公开(公告)号：EP2669937A4

公开(公告)日：2016-07-27

申请号：EP12739744

申请日：2012-01-16

申请人： MITSUBISHI MATERIALS CORP

发明人： HATTA TAKESHI ,  MASUDA AKIHIRO

IPC分类号： H01L21/60 ,  C25D5/10 ,  C25D5/50 ,  C25D7/00 ,  C25D7/12 ,  H01L21/48

CPC分类号： H01L24/11 ,  C22C13/00 ,  C25D5/022 ,  C25D5/10 ,  C25D5/505 ,  C25D7/123 ,  H01L21/4853 ,  H01L23/49816 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0401 ,  H01L2224/05023 ,  H01L2224/05147 ,  H01L2224/05568 ,  H01L2224/05655 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13023 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13111 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01047 ,  H05K3/3473 ,  H05K3/4007 ,  H05K2203/043 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

摘要： Provided is a method for manufacturing an Sn alloy bump, wherein composition of the Sn alloy bump can be readily controlled. The method for manufacturing an Sn alloy bump formed of an alloy composed of Sn and other one or more types of metals has a step of forming an Sn layer (4a) on an electrode pad (3) in a resist opening (2a) formed on a substrate (1) by electrolytic plating; a step of laminating Sn and an alloy layer (4b) on the Sn layer (4a) by electrolytic plating; and a step of forming an Sn alloy bump (5) by melting the Sn layer (4a) and the laminated alloy layer (4b) after removal of a resist (2).