摘要:
Disclosed is a light emitting device including a substrate, a light emitting structure including lower and upper semiconductor layers having different conductive types, and an active layer disposed between the lower and upper semiconductor layers, the light emitting structure being disposed on the substrate, and a first electrode layer disposed on the upper semiconductor layer, wherein the first electrode layer includes a first adhesive layer and a first bonding layer overlapping each other, wherein a reflective layer is not disposed between the first adhesive layer and the first bonding layer.
摘要:
Disclosed is a light emitting device including a substrate (110), a plurality of light emitting cells (100) separated from each other and disposed on the substrate, and a plurality of conductive interconnection layers (170) electrically connecting two neighboring light emitting cells. Each light emitting cell includes a light emitting structure (120) including a first conductivity-type semiconductor layer (122), an active layer (124) and a second conductivity-type semiconductor layer (126), a first electrode (130), a second electrode (140), and an etching area (S), and the light emitting structure further includes a first side surface (120a) and a second side surface (120b), and if a width between the first side surface and the second side surface is defined as W, the second electrode is disposed in an area between a position separated from the first side surface by 1/5 W and a position separated from the first side surface of the light emitting structure by 1/2 W.
摘要:
A light emitting device includes a substrate (100), a light emitting structure (105) including a first conductive semiconductor layer (120) having an exposed region, an active layer (130), and a second conductive semiconductor layer (140) on the substrate, a first electrode (170) on the exposed region of the first conductive semiconductor layer, and a second electrode (160) on the second conductive semiconductor layer, wherein a side of the light emitting structure includes a first sloped side (142) sloped from a reference plane, the first sloped side includes a concave-convex pattern (180) having a concave-convex structure in which a first direction length (111-1) is greater than a second direction length (111-2), the reference plane is a plane perpendicular to a direction in which the substrate faces the light emitting structure, and the first direction is a sloped direction of the first sloped side and the second direction is a lateral direction of the first sloped side.
摘要:
Provided are a light emitting diode, a light emitting diode package, and a lighting system. The light emitting diode includes a crystalline substrate (10) having a plurality of side surfaces (11-14), a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the substrate, and a first electrode on the first conductive type semiconductor layer and a second electrode on the second conductive type semiconductor layer. An amorphous region (11a,12a) is defined in a side surface of the substrate, and the amorphous regions of two sides (11,12) adjacent to each other have different depths from a top surface of the substrate.
摘要:
Provided are a light emitting device, a method for fabricating the light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a first conductive type semiconductor layer having a first top surface and a second top surface under the first top surface, an active layer on the first top surface of the first conductive type semiconductor layer, a second conductive type semiconductor layer on the active layer, a first electrode on the second top surface of the first conductive type semiconductor layer, an intermediate refractive layer on the second top surface of the first conductive type semiconductor layer, and a second electrode connected to the second conductive type semiconductor layer.
摘要:
Disclosed is a light emitting device including a substrate, a light emitting structure including lower and upper semiconductor layers having different conductive types, and an active layer disposed between the lower and upper semiconductor layers, the light emitting structure being disposed on the substrate, and a first electrode layer disposed on the upper semiconductor layer, wherein the first electrode layer includes a first adhesive layer and a first bonding layer overlapping each other, wherein a reflective layer is not disposed between the first adhesive layer and the first bonding layer.
摘要:
A light emitting device includes a substrate (100), a light emitting structure (105) including a first conductive semiconductor layer (120) having an exposed region, an active layer (130), and a second conductive semiconductor layer (140) on the substrate, a first electrode (170) on the exposed region of the first conductive semiconductor layer, and a second electrode (160) on the second conductive semiconductor layer, wherein a side of the light emitting structure includes a first sloped side (142) sloped from a reference plane, the first sloped side includes a concave-convex pattern (180) having a concave-convex structure in which a first direction length (111-1) is greater than a second direction length (111-2), the reference plane is a plane perpendicular to a direction in which the substrate faces the light emitting structure, and the first direction is a sloped direction of the first sloped side and the second direction is a lateral direction of the first sloped side.
摘要:
A light emitting device (100) includes a substrate (70), at least one electrode (71), a first contact layer (71a), a second contact layer (71b), a light emitting structure layer (60), and an electrode layer (80). The electrode (71) is disposed through the substrate (70). The first contact layer (71a) is disposed on a top surface of the substrate (70) and electrically connected to the electrode (71). The second contact layer (71b) is disposed on a bottom surface (70) of the substrate and electrically connected to the electrode (71). The light emitting structure layer (60) is disposed above the substrate (70) at a distance from the substrate (70) and electrically connected to the first contact layer (71a). The light emitting structure layer (60) includes a first conductive type semiconductor layer (30), an active layer (40), and a second conductive type semiconductor layer (50). The electrode layer (80) is disposed on the light emitting structure layer (60).