density of magnetic nanoparticles on a micro-array, the magnetic nanoparticles (15) being directly or indirectly coupled to the target sample (11), is described. The magnetoresistive sensor device comprises a substrate (3) having attached thereto binding sites (9) able to selectively bind target sample (11), and a magnetoresistive sensor for detecting the magnetic field of the nanoparticles (15) coupled to the target sample. The magnetoresistive sensor comprises a plurality of magnetoresistive sensing elements (17, 19), the width and length dimensions of which are at least a factor 10 or more, preferably a factor 100 or more larger than the diameter of the nanoparticles (15). A corresponding method is described as well.
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公开(公告)号：EP1563491A1
公开(公告)日：2005-08-17
申请号：EP03810545.8
申请日：2003-10-08
发明人： COEHOORN, Reinder
摘要： An information carrier (10) has an information plane that has a pattern of superparamagnetic material constituting an array of storage locations (11). The presence of a specific superparamagnetic material (12R, 12G, 12B, 12Y) at the information plane represents a value of a storage location. The superparamagnetic materials have a specific response to a varying magnetic field, e.g. a known decay time. A storage unit has an interface surface (32) for cooperating with the information plane, and has coils (27) for generating the varying magnetic field. The interface surface has an array of magnetic sensor elements (24,25,26) each having a sensitive area for generating a read signal. A processing unit (33) detects said presence via the specific response by processing the read signal.
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公开(公告)号：EP1423861A1
公开(公告)日：2004-06-02
申请号：EP02755560.6
申请日：2002-08-21
CPC分类号： B82Y10/00 , B82Y25/00 , G11B5/3909 , G11B2005/3996 , G11C11/15 , G11C11/16 , G11C13/0014 , G11C13/025 , H01F10/32 , H01F10/3254 , H01L29/82 , H01L43/08 , H01L43/10
摘要： A magnetoresistive device (11) having a lateral structure and provided with a non-magnetic spacer layer (3) of organic semiconductor material allows the presence of an additional electrode (19). With this electrode (19), a switch-function is integrated into the device (11). Preferably, electrically conductive layers (13,23) are present for the protection of the ferromagnetic layers (1,2). The magnetoresistive device (11) is suitable for integration into an array so as to act as an MRAM device.
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