公开(公告)号：EP4418831A1

公开(公告)日：2024-08-21

申请号：EP22880618.8

申请日：2022-08-04

申请人： National Institute of Advanced Industrial Science and Technology ,  ULVAC, Inc.

发明人： TOMINAGA, Junji ,  MIYATA, Noriyuki ,  ASANUMA, Shutaro ,  MIYAGUCHI, Yuusuke ,  SAITO, Kazuya ,  JINBO, Takehito ,  HORITA, Kazumasa ,  MASUDA, Takeshi

IPC分类号： H10B99/00 ,  H01L27/105 ,  H01L21/363 ,  H01L21/365 ,  H01L29/06 ,  H01L29/15 ,  H10N70/00

CPC分类号： H10B63/10 ,  H01L21/02107 ,  H01L27/105 ,  H01L29/06 ,  H10N70/00 ,  H01L29/15

摘要： Provided is a method of manufacturing a crystallized stacked structural body excellent in manufacturing efficiency. The present invention is characterized by including: a stacked structural body-forming step of forming a stacked structural body (7) in which an Sb2Te3 layer (5) having a thickness of from 2 nm to 10 nm and a GeTe layer (6) having a thickness of more than 0 nm and 4 nm or less are stacked, and a trace addition element (S or Se) is incorporated at a content of from 0.05 at% to 10.0 at% into the GeTe layer (6) on an orientation control layer (4) configured to give, to the Sb2Te3 layer (5) and the GeTe layer (6) at the time of their crystallization, a common crystal axis, the step being performed under a temperature of less than 100°C including room temperature; an Sb2Te3 layer-crystallizing step of crystallizing the Sb2Te3 layer (5) by heating and holding the stacked structural body (7) at a first crystallization temperature of 100°C or more and less than 170°C; and a GeTe layer-crystallizing step of crystallizing the GeTe layer (6) by heating and holding the stacked structural body (7) in which the Sb2Te3 layer (5) is crystallized at a second crystallization temperature of 170°C or more and 400°C or less.

公开(公告)号：EP4098768A1

公开(公告)日：2022-12-07

申请号：EP20873356.8

申请日：2020-12-22

申请人： ULVAC, Inc.

发明人： GIBO, Manabu ,  EHIRA, Hiroshi ,  SAKAMOTO, Junichi

IPC分类号： C23C14/24

摘要： The invention provides an evaporator that is heated by an electron beam in vacuum, evaporates or sublimates a vapor-deposition material, and forms a lithium-containing compound coating on a surface of a substrate in transfer by codeposition. The evaporator includes a hearth liner that includes a cooler; and a plurality of liners that are accommodated in the hearth liner, each of which has the vapor-deposition material thereinside.

公开(公告)号：EP3699946A1

公开(公告)日：2020-08-26

申请号：EP18869340.2

申请日：2018-09-28

申请人： ULVAC, Inc.

发明人： SASAKI Naruyasu ,  HIGASHI Akio ,  TERASAWA Toshihiro

IPC分类号： H01J27/20 ,  C23C14/48 ,  H01J37/08 ,  H01J37/317 ,  H01L21/265 ,  H05H1/24

摘要： There is provided a long-lasting and durable ion source (10) which can generate a large amount of aluminum ions. A cathode electrode (22) arranged in a chamber (21) is heated by energization of a filament (20) to heat a raw-material block (28) which is arranged sideways on the cathode electrode(22) and includes aluminum nitride. The raw-material block (28) reacts with an introduced fluorine-compound gas, so that aluminum fluoride is emitted. A thermoelectron which is emitted from the cathode electrode (22) and is accelerated reciprocally moves between the cathode electrode (22) and a repeller electrode (23), to decompose an aluminum-fluoride gas and generate an aluminum ion. A long-lasting and durable ion source (10) which can generate a large amount of aluminum ions can be obtained.

公开(公告)号：EP2624285B1

公开(公告)日：2020-08-26

申请号：EP11828339.9

申请日：2011-09-15

申请人： ULVAC, Inc.

发明人： MASUDA, Takeshi ,  IDENO, Takuya ,  KAJINUMA, Masahiko ,  ODAJIMA, Nobuhiro ,  UCHIDA, Yohei ,  SUU, Koukou

IPC分类号： H01L21/316 ,  C23C16/52 ,  H01L21/31 ,  C23C16/44

公开(公告)号：EP3683821A1

公开(公告)日：2020-07-22

申请号：EP18856848.9

申请日：2018-08-10

申请人： ULVAC, Inc.

发明人： HIGASHI, Akio ,  SASAKI, Naruyasu ,  TERASAWA, Toshihiro

IPC分类号： H01J27/04 ,  H01J37/08

摘要： Providing a technique for preventing abnormal discharge caused by an insulating film formed as a by-product by reacting an ionized gas with an ion source and generating ions in an ion generation container of an ion source. An ion source includes a vacuum chamber (10A) having a cooling mechanism, an ion generation container (11) provided in the vacuum chamber (10A), for reacting an ionized gas with an ion material so as to generate ions, an extraction electrode (15) provided in the vacuum chamber (10A), for extracting ions generated in the ion generation container (11) and generating an ion beam, and a shielding member (30) provided inside and in the vicinity of an inner wall (10d) of the vacuum chamber (10A), and having a main body (31) made of a conductive metal for blocking deposition of an insulating material on the inner wall (10d) of the vacuum chamber (10A). The main body (31) of the shielding member (30) has a plurality of protruding support portions (32) that is in contact with the inner wall (10d) of the vacuum chamber (10A) for supporting the main body (31) in a manner such that the main body (31) is fitted at a distance from the inner wall (10d) of the vacuum chamber (10A).

公开(公告)号：EP3249701B1

公开(公告)日：2020-07-08

申请号：EP16861100.2

申请日：2016-11-01

申请人： Marubun Corporation ,  Toshiba Kikai Kabushiki Kaisha ,  Riken ,  ULVAC, Inc. ,  Tokyo Ohka Kogyo Co., Ltd.

发明人： KASHIMA Yukio ,  MATSUURA Eriko ,  KOKUBO Mitsunori ,  TASHIRO Takaharu ,  HIRAYAMA Hideki ,  KAMIMURA Ryuichiro ,  OSADA Yamato ,  MORITA Toshiro

IPC分类号： H01L33/10 ,  H01L33/32 ,  H01L33/40

公开(公告)号：EP2485248B1

公开(公告)日：2020-03-18

申请号：EP10820725.9

申请日：2010-10-01

申请人： Sanyo Electric Co., Ltd. ,  ULVAC, Inc.

发明人： KAI, Motohide ,  OSONO, Shuji ,  OKAYAMA, Satohiro ,  OGATA, Hideyuki

IPC分类号： C23C16/44 ,  C23C16/24

公开(公告)号：EP2484804B1

公开(公告)日：2018-12-05

申请号：EP10820724.2

申请日：2010-10-01

申请人： Sanyo Electric Co., Ltd. ,  ULVAC, Inc.

发明人： SHIMA, Masaki ,  WAKAMIYA, Yoshinori ,  OSONO, Shuji ,  OKAYAMA, Satohiro ,  OGATA, Hideyuki

IPC分类号： C23C16/44 ,  C23C16/24 ,  H01L21/205 ,  C23C16/32 ,  C23C16/34 ,  C23C16/48 ,  H01L21/687

CPC分类号： C23C16/44 ,  C23C16/24 ,  C23C16/325 ,  C23C16/345 ,  C23C16/4404 ,  C23C16/481 ,  H01L21/68757

摘要： In a catalytic CVD equipment 100, a holder 300 includes an antireflective structure for preventing reflection of a radiant ray that is ejected from the catalytic wire 11 toward the side of the substrate 200.

公开(公告)号：EP3163641A4

公开(公告)日：2018-02-28

申请号：EP15811571

申请日：2015-06-11

申请人： ULVAC INC

发明人： HIROSE MITSUTAKA ,  KOBAYASHI HIROKI ,  HENMI MITSUNORI ,  TSUKAGOSHI KAZUYA ,  TSUYUKI TATSURO ,  KIMURA ISAMU ,  SUU KOUKOU

IPC分类号： H01L41/319 ,  C23C14/08 ,  C23C14/34 ,  H01L41/047 ,  H01L41/29 ,  H01L41/316

CPC分类号： H01L41/0477 ,  C23C14/08 ,  C23C14/088 ,  C23C14/165 ,  C23C14/34 ,  C23C14/3464 ,  H01L41/0815 ,  H01L41/29 ,  H01L41/316 ,  H01L41/319

摘要： The present invention provides a technology for preventing the generation of a pyrochlore phase, which is an impurity phase, in forming a PZT thin film by sputtering, without using a conventional seed layer. The present invention provides a PZT thin film laminate including: a Si substrate 10; a TiOx layer 4 serving as a platinum-adhesion layer on the Si substrate 10; a Pt electrode layer 5 on the TiOx layer 4; a Ti thin film layer 6 on the Pt electrode layer 5; and a PZT thin film layer 7 on the Ti thin film layer 6. The Ti thin film layer 6 can have a thickness of 1 nm or more and 10 nm or less.

公开(公告)号：EP3159159A4

公开(公告)日：2018-01-17

申请号：EP15810304

申请日：2015-06-11

申请人： ULVAC INC

发明人： KOBAYASHI HIROKI ,  HENMI MITSUNORI ,  HIROSE MITSUTAKA ,  MASHIMA SHINNOSUKE ,  KIMURA ISAO ,  SUU KOUKOU

IPC分类号： B32B15/00 ,  B41J2/14 ,  C23C14/04 ,  C23C14/08 ,  C23C14/18 ,  C23C14/35 ,  C23C14/56 ,  C23C14/58 ,  H01L41/047 ,  H01L41/29 ,  H01L41/316

CPC分类号： H01L41/083 ,  B32B15/00 ,  B41J2/14 ,  C23C14/04 ,  C23C14/088 ,  C23C14/185 ,  C23C14/34 ,  C23C14/35 ,  C23C14/566 ,  C23C14/568 ,  C23C14/588 ,  H01L41/0471 ,  H01L41/0805 ,  H01L41/29 ,  H01L41/297 ,  H01L41/314 ,  H01L41/316

摘要： A multi-layered film includes a first electroconductive layer, a dielectric layer, and a second electroconductive layer, which are sequentially layered and disposed on a main surface of a substrate. A lower surface of the dielectric layer comes into contact with an upper surface of the first electroconductive layer, an upper surface and an side surface of the dielectric layer is coated with the second electroconductive layer, and an side end of a portion at which the first electroconductive layer directly overlaps the second electroconductive layer is located inside a side end of the substrate on the main surface of the substrate.