PIEZOELECTRIC THIN FILM DEVICE, INKJET RECORDING HEAD USING THE DEVICE AND MANUFACTURING METHODS OF THE DEVICE AND THE HEAD
    2.
    发明公开
    PIEZOELECTRIC THIN FILM DEVICE, INKJET RECORDING HEAD USING THE DEVICE AND MANUFACTURING METHODS OF THE DEVICE AND THE HEAD 审中-公开
    PIEZOELEKTRISCHESDÜNNSCHICHTELEMENT,TINTENSTRAHLDRUCKKOPF SOWIE HERSTELLUNGSVERFAHREN

    公开(公告)号:EP1089360A4

    公开(公告)日:2002-05-29

    申请号:EP00915356

    申请日:2000-04-05

    摘要: When a piezoelectric thin film device (D), composed of a piezoelectric thin film (1), 1st and 2nd electrode films (2 and 3) formed on both the surfaces in the thickness direction of the piezoelectric thin film (1) and a support film (5) supporting the piezoelectric thin film (1), is manufactured by forming the respective films (1, 2, 3 and 5) on a film forming substrate (11) and then removing the film forming substrate (11) by etching, and even if the support film (5) is made of resin, etc. and an adhesion force between the support film and other films is relatively low, damages to a piezoelectric thin film (1) by an etchant can be securely prevented. For that purpose, the 1st electrode film (2), in contact with the film forming substrate (11), is formed so as to have its whole circumferential edge protrude sidewise beyond the side surface of the piezoelectric thin film (1) for tight adhering to the support film (5).

    摘要翻译: 通过形成每个膜1,2制造压电薄膜元件D,其中分别在其厚度方向的相对表面上形成有第一和第二电极膜2和3的压电薄膜1由保持膜5保持 ,3和5在成膜基板11上,并通过蚀刻去除成膜基板11。 即使当保持膜5由诸如树脂的材料制成并且因此相对于其它膜显示相对较差的粘附性时,由于与膜接触的第一电极膜2,保护了压电薄膜1免受蚀刻剂的损伤 形成基板11形成为使得第一电极膜2的周边部分的整个周边横向延伸超过压电薄膜1的侧表面并且紧密地附着到保持膜5。

    THIN-FILM PIEZOELECTRIC ELEMENT
    4.
    发明公开
    THIN-FILM PIEZOELECTRIC ELEMENT 审中-公开
    压电性薄膜元件

    公开(公告)号:EP1311006A4

    公开(公告)日:2007-07-25

    申请号:EP01953307

    申请日:2001-07-23

    摘要: To provide a piezoelectric thin film having an improved and stable characteristic by controlling stress applied during forming a piezoelectric thin film and providing the piezoelectric thin film having a perovskite structure. A thin film piezoelectric element in which a lower electrode is formed on a substrate, a piezoelectric thin film containing lead is formed on the lower electrode, and an upper electrode is further placed on the piezoelectric thin film, characterized in that the piezoelectric thin film is a dielectric with the perovskite structure having lead, zirconium, and titanium as the main ingredients, and is in a composition region in which, in the composition of the whole piezoelectric thin film, the Zr/(Zr + Ti) ratio is not less than 0.53, and has a crystal structure of the tetragonal system in which a c axis is longer than an a axis.