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公开(公告)号：EP0595361B1
公开(公告)日：1999-03-10
申请号：EP93117627.5
申请日：1993-10-29
CPC分类号： G03F7/0045 , G03F7/40
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公开(公告)号：EP0704762A1
公开(公告)日：1996-04-03
申请号：EP95301947.8
申请日：1995-03-23
发明人： Fumiyoshi, Urano, c/o Tokyo Kenkyusho , Takaaki, Negishi, c/o Tokyo Kenkyusho , Katsuyama, Akiko , Endo, Masayuki
IPC分类号： G03F7/004
CPC分类号： G03F7/0045 , Y10S430/11
摘要： A resist material comprising (a) a terpolymer, (b) a photoacid generator, and (c) a solvent has high light sensitivity, heat resistance, adhesiveness, resolution, etc., and is suitable for forming a pattern of rectangular shape.
摘要翻译： 抗蚀剂材料包括（a）三元共聚物，（b）光致酸发生剂和（c）溶剂，具有高的光敏性，耐热性，粘合性，分辨率等，并且适于形成矩形图案。
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公开(公告)号：EP0323050B1
公开(公告)日：1994-11-02
申请号：EP88311462.1
申请日：1988-12-02
发明人： Ogawa, Kazufumi , Ohno, Keiji , Endo, Masayuki , Nagoya, Mamoru
IPC分类号： G03F7/004
CPC分类号： C07C309/52 , C07C309/76 , C07C309/88 , C07C311/16 , G03F7/0045
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公开(公告)号：EP0319325A3
公开(公告)日：1990-12-27
申请号：EP88311463.9
申请日：1988-12-02
IPC分类号： G03F7/10
CPC分类号： C07D295/26 , C07C245/14 , C07C309/88 , G03F7/0163
摘要： A photosensitive composition comprising a resin such as an alkali-soluble resin and a photosensitive compound such as a novel 3-diazo-2,4-dione derivative, a novel Meldrum's acid derivative, or the like is effective for forming a fine pattern using deep UV light of less than about 300 nm.
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公开(公告)号：EP0323050A3
公开(公告)日：1990-12-19
申请号：EP88311462.1
申请日：1988-12-02
发明人： Ogawa, Kazufumi , Ohno, Keiji , Endo, Masayuki , Nagoya, Mamoru
IPC分类号： G03F7/004
CPC分类号： C07C309/52 , C07C309/76 , C07C309/88 , C07C311/16 , G03F7/0045
摘要： Photosensitive compounds having preferably a functional group such as -SO 2 Cl, -S0 3 H, -SO 3 R,
(R, R', R" being alkyl) on a terminal benzene or naphthalene ring connected via a methylene group and
moiety are improved in sensitivity to light and thermal stability, and thus useful in a photo resist.-
公开(公告)号：EP0595361A3
公开(公告)日：1997-04-02
申请号：EP93117627.5
申请日：1993-10-29
CPC分类号： G03F7/0045 , G03F7/40
摘要： The surface of a semiconductor substrate is coated with a chemical amplification resist composed of a radiosensitive material containing, as its main component, a polymer or monomolecular compound in which at least a part of phenol hydroxyl groups are substituted by protecting groups that are easily eliminated by the action of an acid. Next, said chemical amplification resist is exposed to light or irradiated with a radioactive ray and then developed, thereby forming a resist pattern. Next, the entire surface of said resist pattern is irradiated with a radioactive ray, while maintaining the temperature of the semiconductor substrate in the range not higher than the glass transition point of said chemical amplification resist, so as to eliminate the protecting groups contained in said chemical amplification resist, thereby improving the heat resistance of said resist pattern.
摘要翻译： 半导体衬底的表面涂覆有由放射敏感材料构成的化学放大抗蚀剂，其包含作为其主要成分的聚合物或单分子化合物，其中至少部分酚羟基被保护基团取代，所述基团易于被 酸的作用。 接下来，将所述化学增幅抗蚀剂曝光或用放射线照射，然后显影，从而形成抗蚀剂图案。 接下来，在将半导体衬底的温度保持在不高于所述化学放大抗蚀剂的玻璃化转变点的范围内的状态下，用放射线照射所述抗蚀剂图案的整个表面，以消除所述抗蚀图案中包含的保护基 化学放大抗蚀剂，从而提高所述抗蚀剂图案的耐热性。
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公开(公告)号：EP0636941B1
公开(公告)日：1996-03-20
申请号：EP94305124.3
申请日：1994-07-13
发明人： Urano, Fumiyoshi, c/o Tokyo Kenkyusho , Oono, Keiji, c/o Tokyo Kenkyusho , Matsuda, Hiroshi, c/o Tokyo Kenkyusho , Endo, Masayuki , Kobayashi, Satoshi
IPC分类号： G03F7/09 , C07C309/75
CPC分类号： C07C309/75 , G03F7/091
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8.发明公开
公开(公告)号：EP0595361A2
公开(公告)日：1994-05-04
申请号：EP93117627.5
申请日：1993-10-29
CPC分类号： G03F7/0045 , G03F7/40
摘要： The surface of a semiconductor substrate is coated with a chemical amplification resist composed of a radiosensitive material containing, as its main component, a polymer or monomolecular compound in which at least a part of phenol hydroxyl groups are substituted by protecting groups that are easily eliminated by the action of an acid. Next, said chemical amplification resist is exposed to light or irradiated with a radioactive ray and then developed, thereby forming a resist pattern. Next, the entire surface of said resist pattern is irradiated with a radioactive ray, while maintaining the temperature of the semiconductor substrate in the range not higher than the glass transition point of said chemical amplification resist, so as to eliminate the protecting groups contained in said chemical amplification resist, thereby improving the heat resistance of said resist pattern.
摘要翻译： 半导体衬底的表面涂覆有由放射敏感材料构成的化学放大抗蚀剂，其包含作为其主要成分的聚合物或单分子化合物，其中至少部分酚羟基被保护基团取代，所述基团易于被 酸的作用。 接下来，将所述化学增幅抗蚀剂曝光或用放射线照射，然后显影，从而形成抗蚀剂图案。 接下来，在将半导体衬底的温度保持在不高于所述化学放大抗蚀剂的玻璃化转变点的范围内的状态下，用放射线照射所述抗蚀剂图案的整个表面，以消除所述抗蚀图案中包含的保护基 化学放大抗蚀剂，从而提高所述抗蚀剂图案的耐热性。
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公开(公告)号：EP0636941A1
公开(公告)日：1995-02-01
申请号：EP94305124.3
申请日：1994-07-13
发明人： Urano, Fumiyoshi, c/o Tokyo Kenkyusho , Oono, Keiji, c/o Tokyo Kenkyusho , Matsuda, Hiroshi, c/o Tokyo Kenkyusho , Endo, Masayuki , Kobayashi, Satoshi
IPC分类号： G03F7/09 , C07C309/75
CPC分类号： C07C309/75 , G03F7/091
摘要： A deep ultraviolet absorbent comprising at least one compound having one or more glycidyl groups in the molecule and at least one anthracene derivative, and a solvent capable of dissolving these compounds is effective for preventing reflection of deep ultraviolet light from a substrate during formation of resist pattern, resulting in forming ultra-fine patterns without causing notching and halation.
摘要翻译： 深紫外线吸收剂，其包含具有一个或在分子中多个缩水甘油基和至少一个蒽衍生物，以及一种能够溶解合成的化合物是有效的形成抗蚀剂图案的过程中从底物预防深紫外光的反射溶剂的至少一种化合物 ，从而形成超精细的图案，而不会引起切口和光晕。
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公开(公告)号：EP0323050A2
公开(公告)日：1989-07-05
申请号：EP88311462.1
申请日：1988-12-02
发明人： Ogawa, Kazufumi , Ohno, Keiji , Endo, Masayuki , Nagoya, Mamoru
IPC分类号： G03F7/004
CPC分类号： C07C309/52 , C07C309/76 , C07C309/88 , C07C311/16 , G03F7/0045
摘要： Photosensitive compounds having preferably a functional group such as -SO 2 Cl, -S0 3 H, -SO 3 R,
(R, R', R" being alkyl) on a terminal benzene or naphthalene ring connected via a methylene group and
moiety are improved in sensitivity to light and thermal stability, and thus useful in a photo resist.摘要翻译： 在通过亚甲基和部分连接的末端苯或萘环上优选具有诸如-SO 2 Cl，-SO 3 H，-SO 3 R，（R，R'，R“为烷基）的官能团的光敏化合物在光敏感性方面得到改进， 热稳定性，因此可用于光致抗蚀剂。
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