摘要:
A multilayer structure disclosed is a multilayer structure including at least one base (X), at least one layer (Y), and at least one layer (Z). The layer (Y) contains an aluminum atom. The layer (Z) contains a polymer (E) having a plurality of phosphorus atoms. The polymer (E) is a polymer of at least one monomer including a vinylphosphonic acid compound. The multilayer structure includes at least one pair of the layer (Y) and the layer (Z) that are contiguously stacked. The layer (Z) is formed by applying a coating liquid (V) which is a solution of the polymer (E) having a plurality of phosphorus atoms. The multilayer structure disclosed is excellent in gas barrier properties, and can maintain the gas barrier properties at a high level even when subjected to physical stresses such as deformation and impact.
摘要:
The present invention relates to a multilayer structure including a base (X) and a layer (Y) stacked on the base (X). The layer (Y) contains an aluminum-containing compound (A), an organic phosphorus compound (BO), and a polymer (F) having an ether bond and having no glycosidic bond.
摘要:
The present invention relates to an electronic device having an electronic device body 1 the surface of which is covered by a protective sheet. The protective sheet includes a multilayer structure including a base (X) and a layer (Y) stacked on the base (X). The layer (Y) includes a metal oxide (A), a phosphorus compound (B), and cations (Z) with an ionic charge (Fz) of 1 or more and 3 or less. The phosphorus compound (B) includes a compound containing a moiety capable of reacting with the metal oxide (A). In the layer (Y), the number of moles (N M ) of metal atoms (M) constituting the metal oxide (A) and the number of moles (N P ) of phosphorus atoms derived from the phosphorus compound (B) satisfy a relationship of 0.8 ≤ N M /N P ≤ 4.5, and N M , the number of moles (Nz) of the cations (Z), and Fz satisfy a relationship of 0.001 ≤ Fz × N Z /N M ≤ 0.60.
摘要:
A product provided includes a packaging material, and the packaging material includes a multilayer structure. The multilayer structure includes at least one base (X), at least one layer (Y), and at least one layer (Z). The layer (Y) contains an aluminum atom. The layer (Z) contains a polymer (E) containing a monomer unit having a phosphorus atom. The multilayer structure includes at least one pair of the layer (Y) and the layer (Z) that are contiguously stacked. This product is excellent in gas barrier properties, and adapted to maintain the gas barrier properties at a high level even when subjected to physical stresses such as deformation and impact.
摘要:
A composite structure disclosed includes a base (X) and a layer (Y). The layer (Y) includes a mixture of a metal oxide (A), a phosphorus compound (B), and a compound (L a ) (silicon compound). Examples of the phosphorus compound (B) and the compound (L a ) include a compound containing a site capable of reacting with the metal oxide (A). When the number of moles of metal atoms (M) derived from the metal oxide (A) is denoted by N M and the number of moles of Si atoms derived from the compound (L a ) is denoted by N Si , 0.01 ‰¤ N Si /N M ‰¤ 0.30 is satisfied. When the number of moles of phosphorus atoms derived from the phosphorus compound (B) is denoted by Np, 0.8 ‰¤ N M /N P ‰¤ 4.5 is satisfied.
摘要:
Provided are a novel multilayer structure that can be used to protect a device and a device using the multilayer structure. The disclosed multilayer structure is a multilayer structure including a substrate and a barrier layer stacked on the substrate. The 3% strain tension of the substrate in at least one direction is at least 2000 N/m. The barrier layer contains a reaction product (R). The reaction product (R) is a reaction product formed by a reaction at least between a metal oxide (A) and a phosphorus compound (B). In an infrared absorption spectrum of the barrier layer in a range of 800 to 1400 cm -1 , a wavenumber (n 1 ) at which maximum infrared absorption occurs is in a range of 1080 to 1130 cm -1 . A metal atom constituting the metal oxide (A) is essentially an aluminum atom.
摘要:
A composite structure disclosed includes a base (X) and a layer (Y). The layer (Y) includes a mixture of a metal oxide (A), a phosphorus compound (B), and a compound (L a ) (silicon compound). Examples of the phosphorus compound (B) and the compound (L a ) include a compound containing a site capable of reacting with the metal oxide (A). When the number of moles of metal atoms (M) derived from the metal oxide (A) is denoted by N M and the number of moles of Si atoms derived from the compound (L a ) is denoted by N Si , 0.01 ≤ N Si /N M ≤ 0.30 is satisfied. When the number of moles of phosphorus atoms derived from the phosphorus compound (B) is denoted by Np, 0.8 ≤ N M /N P ≤ 4.5 is satisfied.