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    SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PRODUCTION METHOD
    1.
    发明公开
    SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PRODUCTION METHOD 有权
    HERSTELLUNGSVERFAHREN公司的HILLBLEITERELEMENT

    公开(公告)号：EP2955762A4

    公开(公告)日：2016-01-20

    申请号：EP14826471

    申请日：2014-07-16

    申请人： MARUBUN CO LTD ,  TOSHIBA MACHINE CO LTD ,  RIKEN ,  NAT INST OF ADVANCED IND SCIEN ,  ULVAC INC ,  TOKYO OHKA KOGYO CO LTD

    发明人： KASHIMA YUKIO ,  MATSUURA ERIKO ,  KOKUBO MITSUNORI ,  TASHIRO TAKAHARU ,  OOKAWA TAKAFUMI ,  HIRAYAMA HIDEKI ,  YOUN SUNG WON ,  TAKAGI HIDEKI ,  KAMIMURA RYUICHIRO ,  OSADA YAMATO ,  SHIMATANI SATOSHI

    IPC分类号： H01L33/22

    CPC分类号： G06F17/5009 ,  G06F17/10 ,  H01L33/22 ,  H01L33/24 ,  H01L33/44 ,  H01L33/502 ,  H01L2933/0083

    摘要： A semiconductor light emitting element with a design wavelength of », comprising a photonic crystal periodic structure having two structures with different refractive indices at each of one or more interfaces between layers that form the light emitting element. The period a and the radius R that are parameters of each of the one or more periodic structures and the design wavelength » satisfy Bragg conditions. The ratio (R/a) between the period a and the radius R is a value determined so that a predetermined photonic band gap (PBG) for TE light becomes maximum for each periodic structure. The parameters of each periodic structure are determined so that light extraction efficiency of the entire semiconductor light emitting element with respect to light with the wavelength » becomes maximum as a result of conducting a simulation analysis with a FDTD method using as variables the depth h of the periodic structure that is of greater than or equal to 0.5a and the period a and the radius R that are determined for each order m of the Bragg conditions.

    摘要翻译： 具有设计波长»的半导体发光元件，包括在形成发光元件的层之间的一个或多个界面的每一个处具有两个具有不同折射率的结构的光子晶体周期性结构。 作为一个或多个周期结构和设计波长中的每一个的参数的周期a和半径R满足布拉格条件。 周期a和半径R之间的比率（R / a）是确定的，使得对于每个周期性结构，TE光的预定光子带隙（PBG）变得最大。 确定每个周期结构的参数，使得整个半导体发光元件相对于波长λ的光的光提取效率变得最大，作为使用FDTD方法进行模拟分析的结果，使用作为变量的深度h 大于或等于0.5a的周期性结构以及针对布拉格条件的每个阶m确定的周期a和半径R.

    POSITIVE RESIST COMPOSITION OF CHEMICAL AMPLIFICATION TYPE, RESIST COATED MATERIAL, METHOD OF FORMING RESIST PATTERN, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE
    4.
    发明公开
    POSITIVE RESIST COMPOSITION OF CHEMICAL AMPLIFICATION TYPE, RESIST COATED MATERIAL, METHOD OF FORMING RESIST PATTERN, AND PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE 审中-公开
    正性光刻胶化学放大类型的组合物，抗材料覆盖，形成方法抗蚀剂结构和工艺的半导体元件

    公开(公告)号：EP1400853A4

    公开(公告)日：2007-09-12

    申请号：EP02743758

    申请日：2002-06-28

    申请人： TOKYO OHKA KOGYO CO LTD

    发明人： NITTA KAZUYUKI ,  MIMURA TAKEYOSHI ,  SHIMATANI SATOSHI ,  OKUBO WAKI ,  MATSUMI TATSUYA

    IPC分类号： G03F7/039 ,  G03F7/11 ,  H01L21/027

    CPC分类号： G03F7/0392 ,  G03F7/11 ,  Y10S430/106

    摘要： A resist composition which comprises (A) a polyhydroxystyrene in which at least part of the hydrogen atoms of the hydroxy groups have been replaced with acid−dissociating dissolution−inhibitive groups and which comes to have enhanced solubility in alkaline solutions when the acid−dissociating dissolution−inhibitive groups are eliminated by the action of an acid and (B) an ingredient which generates an acid upon irradiation with a radiation, wherein in a dissociation test with hydrochloric acid, the proportion of the acid−dissociating dissolution−inhibitive groups of the ingredient (A) which remain after the dissociation is 40% or less; and a positive resist composition of the chemical amplification type which is the same as the above composition except that a polyhydroxystyrene in which at least part of the hydrogen atoms of the hydroxy groups have been replaced with lower (linear or branched alkoxy)alkyl groups and which comes to have enhanced solubility in alkaline solutions when the lower alkoxyalkyl groups are eliminated by the action of an acid is used in place of the ingredient (A).