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公开(公告)号：EP0595361B1
公开(公告)日：1999-03-10
申请号：EP93117627.5
申请日：1993-10-29
CPC分类号： G03F7/0045 , G03F7/40
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公开(公告)号：EP0595361A3
公开(公告)日：1997-04-02
申请号：EP93117627.5
申请日：1993-10-29
CPC分类号： G03F7/0045 , G03F7/40
摘要： The surface of a semiconductor substrate is coated with a chemical amplification resist composed of a radiosensitive material containing, as its main component, a polymer or monomolecular compound in which at least a part of phenol hydroxyl groups are substituted by protecting groups that are easily eliminated by the action of an acid. Next, said chemical amplification resist is exposed to light or irradiated with a radioactive ray and then developed, thereby forming a resist pattern. Next, the entire surface of said resist pattern is irradiated with a radioactive ray, while maintaining the temperature of the semiconductor substrate in the range not higher than the glass transition point of said chemical amplification resist, so as to eliminate the protecting groups contained in said chemical amplification resist, thereby improving the heat resistance of said resist pattern.
摘要翻译： 半导体衬底的表面涂覆有由放射敏感材料构成的化学放大抗蚀剂，其包含作为其主要成分的聚合物或单分子化合物，其中至少部分酚羟基被保护基团取代，所述基团易于被 酸的作用。 接下来，将所述化学增幅抗蚀剂曝光或用放射线照射，然后显影，从而形成抗蚀剂图案。 接下来，在将半导体衬底的温度保持在不高于所述化学放大抗蚀剂的玻璃化转变点的范围内的状态下，用放射线照射所述抗蚀剂图案的整个表面，以消除所述抗蚀图案中包含的保护基 化学放大抗蚀剂，从而提高所述抗蚀剂图案的耐热性。
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3.发明公开
公开(公告)号：EP0595361A2
公开(公告)日：1994-05-04
申请号：EP93117627.5
申请日：1993-10-29
CPC分类号： G03F7/0045 , G03F7/40
摘要： The surface of a semiconductor substrate is coated with a chemical amplification resist composed of a radiosensitive material containing, as its main component, a polymer or monomolecular compound in which at least a part of phenol hydroxyl groups are substituted by protecting groups that are easily eliminated by the action of an acid. Next, said chemical amplification resist is exposed to light or irradiated with a radioactive ray and then developed, thereby forming a resist pattern. Next, the entire surface of said resist pattern is irradiated with a radioactive ray, while maintaining the temperature of the semiconductor substrate in the range not higher than the glass transition point of said chemical amplification resist, so as to eliminate the protecting groups contained in said chemical amplification resist, thereby improving the heat resistance of said resist pattern.
摘要翻译： 半导体衬底的表面涂覆有由放射敏感材料构成的化学放大抗蚀剂，其包含作为其主要成分的聚合物或单分子化合物，其中至少部分酚羟基被保护基团取代，所述基团易于被 酸的作用。 接下来，将所述化学增幅抗蚀剂曝光或用放射线照射，然后显影，从而形成抗蚀剂图案。 接下来，在将半导体衬底的温度保持在不高于所述化学放大抗蚀剂的玻璃化转变点的范围内的状态下，用放射线照射所述抗蚀剂图案的整个表面，以消除所述抗蚀图案中包含的保护基 化学放大抗蚀剂，从而提高所述抗蚀剂图案的耐热性。
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公开(公告)号：EP0440375B1
公开(公告)日：1994-07-13
申请号：EP91300563.3
申请日：1991-01-24
IPC分类号： C07C317/28 , C07C317/30
CPC分类号： G03F7/039
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公开(公告)号：EP0440375A1
公开(公告)日：1991-08-07
申请号：EP91300563.3
申请日：1991-01-24
IPC分类号： C07C317/28 , C07C317/30
CPC分类号： G03F7/039
摘要： A diazodisulfone of the formula:
wherein R¹ is a C₃₋₈ branched or cyclic alkyl group, and R² is a C₁₋₈ straight-chain, branched or cyclic alkyl group, is effective as a photoacid generator when used in a photoresist material for light of 300 nm or less.摘要翻译： 具有下式的重氮二砜：
其中R 1为C 3-8支链或环状烷基，R 2为C 1-8直链，支链或环状烷基，作为光酸 发生器用于300nm或更小的光的光致抗蚀剂材料中。 -
公开(公告)号：EP0875787B1
公开(公告)日：2005-12-14
申请号：EP98107461.0
申请日：1998-04-23
发明人： Fujie, Hirotoshi , Souki, Tohru , Uehara, Yukiko
IPC分类号： G03F7/004
CPC分类号： G03F7/0045 , G03F7/038 , G03F7/039 , Y10S430/106
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公开(公告)号：EP0789279A1
公开(公告)日：1997-08-13
申请号：EP96309141.8
申请日：1996-12-13
发明人： Urano, Fumiyoshi , Fujie, Hirotoshi , Oono, Keiji
IPC分类号： G03F7/039 , G03F7/004 , C08F212/14 , C08F12/14 , C08F112/14
CPC分类号： G03F7/039 , C08F212/14 , G03F7/0045 , Y10S430/106
摘要： A polymer of polyhydroxystyrene derivative containing an acetal or ketal group which can easily be eliminated in the presence of an acid in the molecule and having a very narrow molecular weight distribution gives a resist material suitable for forming ultrafine patterns excellent in resolution, heat resistance, mask linearity, and other properties without causing problems of delay time and the like.
摘要翻译： 含有缩醛或缩酮基团的聚羟基苯乙烯衍生物的聚合物，其可以在分子中存在酸并且分子量分布非常窄的情况下容易地除去，得到适合于形成分辨率，耐热性，掩模 线性等特性而不引起延迟时间等的问题。
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公开(公告)号：EP0789279B2
公开(公告)日：2004-12-08
申请号：EP96309141.8
申请日：1996-12-13
发明人： Urano, Fumiyoshi , Fujie, Hirotoshi , Oono, Keiji
IPC分类号： G03F7/039 , G03F7/004 , C08F212/14 , C08F12/14 , C08F112/14
CPC分类号： G03F7/039 , C08F212/14 , G03F7/0045 , Y10S430/106
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公开(公告)号：EP1024406A1
公开(公告)日：2000-08-02
申请号：EP00300581.6
申请日：2000-01-26
CPC分类号： G03F7/0045 , G03F7/039 , Y10S430/106
摘要： A resist composition comprising (a) at least two kinds of polymers which become alkali-soluble by the action of an acid, (b) as a photoacid generator, a combination of an alkylsulfonyl diazomethane compound and a triarylsulfonium arylsulfonate compound or a diaryliodonium arylsulfonate compound, and (c) a solvent is excellent as a chemically amplified resist composition to give excellent pattern shape and very fine line-and-space, particularly when exposed to lights having a wavelength of 300 nm or less.
摘要翻译： （a）至少两种通过酸的作用变成碱溶性的聚合物，（b）作为光酸产生剂，烷基磺酰基重氮甲烷化合物和三芳基锍芳基磺酸盐化合物或芳基磺酸二芳基碘盐化合物的组合 （c）作为化学放大型抗蚀剂组合物，作为具有优异的图案形状和非常微细的线条间隙的溶剂，特别是在曝光于300nm以下的光的情况下是优异的。
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公开(公告)号：EP0476865A1
公开(公告)日：1992-03-25
申请号：EP91307908.3
申请日：1991-08-29
CPC分类号： C07C317/28 , C07C317/24 , C07C2601/14 , G03F7/039 , G03F7/0758
摘要： A resist material of chemical amplified type comprising (a) a polymer such as a polymer of 1-methylcycloalkyl 4-ethenylphenoxyacetate and 4-hydroxystyrene, etc., (b) a photo-sensitive compound capable of generating an acid when exposed to light, and (c) a solvent for dissolving both the components (a) and (b) is excellent in heat resistance and adhesiveness to substrates, capable of maintaining stable pattern dimension from exposure to light to heat treatment, and capable of forming patterns using deep ultraviolet light, KrF excimer laser light, etc.
摘要翻译： 化学的抗蚀剂材料放大型，其包含（a）聚合物：例如1- methylcycloalkyl的聚合物4- ethenylphenoxyacetate和4-羟基苯乙烯等，（b）能够在酸产生的光敏化合物当暴露于光时， 和（c）用于溶解的溶剂两种组分（a）和（b）具有优异的耐热性和密合性的底物，能够从曝光维持稳定的图案尺寸的光进行热处理，以及能够使用深紫形成图案的 光，KrF准分子激光等
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