摘要:
A quantum rod panel (110, 210, 310) includes a first substrate (130, 230, 330) and a second substrate (140, 240, 340) facing each other, a pixel electrode (180, 280, 380) and a common electrode (182, 282, 382) over the first substrate (130, 230, 330) and spaced apart from each other, and a quantum rod layer (150, 250, 350) between the pixel electrode (180, 280, 380) and the common electrode (182, 282, 382) and including quantum rods (152, 252, 352) and metal particles (156, 256, 356).
摘要:
Embodiments relate to a quantum rod composition (100), a quantum rod film (250), a display device (300) with a quantum rod film (370), and a method of forming a quantum rod film (370). The quantum rod film (250) includes a plurality of quantum rods (210) and a polymer (220) with a dipole side chain (224). Responsive to an external electric field (E), the major axis of the quantum rods (210) and an axis of the dipole side chain (224) arranges in the same direction. The display device (300) includes a plurality of pixel and common electrodes (350, 352) for generating an electric field, and a backlight unit (307) positioned under a first substrate (330). Responsive to receiving light from the backlight unit (307), the quantum rod film (370) emits light polarized in a direction parallel to the major axis of the quantum rods (310).
摘要:
A quantum dot (100) includes a seed (110) and a core enclosing the seed (120). The core (120) is grown from the seed to improve size uniformity of the core (120). The seed (110) includes a first compound without Cd. The first compound may be GaP. The core (120) may include a second compound including elements from group XIII and group XV. The second compound may be InP. The quantum dot (100) may also include a first shell (130) of a third compound enclosing the core (120). The third compound may be ZnSe or ZnS. The quantum dot (100) may also include a second shell (140) of a fourth compound enclosing the first shell (130). The fourth compound may be ZnS when the third compound is ZnSe. Embodiments also relate to a quantum dot (100, 272, 322, 464) including first to third elements selected from XIII group elements and XV group elements and fourth to sixth elements selected from XII group elements and XVI group elements.
摘要:
A quantum dot (QD) light emitting diode (D) comprising first and second electrodes (110, 140) facing each other; a QD emitting material layer (230) between the first and second electrodes (110, 140); and a semiconducting member (240) acting as a hole transporting path in the QD emitting material layer (230) is provided.
摘要:
A quantum dot (100) includes a seed (110) and a core enclosing the seed (120). The core (120) is grown from the seed to improve size uniformity of the core (120). The seed (110) includes a first compound without Cd. The first compound may be GaP. The core (120) may include a second compound including elements from group XIII and group XV. The second compound may be InP. The quantum dot (100) may also include a first shell (130) of a third compound enclosing the core (120). The third compound may be ZnSe or ZnS. The quantum dot (100) may also include a second shell (140) of a fourth compound enclosing the first shell (130). The fourth compound may be ZnS when the third compound is ZnSe. Embodiments also relate to a quantum dot (100, 272, 322, 464) including first to third elements selected from XIII group elements and XV group elements and fourth to sixth elements selected from XII group elements and XVI group elements.